Phosphor, Method for Producing a Phosphor and Use of a Phosphor

ABSTRACT

A phosphor is disclosed. In an embodiment a phosphor includes an inorganic substance which includes, in its composition, at least an element D, an element Al, an element AX, an element SX and an element NX where D includes one, two or more elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb, Al includes one, two or more elements selected from the group consisting of divalent metals not included in D, SX includes one, two or more elements selected from the group consisting of tetravalent metals, AX includes one, two or more elements selected from the group consisting of trivalent metals, and NX includes one, two or more elements selected from the group consisting of O, N, S, C, Cl, and F, wherein the inorganic substance has the same crystal structure as Sr(Sr a Ca 1−a )Si 2 Al 2 N 61 .

This patent application is a divisional of U.S. patent application Ser.No. 15/094,702, filed on Apr. 8, 2016, which is a continuation ofPCT/EP2014/071544, filed Oct. 8, 2014, which claims priority to Germanpatent application 102013220315.2, filed Oct. 8, 2013, to German patentapplication 102013222144.4, filed Oct. 30, 2013, to German patentapplication 102014102853.8, filed Mar. 4, 2014, to German patentapplication 102014105589.6, filed Apr. 17, 2014, to German patentapplication 102014107984.1, filed Jun. 5, 2014, to German patentapplication 102014108759.3, filed Jun. 23, 2014, and to German patentapplication 102014110058.1, filed Jul. 17, 2014, each of which isincorporated herein by reference in its entirety.

TECHNICAL FIELD

A phosphor is specified. Additionally specified are a process forproducing such a phosphor and a use of such a phosphor. A phosphorsuitable for use in semiconductor components such as LEDs or laserdiodes is specified in EP 2 135 920 and EP 1 696 016.

SUMMARY

Embodiments of the invention provide a phosphor which has comparativelynarrow-band spectral emission in the red spectral region.

Embodiments of the invention include an inorganic substance whichincludes, in its composition, at least the element D, the element Al,the element AX, the element SX and the element NX (where D is one, twoor more elements from the group of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho,Er, Tm, alkali metals (Li, Na, K, Rb, Cs) and Yb. Al is one, two or moreelements from the group of the divalent metals not included in D, SX isone, two or more elements from the group of the tetravalent metals, AXis one, two or more elements from the group of the trivalent metals, andNX is one, two or more elements from the group of O, N, S, C, Cl, F) andhas the same crystal structure as Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆.

The inventors have found that such a phosphor has a whole series ofadvantages over conventional phosphors, as described further down.

A phosphor having the same crystal structure asSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆ is defined hereinafter as a phosphor which,as well as the P2₁ space group, can additionally also be described inone of space groups 1 to 3 according to the International TablesCrystallography A, i.e. in the following space groups: P1, P2, P1, andwherein the length of the chemical bonds between the elements Al—N andSi—N calculated from the lattice constants and atomic coordinatesaccording to a Rietveld analysis is within a value of ±15% of the valuesdescribed in FIG. 22.

In a further embodiment of the present invention, the space group ismonoclinic P2₁.

In a further embodiment of the present invention, the inorganicsubstance can be described by the following general formula:

(D_(a)Al_(b))(D_(c)Al_(d))SX_(e)AX_(f)NX_(g)

where a+b≦1 and c+d≦1 and where the parameters a, b, c, d, e, f and gfulfill the following conditions:

0≦a≦0.5; 0≦c≦0.5; 0≦b≦1; 0≦d≦1; a+c>0; b+d≦2; 0.1≦e≦8; 0.1≦f≦16;0.8(f+4/3 e+2/3(b+d))≦g; and g≦1.2(f+4/3 e+2/3(b+d)).

Preferably, the following conditions apply: 0≦a≦0.1; 0≦c≦0.1; 0≦b≦1;0≦d≦1; a+c>0; b+d<2; 0.1≦e≦8; 0.1≦f≦16; 0.8(f+4/3 e+2/3(b+d))≦g; andg≦1.2(f+4/3 e+2/3(b+d)).

In a further embodiment, the phosphor has a general empirical formulaAl(Al_(a)M_(1−a))SX₂AX₂NX₆:D. In this formula, Al is at least onedivalent metallic element, for example Sr, M is another divalentmetallic element, for example Ca, SX contains at least one tetravalentelement, for example Si and/or C, AX contains at least one trivalentelement, for example Al and/or La, and NX contains at least one elementselected from the group of N, O, F, Cl.

In addition, the general elements Al, M, SX, AX and NX in this empiricalformula may be defined as already described above, i.e. D as one, two ormore elements from the group of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er,alkali metals (Li, Na, K, Rb, Cs), particularly Li, Tm and Yb, Al asone, two or more elements from the group of the divalent metals notincluded in D, SX as one, two or more elements from the group of thetetravalent metals, e.g. Si, C, Ge, Hf, Zr, Ti, AX as one, two or moreelements from the group of the trivalent metals, e.g. Al, La, Ga, In, B,and NX as one, two or more elements from the group of O, N, S, C, Cl, F.

The parameter value a may be between 0.6 and 1.0, or between 0.8 and1.0. In addition, it may be the case that a<1.

The present invention further provides, in a further embodiment, aphosphor of the general formula:

Sr(Sr_(a)M_(1−a))Si₂Al₂(N,X)₆:D,A,B,E,G,L

where the phosphors of the invention are co-doped with the elements A,B, E, G and L and these co-dopants can occupy either positions in thehost lattice or interstitial lattice sites. The general element Xrepresents elements such as O or halogen, for example, which especiallyalso serve to balance charge carriers if occupied interstitial latticesites are present in the crystal lattice or voids are present at latticesites.

The metal M here is selected from Ca, Ba, Mg alone or in combination, Ais selected from divalent metals which are different than M and than thefurther dopant D used, for example Cu, Zn or combinations thereof, Brepresents trivalent metals, especially transition or rare earth metals,e.g. La or Pr, and E represents monovalent metals, e.g. Li or otheralkali metals such as Cs, Rb, K or Na. G represents tetravalentelements, for example C or Ge, or Hf, Zr, Ti. The element L hererepresents trivalent elements, for example B, Ga or In.

More particularly, this phosphor may have the following general formula:

Sr(Sr_(a)M_(1−a))Si₂Al₂(N,O)₆:D,A,B,E,G

Hereinafter, rather than the general formulaSr(Sr_(a)M_(1−a))Si₂Al₂(N,O)₆:D,A,B,E,G, the formulaeSr(Sr_(a)M_(1−a))Si₂Al₂(N,O)₆:D and Sr(Sr_(a)M_(1−a))Si₂Al₂(N,O)₆:Eu,Sr(Sr_(a)M_(1−a))Si₂Al₂(N)₆:D and Sr(Sr_(a)M _(1−a))Si₂Al₂(N)₆:Eu areused synonymously for reasons of simplicity.

The dopants may additionally occupy specific positions within thecrystal lattice of the phosphors of the invention, for example latticesites or interstitial lattice sites, and may also replace elementspresent in the phosphors, so as to result, in a further embodiment, in aphosphor of the following general formula:

Sr_((1−x−h))(Sr_(a)M_(1−a))_((1−y−i))A_((x+y))B_((h+i)/2)E_((h+i)/2)Si_((2−z))G_(z)Al_(2−v)L_(v)(N,X)₆:D

More particularly, the general formula may be as follows:

Sr_((1−x−h))(Sr_(a)M_(1−a))_((1−y−i))A_((x+y))B_((h+i)/2)E_((h+i)/2)Si_((2−z))G_(z)Al₂N₆:D

where the metal M and the elements A, B and E are the elements justdescribed above, and where 0≦x+y≦0.4, preferably 0≦x+y≦0.3, furtherpreferably 0.04≦x+y≦0.3, x+y may especially be 0.2 or 0.04, and also0≦h+i≦0.4, preferably 0≦h+i≦0.3, further preferably 0.04≦h+i≦0.3, whereit is also possible for no B to be present, such that x=0 and y=0. Theparameters h+i may especially be 0.2 or 0.04, where it is also possiblefor no B and E to be present, such that h=0 and i=0. In this case, thedivalent metals A and/or a combination of equal molar proportions of thetrivalent and monovalent metals B and E may replace Sr and/or Ca. Theparameters x+y, h+i and z may be selected independently of one another.In addition, it is also possible for each of x and y and h and iindependently to be 0.

G represents tetravalent elements, for example C or Ge, which replaceSi, where the parameter z is as follows: 0≦z≦1, or 0≦z≦0.5, or0.02≦z≦0.3, where z may especially be 0.02 or 0.4, or no tetravalentelement may be present, such that z=0. The parameter v for the element Lmay assume the following values: 0≦v≦1, and also 0≦v≦0.5.

Replacement of Sr and M by A and/or replacement of Sr and M by acombination of B and E can lead to a change in the color locus in theCIE color space, to a change in the dominant wavelength, in thereflection capacity, in the luminous efficiency LER, in the thermalquenching characteristics, in the stability to radiation, in thehydrolysis sensitivity and/or in the FWHM of the phosphor of theinvention, and hence open up further ways of adapting the phosphors ofthe invention for specific applications.

Replacement of Si by G can additionally lead to a significant shift inthe wavelength of emission of the phosphor and can thus bring about animprovement in the color rendering index, particularly in the case ofrendering of deep red colors. Co-doping with carbon, for example, thusincreases the options for achieving particular color loci.

In addition, it is possible that the tetravalent element G, e.g. C, alsopartly replaces the nitrogen atoms in the phosphors of the invention, inwhich case G is present as G⁴⁻, so as to result in the following generalstructural formula:

Sr(Sr_(a)M_(1−a))Si₂G_(3z)Al₂(N,X)_(6−4z):D or

Sr(Sr_(a)M_(1−a))Si₂G_(3z)Al₂N_(6−4z):D.

In a further embodiment of the phosphor, it is possible that each ofx+y, h+i and/or z=0, in which case the following general formula is theresult:

Sr(Sr_(a)M_(1−a))Si_((2−z))G_(z)Al₂(N,X)₆:D or

Sr(Sr_(a)M_(1−a))Si(_(2−z))G_(z)Al₂N₆:D

when x+y=0 (x=0 and y=0) and additionally h+i=0 (h=0 and i=0),

or the general formula:

Sr_((1−h))(Sr_(a)M_(1−a))_((1−i))B_((h+i)/2)E_((h+i)/2)Si₂Al₂(N,X)₆:D or

Sr_((1−h))(Sr_(a)M_(1−a))_((1−i))B_((h+i)/2)E_((h+i)/2)Si₂Al₂N₆:D

is the result when z=0 and x+y=0 (x=0 and y=0).

In addition, it is possible for exclusively divalent elements A toreplace Sr and M i.e. for no B or E or G to be present, so as to resultin the following general formulae:

Sr_((1−x))(Sr_(a)M_(1−a))_((1−y))A_((x+y))Si₂Al₂(N,X)₆:D or

Sr_((1−x))(Sr_(a)M_(1−a))_((1−y))A_((x+y))Si₂Al₂N₆:D

In addition, M in the above formulae may preferably be Ca.

A further embodiment of a phosphor of the invention has the followinggeneral formula:

Sr_((1−x))(Sr_(a)M_(1−a))_((1−y))B_((x+y))Si_(2−(x+y))Al_(2+(x+y))N₆:Dor

Sr_((1−x))(Sr_(a)M_(1−a))_((1−y))B_((x+y))Si_(2−(x+y))Al_(2+(x+y))N₆:D,

such that Sr and M, and Si are replaced by a combination of thetrivalent metals B and Al, where the following applies here too:0≦x+y≦0.4, preferably 0.04≦x+y≦0.3; x+y may especially be 0.2.

All the above mentioned phosphors have strong absorption in the bluespectral region and emit red secondary radiation. In addition, thesephosphors have the same crystal structure as Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆,and so crystallize in the space groups P1, P2, P1, especially in themonoclinic P2₁ space group.

A further embodiment of the present invention also provides phosphors ofthe general formula already described above:

Sr_((1−x−h))(Sr_(a)M_(1−a))_((1−y−i))A_((x+y))B_((h+i)/2)E_((h+i)/2)Si_((2−z))G_(z)Al₂N₆:Dor

Sr_((1−x))(Sr_(a)M_(1−a))_((1−y))B_((x+y))Si_(2−(x+y))Al_(2+(x+y))N₆:D

where D is one, two or more elements from the group of Mn, Ce, Pr, Nd,Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals, i.e. Li, Na, K, Rb, Cs,preferably Li and Yb. D is preferably selected from Eu, Ce, Li, Mn andcombinations thereof. Preferably, the activator D is selected from atleast one element from Eu, Ce, Mn, especially Eu, Ce or Mn, or a mixtureof Eu, Ce, Li. By using the latter activators, it is possible withparticular efficiency to adjust the color locus of the phosphor in theCIE color space, its dominant wavelength λdom, the luminous efficiencyLER, FWHM, and the diffuse reflectance at 450-470 nm.

Another particular possibility is co-doping of Eu-doped phosphors of theinvention with alkali metals, i.e. Li, Na, K, Rb, Cs, preferably Li.Co-doping with the alkali metals may especially lead to a decrease inthe spectral half-height width FWHM, and result in improvedcharacteristics with regard to thermal quenching, and an improvement inthe luminous efficiency.

In a further embodiment of the present invention, the activator D is acombination of Eu and one or more alkali metals, preferably Li. This canlead to a further reduction in the FWHM of the radiation emitted, animprovement in the thermal quenching characteristics and the quantumefficiency.

A general formula of this phosphor having a combination of Eu and Li canbe described as follows:

Sr_((1−x−h))(Sr_(a)M_(1−a))_((1−y−i))A_((x+y))B_((h+i)/2)E_((h+i)/2)Si_((2−z))G_(z)Al₂N₆:Eu,Lior

Sr_((1−x))(Sr_(a)M_(1−a))_((1−y))B_((x+y))Si_(2−(x+y))Al_(2+(x+y))N₆:Eu,Li

In this case, it is possible that the lithium metal ions occupypositions in the host lattice and/or are present at intermediate latticesites. Balancing of charge carriers is possible by adjusting the Si:Alratio and/or by partly replacing N with O and/or halogens such as F.Also possible are randomly distributed voids within the cation latticesites. For this reason, the following general formulae are also suitablefor description of phosphors of the invention having Eu and Li asactivators, without showing the additional elements A, B, E and G forreasons of clarity, but these may fundamentally be present:

Li_(j)Sr(Sr_(a)M_(1−a))Si_((2−j))Al_((2+j))N₆:Eu

Sr(Sr_(a)M_(1−a))Li_(j)Si_((2−j))Al_((2+j))N₆:EU

Li_(2j+2k+2l)Sr_(1−j)(Sr_(a−k)M_(1−a−1))Si₂Al₂N₆:Eu

Li_(j)Sr_(1−k)(Sr_(a)M_(1−a))_(1−l)Si_(2+m)Al_(2−n)N₆:Eu

Li_(j)[Sr(Sr_(a)M_(1−a))]_(1−j)Si_(2+j)Al_(2−j)N₆:Eu

The following applies to the parameter j: 0≦j≦0.2, preferably 0≦j≦0.15,further preferably 0≦j≦0.05.

In a further embodiment, the phosphor has a general empirical formulaSr(Sr_(a)M_(1−a))Si₂Al₂N₆:D. In this formula, M is Ca and/or Ba. Inaddition, M may also be selected from the group of Ca, Ba, Zn, Mg and/orLi, alone or in combination. In these cases and the above-describedgeneral formulae, the value of a may be 0.6 to 1.0, preferably 0.8 to1.0 (excluding the boundary values). More particularly, a is chosen at0.7 to 0.99, further preferably at 0.85 to 0.99, including the boundaryvalues.

The activator D may, in a further embodiment of the invention, bepresent in molar percentages between 0.1% and 20 mol %, or 0.1% and 10%,or 1 mol %-10 mol %, or 0.5% to 5%, 2-5 mol %, or 0.8% to 3%. Here andhereinafter, percentage figures for the activator, especially Eu, areunderstood as molar percentages based on the molar proportions of thealkaline earth metals in the particular phosphor.

The activator D may preferably be selected from the metals Eu, Ce, Mnand Li and combinations thereof. In addition, the activator D may be Eu,Mn or Ce, and combinations of Eu, Ce and Li.

With the rising concentration of europium dopant, the dominantwavelength of the emission of the phosphors of the invention moves tohigher wavelengths from the orange to the red color region (see FIG. 58a), with a rise in the relative intensity of photoluminescence of 0.1 toabout 4 mol % and then a drop again as the activator concentrations ofeuropium continue to rise (see FIG. 58b ). Based on the relativeintensity of the photoluminescence, a concentration range of 1-10 mol %Eu, or 2-5 mol %, is preferred. Behavior substantially analogous to therelative intensity of photoluminescence is also displayed by therelative photoluminescence intensity assessed by eye, which likewiseincreases with rising activator concentrations of europium and dropsagain from about 4 mol % to about 20 mol % (see FIG. 58c ). Based on thephotoluminescence intensity assessed by eye, activator concentrations of0.4-10 mol % of Eu, or 1-5 mol % of europium, are preferred.

In at least one embodiment, the phosphor is set up to emit red or orangelight. Red or orange light means that the phosphor emits radiationhaving a dominant wavelength of at least 560 nm, preferably between 585nm and 640 nm inclusive, especially between 590 nm and 615 nm inclusive.

The dominant wavelength is especially that wavelength which is found tobe the point of intersection of the spectral color line of the CIEstandard chromaticity diagram with a straight line, this straight lineproceeding from the white point in the CIE standard chromaticity diagramand running through the actual color locus of the radiation. In general,the dominant wavelength differs from a wavelength of maximum intensity.More particularly, the dominant wavelength in the red spectral region isat smaller wavelengths than the wavelength of maximum intensity.

In at least one embodiment, the phosphor has a general empirical formulaSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D. In this formula, D is at least oneactivating element. Frequently, D is formed by element Eu and/or elseCe. Other or additional activating elements or dopants may be selectedfrom the group of Mn, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb,and Lu, each alone or in combination. It is possible that the phosphorincludes further elements, for instance in the form of impurities, inwhich case these impurities taken together should preferably have amaximum proportion by weight in the phosphor of not more than 0.1permille or 100 ppm or 10 ppm, parts per million.

In at least one embodiment, the phosphor is set up to emit red light andpreferably to be excited by blue light.

Phosphors which can be excited in the ultraviolet spectral range intothe blue-green spectral range and which emit red light are of greatsignificance for the production of white light-emitting diodes.Specifically in the case of light-emitting diodes having low colortemperatures, called warm white light-emitting diodes, and/or in thecase of light-emitting diodes having a high color rendering index,phosphors of this kind are required. Phosphors of this kind are alsorequired in a multitude of other applications, for instance for displaybacklighting, what are called color-on-demand applications or else fororange and red full conversion light-emitting diodes. Use in combinationwith an organic light-emitting diode, OLED for short, is likewisepossible. The phosphor described here is usable for such applications,and likewise for laser applications such as the LARP method.

In at least one embodiment, the phosphor in a powder diffractogram onirradiation with monochromatic Cu-K_(α1) radiation has a reflection atan angle 2 theta between 36.7° and 37.0°, according to the compositionof the phosphor. The exact position of this reflection depends on thegeneral empirical formula of the phosphor. An intensity of thisreflection, especially based on a main reflection, is preferably atleast 0.3% or 0.5% and/or at most 10% or 8% or 5% or 4%.

In at least one embodiment, the dominant wavelength of the phosphor isat least 596 nm or 598 nm. Alternatively or additionally, the dominantwavelength is at most 610 nm, 606 nm or 604 nm. The wavelength ofmaximum intensity is, for example, at least 605 nm or 610 nm and/or atmost 630 nm or 625 nm.

In at least one embodiment, the phosphor has a spectral half-heightwidth at half the maximum height, FWHM or full-width at half maximum forshort, of at least 70 nm or 75 nm or 78 nm. The maximum of this spectralrange is preferably 90 nm or 87 nm or 84 nm or 82 nm.

In at least one embodiment, the phosphor has an absorption maximum inthe blue spectral region, especially a relative absorption maximum. Theblue spectral region especially refers to wavelengths of at least 400 nmand/or of at most 480 nm. For example, the absorption maximum is at atleast 410 nm or 420 nm and/or at at most 450 nm or 440 nm.

The abovementioned values relating to the spectral properties of thephosphor especially apply at room temperature, i.e. at about 300 K.

Additionally specified is a process for producing such a phosphor.Features of the phosphor are therefore also disclosed for the process,and vice versa.

In at least one embodiment, the process has at least the followingsteps, preferably in the sequence specified:

A) providing reactants in the solid state for Sr, Al, Si and Eu andoptionally for Ca,

B) mixing the reactants,

C) heating the reactants under an inert gas atmosphere, especiallynitrogen atmosphere, or under a forming gas atmosphere, to at least1500° C. and forming a calcined cake, and

D) comminuting the calcined cake to give the phosphor.

In at least one embodiment of the process, at least step C) or else allsteps are effected at about atmospheric pressure. More particularly, theprocess in that case is not effected under high pressure conditions.Preferably, the atmospheric pressure and/or a total pressure is between0.9 bar and 1.5 bar or 0.95 bar and 1.05 bar inclusive.

Reactants and sources used for strontium, aluminum and/or calcium may bethe respective pure metals or else metal alloys with the appropriatemetals. Reactants used may likewise be silicides, hydrides, nitrides,oxynitrides, halides and/or oxides of these metals. In addition, it ispossible to use mixtures of these compounds.

Reactants or sources used for silicon for the production of the phosphormay be a silicon-metal compound, a silicon nitride, an alkaline earthmetal silicide, silicon diimide, or a mixture of these compounds.Preference is given to using silicon nitrides and/or silicon metals.

Reactants or sources used for Eu may be metallic europium, a europiumalloy, a europium oxide, a europium nitride, europium hydride or aeuropium halide. It is likewise possible to use mixtures of thesecompounds. Preference is given to using europium oxide as reactant foreuropium.

Reactants used for the further tetravalent elements G, e.g. C, thetrivalent elements B, e.g. La, the monovalent elements E, e.g. Li, andthe divalent elements A other than D and M, e.g. Cu or Zn, may, forexample, be the corresponding elements, silicides, hydrides, nitrides,oxynitrides, carbonates, hydroxides, halides and/or oxides of theseelements and compounds derived therefrom, for example hydrates. Forexample, it is possible to use Mn₂O₃, CuO, Zn₃N₂, La₂O₃, Li₂B₄O₇ andgraphite.

In at least one embodiment, a melting agent and/or a flux is used forthe improvement of crystallinity and/or to promote crystal growth. Forthis purpose, preferably chlorides, fluorides, halides and/or boroncompounds of the alkaline earth metals used are employed. Combinationsof two or more melting agents or fluxes may also be used. Melting agentsand/or fluxes used are especially, for example, at least one of thefollowing substances: LiF, LiCl, NaF, NaCl, SrCl₂, SrF₂, CaCl₂, CaF₂,BaCl₂, BaF₂, NH₄Cl, NH₄F, KF, KCl, MgF₂, MgCl₂, AlF₃, H₃BO₃, B₂O₃,Li₂B₄O₇, NaBO₂, Na₂B₄O₇, LiBF₄. Also suitable are NH₄HF₂, NaBF₄, KBF₄,EuF₃ and compounds derived therefrom, for example hydrates.

In at least one embodiment, the starting substances, especially for Sr,Ca, Al and/or Si and also Eu, and optionally also for the furthertetravalent elements G, e.g. C, the trivalent elements B, e.g. La, themonovalent elements E, e.g. Li, and the divalent elements A other than Dand M, e.g. Cu or Zn, are weighed out according to the general empiricalformula of the phosphor. It is possible that the alkaline earth metalcomponents Sr, Ca are also weighed out with an excess, in order tocompensate for any evaporation losses that occur during the synthesis.In addition, it is also possible to employ Ba as alkaline earth metalcomponent.

In at least one embodiment, step D) is followed by a step E). In stepE), the phosphor is calcined further, which can also be referred to astempering. The calcination is especially effected at a temperature of atleast 1500° C. and preferably under a nitrogen atmosphere or forming gasatmosphere. Forming gas refers to a mixture of N₂ and H₂. Thetemperature of at least 1500° C. in steps C) and/or E) is preferablyemployed for at least four hours or six hours. For example, in each ofsteps C) and E), a temperature of 1650° C.±50° C. is employed.

In an alternative embodiment of a process of the invention forpreparation of such a phosphor, rather than step E), it is also possibleto repeat steps C) and D).

In at least one embodiment, the reactants are mixed in a ball mill or ina tumbling mixer. In the mixing operation, it may be advantageous tochoose the conditions such that a large amount of energy is introducedinto the mixture, which results in grinding of the reactants. Theresultant increase in homogeneity and reactivity of the mixture can havea positive influence on the properties of the resulting phosphor.

By controlled alteration of the bulk density or by modification of theagglomeration of the reactant mixture, it is possible to reduce theformation of secondary phases. In addition, a particle sizedistribution, a particle morphology and/or a yield of the resultingphosphor can be affected. Techniques of particular suitability for thepurpose are screening and pelletizing operations, including use ofsuitable additives.

In at least one embodiment, a tempering is effected, especially in acrucible made from tungsten, molybdenum or boron nitride. The temperingis preferably effected in a gas-tight oven in a nitrogen atmosphere orin a nitrogen/hydrogen atmosphere. The atmosphere may be flowing orstationary. It is additionally possible for carbon in finely dividedform to be present in the oven space. Also possible are multipletempering steps of the phosphor, in order to improve or to control thecrystallinity or particle size distribution. Further advantages may be alower defect density, associated with improved optical properties of thephosphor and/or a higher stability of the phosphor. Between the heattreatments, the phosphor may be treated in a wide variety of differentways, or it is possible to add substances such as melting agents to thephosphor.

For grinding of the phosphor, it is possible, for instance, to use amill, a fluidized bed mill or a ball mill. In the grinding operation, itis preferable to ensure that the proportion of splintered grainsproduced is kept to a minimum, since these can worsen the opticalproperties of the phosphor.

The phosphor can additionally be washed. For this purpose, the phosphorcan be washed in water or in aqueous acids such as hydrochloric acid,nitric acid, hydrofluoric acid, sulfuric acid, organic acids or amixture of these. The phosphor may alternatively or additionally bewashed in an alkali such as sodium hydroxide solution, potassiumhydroxide solution, an aqueous ammonia solution or mixtures thereof.Alternatively or additionally, washing in organic solvents such asacetone, propanol and/or phenol is possible. The washing preferablyfollows after the grinding.

In at least one embodiment, for instance, the tempering, furthercalcining, grinding, sieving and/or washing result in removal ofsecondary phases, glass phases or other contamination and hence animprovement in the optical properties of the phosphor. It is alsopossible by this treatment to selectively remove or dissolve smallphosphor particles and to influence the particle size distribution forthe application. In addition, such a treatment can alter a surface ofthe phosphor particles in a controlled manner, for example the removalof particular constituents from the particle surface. This treatmentcan, also in conjunction with a downstream treatment, lead to improvedstability of the phosphor. More particularly, the application of aprotective layer is possible, as is basically known per se.

Additionally specified is the use of such a phosphor. Features relatingto use are therefore also disclosed for the process and the phosphor,and vice versa.

In at least one embodiment, the phosphor is used in a light-emittingdiode as radiation source as the first phosphor in a lighting device.The light-emitting diode comprises at least one semiconductor chip thatemits in the blue and/or UV spectral region in operation. The phosphoris arranged downstream of the semiconductor chip along a beam path.

The blue and/or UV light produced by the semiconductor chip is partly orfully absorbed by the phosphor and converted to radiation of greaterwavelength, especially to red (e.g. D=Eu) or orange (e.g. D=Ce) light.It is possible that at least one further second phosphor which has anemission different than the first phosphor and is especially suitablefor generation of green and/or yellow light is present, especially alsophosphors having the same structure as the first phosphor. In addition,the light-emitting diode preferably emits mixed radiation including bluelight from the semiconductor chip and converted radiation from thephosphor, and also green and/or yellow light from the further phosphor.The primary radiation used may also be UV radiation rather than bluelight.

As well as the first phosphor and optionally the second phosphor, it isalso possible for further non-luminous particles, for example scatteringparticles and diffusers, to be present in the beam path of the radiationsource.

In the remarks which follow, the composition of the novel phosphor ofthe invention having the empirical formula Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Euis described. This corresponds to the nominal composition of the samplesaccording to the composition weighed out. However, the Si:Al ratioactually present may also differ from 2:2, which can be expressed by aparameter d. A possible value of d is, for example, between 0 and 0.1,including the boundary values. No distinction of Si and Al by x-raymethods is possible. It is likewise possible that the finished phosphorcontains other, further elements which are introduced, for example, viaimpurities or fluxes in the starting mixture or during the synthesis,especially (but not exclusively) boron and/or carbon and/or oxygenand/or halogens, for example fluorine or chlorine. By virtue of possibleevaporations of individual components, there may also be statisticalunderoccupation of individual positions. This effect too can be detectedonly with difficulty, if at all, by x-ray analysis.

Therefore, in all embodiments, an empirical formula of theSr_(1−e)(Sr_(a)Ca_(1−a))_(1−g)(Si,C)_(2+d)(Al,B)_(2−d)(N,O,F,Cl,C)₆:Eutype is accordingly a possible description of the phosphor actuallypresent.

For reasons of clarity, hereinafter, however, all embodiments will refersimply to “Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu”; in that case, the particularempirical formula specified corresponds to the composition weighed out.

In various embodiment a phosphor includes an inorganic substance whichincludes, in its composition, at least the element D, the element Al,the element AX, the element SX and the element NX (where D is one, twoor more elements from the group of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho,Er, Tm, alkali metals (Li, Na, K, Rb, Cs) and Yb, Al is one, two or moreelements from the group of the divalent metals not included in D, SX isone, two or more elements from the group of the tetravalent metals, AXis one, two or more elements from the group of the trivalent metals, andNX is one, two or more elements from the group of O, N, S, C, Cl, F) andhas the same crystal structure as Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆.

Embodiments provide the phosphor according to the preceding embodiment,wherein the inorganic substance is described by the following generalformula: (D_(a)Al_(b))(D_(c)Al_(d))SX_(e)AX_(f)NX_(g), where a+b≦1 andc+d≦1 and where the parameters a, b, c, d, e, f and g fulfill thefollowing conditions: 0≦a≦0.5; 0≦c≦0.5; 0≦b≦1; 0≦d≦1; a+c>0; b+d<2;0.1≦e≦8; 0.1≦f≦16; 0.8(f+4/3 e+2/3(b+d))≦g; and g≦1.2(f+4/3 e+2/3(b+d)), where a and c can be as follows: 0≦a≦0.1 and 0≦c≦0.1.

In various embodiments a phosphor has the general formula:Sr(Sr_(a)M_(1−a))Si₂Al₂(N,X)₆:D,A,B,E,G,L, where M is selected from Ca,Ba, Mg alone or in combination, A is selected from divalent metalsdifferent than M and D, B=trivalent metals, E=monovalent metals,G=tetravalent elements and L=trivalent elements.

Embodiments provide the phosphor according to any of the precedingembodiments, having the general formula Al(Al_(a)M_(1−a))SX₂AX₂NX₆:D.

Embodiments provide the phosphor according to the preceding embodiments,wherein the parameter a is between 0.6 and 1.0, or between 0.8 and 1.0.

Embodiments provide the phosphor according to any of the precedingembodiments, having the general formula:Sr_((1−x−h))(Sr_(a)M_(1−a))_((1−y−i))A_((x+y))B_((b+i)/2)E_((h+i)/2)Si_((2−z))G_(z)Al₂N₆:D with M selected from Ca, Ba,Mg alone or in combination, A selected from divalent metals differentthan M, for example Cu, Zn or combinations thereof, B=trivalent metals,e.g. La, and E=monovalent metals, e.g. Li, where 0≦x+y≦0.4, preferably0.04≦x+y≦0.3 and 0≦h+i≦0.4, preferably 0.04≦h+i≦0.3.

Embodiments provide the phosphor according to any of the precedingembodiments, the phosphor having the general formula:Sr_((1−x))(Sr_(a)M_(1−a))_((1−y))B_((x+y))Si_(2−(x+y))Al_(2−(x+y))(N,X)₆:D,with B=trivalent metals, e.g. La, and: 0≦x+y≦0.4, preferably0.04≦x+y≦0.3.

Embodiments of the phosphor according to any of the precedingembodiments, the phosphor having the general formula:Sr_((1−x−h))(Sr_(a)M_(1−a))_((1−y−i))A_((x+y))B_((h+i)/2)E_((h+i)/2)Si_((2−z))G_(z)Al₂(N,X)₆:DorSr_((1−x))(Sr_(a)M_(1−a))_((1−y))B_((x+y))Si_(2−(x+y))Al_(2+(x+y))(N,X)₆:Dwith M selected from Ca, Ba, Mg alone or in combination, A selected fromdivalent metals other than M, for example Cu, Zn or combinationsthereof, B=trivalent metals, e.g. La, and E=monovalent metals, e.g. Li,where D=one, two or more elements from the group of Mn, Ce, Pr, Nd, Sm,Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb, preferably selected fromEu, Ce, Li, Mn and combinations thereof.

Embodiments provide the phosphor according to the preceding embodiments,where D=Eu and one or more alkali metals, preferably Li.

Embodiments provide the phosphor according to any of the precedingembodiments, the phosphor having the general formulaSr(Sr_(a)M_(1−a))Si₂Al₂N₆:D where M is selected from the group of Ca,Ba, Zn, Mg.

Embodiments provide the phosphor according to any of the precedingembodiments, the phosphor having the formula:Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D where D is at least one activating elementselected from the group of Mn, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er,Tm, Yb, and Lu, each alone or in combinations thereof.

Embodiments provide the phosphor according to any of the precedingembodiments, wherein the concentration of the activating element isbetween 0.1 mol % and 20 mol %, preferably between 0.1% and 10 mol %, or1 mol % to 10 mol %, based on the concentration of the alkaline earthmetals.

Various embodiments provide a process for producing a phosphor accordingto any of the preceding embodiments, wherein the process includes thesteps of A) providing reactants in the solid state for Sr, Al, Si andEu, and optionally for Ca, and optionally reactants for the elements A,B, E, L and G, B) mixing the reactants, C) heating the reactants underan inert gas atmosphere, preferably nitrogen atmosphere, or under aforming gas atmosphere, to at least 1500° C. and forming a calcinedcake, and D) comminuting the calcined cake to give the phosphor.

Embodiments provide the process according to the preceding embodiment,in which the reactant used for Sr, Al and/or Ca is a pure metal, a metalalloy, a silicide, a nitride, hydride, an oxynitride, an oxide, a halideor a mixture thereof, wherein the reactant used for Si is a siliconmetal, a silicon nitride, an alkaline earth metal silicide, a silicondiimide or a mixture thereof, and wherein the reactant used for Eu is atleast one of the following substances: europium metal, europium oxide,europium nitride, europium hydride, europium halide.

Embodiments provide the process according to previous embodiments inwhich at least one of the following substances is added as melting agentand/or as flux in step C): LiF, LiCl, NaF, NaCl, SrCl₂, SrF₂, CaCl₂,CaF₂, BaCl₂, BaF₂, NH₄Cl, NH₄F, KF, KCl, MgF₂, MgCl₂, AlF₃, H₃BO₃, B₂O₃,Li₂B₄O₇, NaBO₂, Na₂B₄O₇, LiBF₄, NH₄HF₂, NaBF₄, KBF₄, and EuF₃.

Embodiments provide the process according to any of the previousembodiments, in which, in a step E) that follows step D), calcination ofthe phosphor is effected at a temperature of at least 1500° C. underforming gas atmosphere.

Embodiments provide the process according to any of the previousembodiments, in which the temperature of at least 1500° C. is maintainedfor at least 2 h in step C) and/or in step E).

Embodiments provide the process according to any of the previousembodiments, in which the reactants used are Ca₃N₂, Sr₃N₂, AlN, Si₃N₄and Eu₂O₃, and optionally Mn₂O₃, CuO, Zn₃N₂, La₂O₃, Li₂B₄O₇ andgraphite, wherein the reactants are weighed out such that the followingatomic ratio is present: Sr:Ca:Al:Si:Eu=(1+a):(1−a):2:2:y, where y isthe proportion of divalent lattice sites which is replaced by Eu,wherein step B) is conducted in an oxygen-free and water-free manner ina nitrogen atmosphere, wherein the flux added is AlF₃, Li₂B₄O₇ and/orLiBF₄, wherein step C) is conducted at a temperature of 1650° C.±50° C.under an N₂/H₂ atmosphere for at least 3 h, and wherein at least step C)is conducted at a pressure between 0.9 bar and 1.5 bar inclusive.

Embodiments provide using the phosphor according to any of the previousembodiments in a light-emitting diode, wherein the light-emitting diodeincludes at least one semiconductor chip that emits blue light inoperation, with the luminophone arranged downstream of the semiconductorchip along a beam path.

In various embodiments a phosphor of the general empirical formulaSr(Sr_(a)M_(1−a))Si₂Al₂N₆:D where M is selected from the group of Ca,Ba, Zn, Mg and/or Li is provided

Embodiments provide the phosphor according to the preceding embodiment,wherein D is selected from Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tmand Yb, preferably D=Ce and Eu.

In various embodiments a lighting device comprises a radiation sourcethat emits primary radiation in the wavelength range between 300 nm and570 nm, a first phosphor according to any of the preceding embodimentswhich is disposed in the beam path of the primary radiation source andconverts at least a portion of the primary radiation to secondaryradiation within an orange to red wavelength range from 570 nm to 800nm, preferably 580 nm to 700 nm, further preferably 590 nm to 650 nm.

Embodiments provide the lighting device according to the precedingembodiment, additionally including a second phosphor which is disposedin the beam path of the primary radiation source and has a differentemission than the first phosphor.

Embodiments provide the lighting device according to the precedingembodiments, additionally including a second phosphor which is disposedin the beam path of the secondary radiation and absorbs and converts atleast a portion of the secondary radiation.

Embodiments provide the lighting device according to any of thepreceding embodiments, wherein the second phosphor includes the elementsM, A, D, E, and X, where M is one or more elements selected from thegroup consisting of: Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb,A is one or more elements selected from the group consisting of divalentmetal elements other than M, D is one or more elements selected from thegroup consisting of tetravalent metal elements, E is one or moreelements selected from the group consisting of trivalent metal elements,X is one or more elements selected from the group consisting of: O, N,and F, and which has the same crystal structure as CaAlSiN₃.

Embodiments provide the lighting device according to any of thepreceding embodiments, wherein the second phosphor has the generalstructural formula (Gd,Lu,Tb,Y)₃(Al,Ga,D)₅(O,X)₁₂:RE with X=halide, N ordivalent element, D=tri- or tetravalent element and RE=rare earth metalsas activator, especially cerium with an optional co-dopant.

Embodiments provide the lighting device according to the precedingembodiments, suitable for flash applications, having a second phosphorof the general formula (Gd,Lu,Tb,Y)₃(Al,Ga,D)₅(O,X)₁₂:RE with X=halideor divalent element, D=tri- or tetravalent element and RE=rare earthmetals as activator, especially cerium with an optional co-dopant,wherein the second phosphor is disposed in the beam path of the primaryradiation source.

Embodiments provide the lighting device according to the precedingembodiments, suitable for flash applications, wherein the secondphosphor has the general formula Lu₃(Al_(1−x)Ga_(x))₅O₁₂:Ce or(Lu,Y)₃(Al_(1−x)Ga_(x))₅(O)₁₂:Ce with a cerium content of 0.5-5 mol %,preferably 0.5-2 mol %, based in each case on the rare earth metals, anda gallium content x between 0 and 0.5, preferably between 0.15 and 0.3.

Embodiments provide the lighting device according to the precedingembodiments, suitable for flash applications, wherein the secondphosphor has the general formula (Gd,Y)₃(Al_(1−x)Ga_(x))₅O₁₂:Ce or(Tb,Y)₃(Al_(1−x)Ga_(x))₅(O)₁₂:Ce with a cerium content of 1.5-5 mol %,preferably 2.5-5 mol %, and a gallium content x of 0 to 0.5, preferablyx of 0 to 0.1.

Embodiments provide the lighting device according to any of thepreceding embodiments, suitable for flash applications, wherein a secondradiation source is additionally present, with phosphors disposed in thebeam path thereof that convert the primary radiation thereof to asecondary radiation, and wherein mixing of the secondary radiation fromthe first and second radiation sources results in an overall emission ofradiation from the lighting device.

Embodiments provide the lighting device according to the precedingembodiments, suitable for flash applications, wherein the color range ofthe converted radiation from the second radiation source is differentthan the color range of the converted radiation from the first radiationsource.

Embodiments provide the lighting device according to the precedingembodiment, suitable for flash applications, wherein the first andsecond radiation sources can be operated with different currents and acolor range of the overall emission radiation from the lighting devicecan be established via different currents for the first and secondradiation sources.

Embodiments provide the lighting device according to either of thepreceding embodiments, suitable for flash applications, wherein anoptical element, especially a lens, arranged downstream of the phosphorsof the first and second radiation sources mixes the secondary radiationfrom the first and second radiation sources to produce the overallemission of radiation.

Embodiments provide a lighting device for production of a white lighthaving a CRI≧80 according to the preceding embodiments, wherein thefirst phosphor has the general formula Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Dwhere 0.7≦a, preferably 0.8≦a, further preferably 0.84≦a, and the secondphosphor present is a garnet of the general formula(Gd,Lu,Y;Tb)₃(Al,Ga)₅(O)₁₂:RE with RE=rare earth metal, preferably Ce.

Embodiments provide the lighting device for production of a white lighthaving a CRI≧80 according to the preceding embodiment, wherein thesecond phosphor has the general formula Y₃(Al_(1−x)Ga_(x))₅(O)₁₂:Cewhere the proportion of Ga is 0.2≦x≦0.6, preferably 0.3≦x≦0.5, furtherpreferably 0.35≦x≦0.45.

Embodiments provide the lighting device for production of a white lighthaving a CRI≧90 according to previous embodiments, wherein the radiationsource emits a primary radiation in the wavelength range between 430 nmand 470 nm, preferably 440 and 460 nm, the second phosphor present is agarnet of the general formula (Gd,Lu,Y,Tb)₃(Al,Ga)₅(O)₁₂:RE, preferably(Lu,Y)₃(Al,Ga)₅(O)₁₂:RE, with RE=rare earth metal, preferably Ce.

Embodiments provide the lighting device for production of a white lighthaving a CRI≧90 according to the preceding embodiment, wherein the metalM in the first phosphor is Sr and Ca and the parameter a is as follows:0.7≦a, preferably 0.8≦a, further preferably 0.84≦a, and where theproportion of the activator D is ≧1.5%, preferably ≧3.5%, furtherpreferably ≧4.5%.

Embodiments provide the lighting device according to previousembodiments, wherein the second phosphor is selected from at least onephosphor from the group of the following phosphors: a beta-SiAlON of thegeneral formula Si_(6−z)Al_(z)O_(z)N_(8−z):Eu with 0≦z≦4,nano-semiconductor materials as quantum dots, nitridoorthosilicates ofthe general composition AE_(2−x)RE_(x)SiO_(4−x)N_(x):Eu with AE=Sr, Ca,Ba, Mg, RE=rare earth metals, or of the general compositionAE_(2−x)RE_(x)Si_(1−y)O_(4−x−2y)N_(x):Eu.

Embodiments provide the lighting device according to previousembodiments, suitable for backlighting applications, wherein the firstphosphor has the general formula Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D where0.7≦a, preferably 0.8≦a, further preferably 0.84≦a, and the proportionof the activator D is >=2 mol %, preferably >=3 mol %, furtherpreferably >=4 mol %, and the second phosphor has the general formulaY₃(Al_(1−x)Ga_(x))₅O₁₂:Ce with 0.2<=x<=0.6, preferably 0.3<=x<=0.5,further preferably 0.3<=x<=0.45, or Lu₃(Al_(1−x)Ga_(x))O₁₂:Ce with0<=x<=0.6, preferably 0<=x<=0.4, further preferably 0<=x<=0.25, with acerium content of 0.5-5 mol %, preferably 0.5-3 mol %, furtherpreferably 0.5-2.5 mol %, based in each case on the rare earth metals.

Embodiments provide the lighting device according to previousembodiments, suitable for backlighting applications, wherein the firstphosphor has the general formula Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D where0.7≦a, preferably 0.8≦a, further preferably 0.84≦a, and the proportionof the activator D is >=4 mol %, preferably >=8 mol %, furtherpreferably >=10 mol %, and wherein the second phosphor includes abeta-SiAlON Si_(6−x)Al_(z)O_(y)N_(8−y):RE_(z) where 0<x<=4, 0<y<=4,0<z<1 and RE contains one or more elements selected from rare earthmetals, preferably at least Eu and/or Yb.

Embodiments provide the lighting device according to previousembodiments, suitable for backlighting applications, wherein the firstphosphor has the general formula Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D where0.7≦a, preferably 0.8≦a, further preferably 0.84≦a, and the proportionof the activator D is ≧4 mol %, preferably ≧8 mol %, further preferably≧10 mol %, and the second phosphor has a general formulaAE_(2−x)L_(x)SiO_(4−x)N_(x):RE and/orAE_(2−x)L_(x)Si_(1−y)O_(4−x−2y)N_(x):RE and/or AE₂SiO₄:RE, where AEcontains one or more elements selected from Mg, Ca, Sr, Ba and REcontains one or more elements selected from rare earth metals,preferably at least Eu, and L contains one or more elements selectedfrom rare earth metals other than RE, with 0<x<0.1, preferably0.003≦x<=0.02, and 0≦y≦0.1, preferably 0.002≦y≦0.02.

Embodiments provide the lighting device according to the precedingembodiments, suitable for backlighting applications, wherein the secondphosphor, as AE, contains at least Sr and Ba, and the ratio of Sr and Bais as follows: 0.5≦Ba:Sr≦2, preferably 0.75≦Ba:Sr≦1.25.

Embodiments provide the lighting device according to precedingembodiments, suitable for backlighting applications, wherein the firstphosphor has the general formula Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D where0.7≦a, preferably 0.8≦a, further preferably 0.84≦a, and the proportionof the activator D is ≧4 mol %, preferably ≧8 mol %, further preferably≧10 mol %, and wherein the second phosphor contains quantum dots in theform of nanocrystalline materials including a group II-VI compoundand/or a group III-V compound and/or a group IV-VI compound and/or metalnanocrystals, which, on excitation with primary radiation, emitsecondary radiation in the green to yellow spectral region with a peakwavelength of 500-560 nm, preferably 510-550 nm, further preferably520-540 nm.

Embodiments provide the lighting device according to any of thepreceding embodiments, wherein the first phosphor is embedded in a firstmatrix material.

Embodiments provide the lighting device according to the precedingembodiments, wherein the first matrix material is selected from a groupof materials consisting of: glass, silicone, epoxy resin, polysilazane,polymethacrylate and polycarbonate, and combinations thereof.

Embodiments provide the lighting device according to any of thepreceding embodiments, wherein the first and/or second phosphor is inthe form of particles and has a median particle size of 5 to 30 μm.

Embodiments provide the lighting device according to any of thepreceding embodiments, wherein the first and/or second phosphor is inthe form of a ceramic converter element.

Embodiments provide the lighting device according to any of thepreceding embodiments, wherein the second phosphor is embedded in asecond matrix material.

Embodiments provide the lighting device according to any of thepreceding embodiments, wherein the first phosphor and the secondphosphor have been mixed with one another.

Embodiments provide the lighting device according to any of thepreceding embodiments, wherein the first phosphor and/or the secondphosphor are spaced apart from the radiation source.

Embodiments provide the lighting device according to any of thepreceding embodiments, wherein the radiation source comprises an LED, anOLED or a laser.

Embodiments provide the lighting device according to any of thepreceding embodiments, wherein a filter or filter particles thatabsorb(s) the primary radiation and/or partly absorb(s) the secondaryradiation is/are additionally present.

Embodiments provide a phosphor for emission of red light, having thegeneral empirical formula Sr_(x)Ca_(1−x)AlSiN₃:Eu, where 0.8≦x≦1,wherein between 0.1% and 5% inclusive of the Sr, Ca and/or Sr/Ca latticesites have been replaced by Eu, and wherein, in the x-ray structureanalysis, the phosphor in orthorhombic description exhibits a reflection(R) having the Miller indices 1 2 1.

Embodiments provide the phosphor according to the preceding embodiment,where 0.85≦x≦0.95, and wherein between 0.35% and 2.2% inclusive of theSr lattice sites have been replaced by Eu.

Embodiments provide the phosphor according to either of the precedingembodiments, which exhibits, in a powder diffractogram on monochromaticirradiation with Cu-K_(a1) radiation, the reflection (R) having theMiller indices 1 2 1 at 2θ between 36.7° and 37.0°.

Embodiments provide the phosphor according to the preceding embodiment,in which the reflection (R), based on a main reflection, exhibits anintensity between 0.3% and 8% inclusive.

Embodiments provide the phosphor according to any of the precedingembodiments, which has a dominant wavelength between 596 nm and 606 nminclusive, wherein a breadth of a radiation spectrum emitted by thephosphor at half the maximum height is between 75 nm and 87 nminclusive, and wherein the phosphor has a relative absorption maximum inthe wavelength range between 410 nm and 450 nm inclusive and can beinduced to emit radiation with blue light.

Embodiments provide the process for producing a phosphor according toany of the preceding embodiments, having the steps of: A) providingreactants in the solid state for Sr, Al, Si and Eu and optionally forCa, B) mixing the reactants, C) heating the reactants under a nitrogenatmosphere or under a forming gas atmosphere to at least 1500° C. andforming a calcined cake, and D) comminuting the calcined cake to givethe phosphor.

Embodiments provide the process according to the preceding embodiment,in which the reactant used for Sr, Al and/or Ca is a pure metal, a metalalloy, a silicide, a nitride, an oxynitride, an oxide, a halide or amixture thereof, wherein the reactant used for Si is a silicon metal, asilicon nitride, an alkaline earth metal silicide, a silicon diimide ora mixture thereof, and wherein the reactant used for Eu is at least oneof the following substances: europium metal, europium oxide, europiumnitride, a europium halide.

Embodiments provide the process according to any of the previousembodiments, in which at least one of the following substances is addedas melting agent and/or as flux in step C): LiF, LiCl, NaF, NaCl, SrCl₂,SrF₂, CaCl₂, CaF₂, BaCl₂, BaF₂, NH₄Cl, NH₄F, KF, KCl, MgF₂, MgCl₂, AlF₃,H₃BO₃, B₂O₃, Li₂B₄O₇, NaBO₂, Na₂B₄O₇, LiBF₄.

Embodiments provide the process according to any of the previousembodiments, in which, in a step E) that follows step D), calcination ofthe phosphor is effected at a temperature of at least 1500° C. underforming gas atmosphere.

Embodiments provide the process according to any of the previousembodiments, in which the temperature of at least 1500° C. is maintainedfor at least 2 h in step C) and/or in step E).

Embodiments provide the process according to any of the previousembodiments, in which the reactants used are Ca₃N₂, Sr₃N₂, AlN, Si₃N₄and Eu₂O₃, wherein the reactants are weighed out such that the followingatomic ratio is present: Ca:Sr:Al:Si:Eu=(1−x):x:1:3:y, where y is theproportion of Sr lattice sites which is replaced by Eu, wherein step B)is conducted in an oxygen-free and water-free manner in a nitrogenatmosphere, wherein the flux added is AlF₃, Li₂B₄O₇ and/or LiBF₄,wherein step C) is conducted at a temperature of 1650° C.±50° C. underan N₂/H₂ atmosphere for at least 3 h, and wherein at least step C) isconducted at a pressure between 0.9 bar and 1.5 bar inclusive.

Embodiments provide the use of a phosphor according to any of theprevious embodiments in a light-emitting diode, wherein thelight-emitting diode includes at least one semiconductor chip that emitsblue light in operation, with the phosphor arranged downstream of thesemiconductor chip along a beam path.

One general aspect includes a lighting device including: a primaryradiation source configured to emit primary radiation in a wavelengthrange between 300 nm and 570 nm and a first phosphor disposed in a beampath of the primary radiation source, the first phosphor configured toconvert at least a portion of the primary radiation to a secondaryradiation within an orange to red wavelength range from 570 nm to 800nm. The first phosphor includes an inorganic substance which includes,in its composition, at least an element D, an element Al, an element AX,an element SX and an element NX, wherein the element D is one or moreelements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu,Tb, Dy, Ho, Er, Tm, alkali metals and Yb, wherein the element Al is oneor more elements selected from divalent metals not included in D,wherein the element SX is one or more elements selected from tetravalentmetals, wherein the element AX is one or more elements selected fromtrivalent metals, wherein the element NX is one or more elementsselected from the group consisting of O, N, S, C, Cl and F, and whereinthe inorganic substance has the same crystal structure asSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆ and crystallizes in space groups P1, P2, P1or P2₁.

Implementations may include one or more of the following features. Thefirst phosphor has the formula Al(Al_(a)M_(1−a))SX₂AX₂NX₆:D, wherein Mis a divalent metallic element different from those of element Al, andwherein a parameter a is between 0.6 and 1.0.

Implementations may further include a second phosphor which is disposedin the beam path of the primary radiation source and has a differentemission than the first phosphor.

Implementations may include that the second phosphor includes theelements M, A, D, E, and X, wherein the element M is one or moreelements selected from the group consisting of Mn, Ce, Pr, Nd, Sm, Eu,Tb, Dy, Ho, Er, Tm, and Yb, wherein the element A is one or moreelements selected from divalent metal elements other than those of theelement M, wherein the element D is one or more elements selected fromtetravalent metal elements, wherein the element E is one or moreelements selected from trivalent metal elements, wherein the element Xis one or more elements selected from the group consisting of O, N, andF, and wherein the second phosphor has the same crystal structure asCaAlSiN₃.

Implementations may include that the second phosphor has the formula:(Gd,Lu,Tb,Y)₃(Al,Ga,D)₅(O,X)₁₂:RE or (Gd,Lu,Tb,Y)₃(Al,Ga)₅(O)₁₂:RE,wherein element X is selected from a halide, N or a divalent element,wherein element D is selected from a trivalent element or a tetravalentelement, and wherein RE is selected from rare earth metals asactivators.

Implementations may include that the second phosphor has the formula:(Gd,Lu,Tb,Y)₃(Al,Ga,D)₅(O,X)₁₂:RE, wherein element X is selected from ahalide or a divalent element, wherein element D is selected from atrivalent element or a tetravalent element, wherein RE is selected fromrare earth metals as activators, wherein the second phosphor is disposedin the beam path of the primary radiation source, and wherein thelighting device is configured to provide a flash.

Implementations may include that the second phosphor has the formula:the second phosphor has the formula: Lu₃(Al_(1−x)Ga_(x))₅O₁₂:Ce or(Lu,Y)₃(Al_(1−x)Ga_(x))₅(O)₁₂:Ce, wherein a cerium content is of 0.5-5mol % based on the rare earth metals, and wherein a gallium content x isbetween 0 and 0.5.

Implementations may include that the second phosphor has the formula:(Gd,Y)₃(Al_(1−x)Ga_(x))₅O₁₂:Ce or (Tb,Y)₃(Al_(1−x)Ga_(x))₅(O)₁₂:Ce,wherein a cerium content is of 1.5-5 mol %, wherein a gallium content xis of 0 to 0.5, and wherein the lighting device is configured to providea flash.

Implementations may further include a secondary radiation source withphosphors disposed in the beam path thereof that convert the primaryradiation thereof to a secondary radiation, wherein mixing of thesecondary radiation of the primary and secondary radiation sourcesresults in an overall emission of radiation from the lighting device,and wherein the lighting device is configured to provide a flash.

Implementations may include that a color range of the convertedradiation from the second radiation source is different than a colorrange of the converted radiation from the first radiation source.

Implementations may include that the first and second radiation sourcescan be operated with different currents and a color range of the overallemission radiation from the lighting device can be established viadifferent currents for the first and second radiation sources.

Implementations may include that an optical element arranged downstreamof the phosphors of the first and second radiation sources mixes thesecondary radiation from the first and second radiation sources toproduce the overall emission of radiation.

Implementations may include that the first phosphor has the formula:Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D, wherein a parameter a is 0.7≦a, whereinthe second phosphor is a garnet of the formula:((Gd,Lu,Y;Tb)₃(Al,Ga)₅(O)₁₂:RE, wherein RE is selected from a rare earthmetal, and wherein the lighting device is configured to produce a whitelight having a CRI≧80.

Implementations may include that the second phosphor has the formula:Y₃(Al_(1−x)Ga_(x))₅(O)₁₂:Ce, and wherein a proportion of Ga is0.2≦x≦0.6.

Implementations may include that the primary radiation source emits theprimary radiation in the wavelength range between 430 nm and 470 nm,wherein the second phosphor is a garnet of the formula:(Gd,Lu,Y,Tb)₃(Al,Ga)₅(O)₁₂:RE or (Lu,Y)₃(Al,Ga)₅(O)₁₂:RE, wherein RE isselected from a rare earth metal, and wherein the lighting device isconfigured to produce a white light having a CRI≧90.

Implementations may include that the element M in the first phosphor isSr and Ca and a parameter a is as follows: 0.7−a, and wherein aproportion of an activator D is ≧1.5%.

Implementations may include that the second phosphor is selected from atleast one phosphor from the following phosphors: a beta-SiAlON of theformula: Si_(6−z)Al_(z)O_(z)N_(8−z):Eu with 0<z≦4, nano-semiconductormaterials as quantum dots, nitridoorthosilicates of a compositionAE_(2−x)RE_(x)SiO_(4−x)N_(x):Eu, wherein AE is selected from the groupconsisting of Sr, Ca, Ba and Mg, wherein RE is selected from rare earthmetals, or of the composition AE_(2−x)RE_(x)Si_(1−y)O_(4−x−2y)N_(x):Eu.

Implementations may include that the first phosphor has the formula:Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D, wherein a is 0.7≦a, wherein a proportionof an activator D is ≧2 mol %, wherein the second phosphor has theformula: Y₃(Al_(1−x)Ga_(x))₅O₁₂:Ce with 0.2≦x≦0.6 orLu₃(Al_(1−x)Ga_(x))O₁₂:Ce with 0≦x≦0.6, wherein a cerium content is of0.5-5 mol % based on rare earth metals, and wherein the lighting deviceis configured to provide backlighting.

Implementations may include that the first phosphor has the formula:Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D, wherein a is 0.7≦a, wherein a proportionof an activator D is ≧4 mol %, wherein the second phosphor includes abeta-SiAlON Si_(6−x)Al_(z)O_(y)N_(8−y):RE_(z), wherein 0<x≦4, 0<y≦4,0<z<1, wherein RE contains one or more elements from rare earth metals,and wherein the lighting device is configured to provide backlighting.

Implementations may include that the first phosphor has the formula:Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D, wherein a is 0.7≦a, wherein a proportionof an activator D is ≧4 mol %, wherein the second phosphor has theformula: AE_(2−x)L_(x)SiO_(4−x)N_(x):RE and/orAE_(2−x)L_(x)Si_(1−y)O_(4−x−2y)N_(x):RE and/or AE₂SiO₄:RE, wherein AEcontains one or more elements selected from the group consisting of Mg,Ca, Sr and Ba, wherein RE contains one or more elements selected fromrare earth metals, wherein L contains one or more elements selected fromrare earth metals other than RE, with 0<x≦0.1, and wherein the lightingdevice is configured to provide backlighting.

Implementations may include that the second phosphor, as AE, contains atleast Sr and Ba, and a ratio of Sr and Ba is as follows: 0.5≦Ba:Sr≦2.

Implementations may include that the first phosphor has the formula:Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D, wherein a is 0.7≦a, wherein a proportionof an activator D is ≧4 mol %, wherein the second phosphor containsquantum dots in the form of nanocrystalline materials including a groupII-VI compound and/or a group III-V compound and/or a group IV-VIcompound and/or metal nanocrystals, which, on excitation with primaryradiation, emit secondary radiation in a green to a yellow spectralregion with a peak wavelength of 500-560 nm, and wherein the lightingdevice is configured to provide backlighting.

Implementations may further include a third phosphor, wherein the firstphosphor has the formula: Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:D, wherein M isselected from the group consisting of Ca, Ba, Zn and Mg, wherein thesecond phosphor is a yellow/green-emitting garnet phosphor of theformula: (Y,Lu,Gd,Tb)₃(Al,Ga)₅O₁₂:Ce having a peak wavelength of 500-570nm, and wherein the third phosphor is an orange/red-emitting phosphor ofthe formula: Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:D, wherein M is selected from thegroup consisting of Ca, Ba, Zn and Mg, or wherein the third phosphor isan orange/red-emitting phosphor of the formula: M₂(Si,Al)₅(N,O)₈:Eu,with M selected from the group consisting of Ca, Sr and Ba.

Implementations may further include a third phosphor, wherein the firstphosphor has the formula: Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:D, wherein M isselected from the group consisting of Ca, Ba, Zn and Mg, wherein thesecond phosphor is a yellow/green-emitting garnet phosphor of theformula: (Y,Lu,Gd,Tb)₃(Al,Ga)₅O₁₂:Ce having a peak wavelength of 500-570nm, and wherein the third phosphor is a yellow-emitting garnet phosphorof the formula: (Y,Lu,Gd,Tb)₃(Al,Ga)₅O₁₂:Ce having a peak emissionwavelength of 500 to 600 nm.

Implementations may further include a third phosphor, wherein the firstphosphor has the formula: Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:D, wherein M isselected from the group consisting of Ca, Ba, Zn and Mg, wherein D isselected from Eu and the first phosphor has a peak wavelength between605-620 nm and a half-height width FWHM≦80 nm, wherein the secondphosphor is a yellow/green-emitting garnet phosphor of the formula:(Y,Lu,Gd)₃(Al,Ga)₅O₁₂:Ce having a peak wavelength between 540-565 nm anda half-height width FWHM≧100 nm, and wherein the third phosphor ayellow/orange-emitting phosphor having a peak wavelength of 580-590 nmand a half-height width FWHM≦80 nm.

Implementations may further include a second phosphor disposed in a beampath of the secondary radiation, wherein the second phosphor isconfigured to absorb and convert at least a portion of the secondaryradiation.

Implementations may include that the primary radiation source comprisesan LED, an OLED or a laser.

Another general aspect includes a lighting device including: a primaryradiation source configured to emit primary radiation in a wavelengthrange between 300 nm and 570 nm and a first phosphor disposed in a beampath of the primary radiation source, the first phosphor configured toconvert at least a portion of the primary radiation to a secondaryradiation within an orange to red wavelength range from 570 nm to 800nm. The first phosphor has the formula:Sr(Sr_(a)M_(1−a))Si₂Al₂(N,X)₆:D,A,B,E,G,L, wherein element M is selectedfrom Ca, Ba, Mg alone or in combination, wherein element D is one ormore elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm,Eu, Tb, Dy, Ho, Er, Tm, alkali metals, and Yb, wherein element A isselected from divalent metals different than those of the elements M andD, wherein element B is selected from trivalent metals, wherein elementE is selected from monovalent metals, wherein element G is selected fromtetravalent elements, wherein element L is selected from trivalentelements, wherein element X is selected from O or halogen, wherein aparameter a is between 0.6 and 1.0, and wherein the first phosphorcrystallizes in space groups P1, P2, P1 or P2₁.

Yet another general aspect includes a lighting device including: aprimary radiation source configured to emit primary radiation in awavelength range between 300 nm and 570 nm and a first phosphor disposedin a beam path of the primary radiation source, the first phosphorconfigured to convert at least a portion of the primary radiation to asecondary radiation within an orange to red wavelength range from 570 nmto 800 nm. The first phosphor has the formula:Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:D, wherein element M is selected from Ca, Ba,Zn, Mg and/or Li, wherein element D is selected from the groupconsisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb, whereina parameter a is between 0.6 and 1.0, and wherein the first phosphorcrystallizes in space groups P1, P2, P¹ or P2₁.

A further general aspect includes a light-emitting diode including atleast one semiconductor chip configured to emit blue light, a phosphorarranged downstream of the semiconductor chip along a beam path whereinthe phosphor is capable for emission of red light and has the formula:SrxCa1−xAlSiN3:Eu, wherein x is 0.8<x≦1, wherein between 0.1% and 5%inclusive of the Sr, Ca and/or Sr/Ca lattice sites have been replaced byEu, and wherein, if an x-ray structure analysis were to be performed,the phosphor in orthorhombic description exhibits a reflection (R)having the Miller indices 1 2 1.

BRIEF DESCRIPTION OF THE DRAWINGS

A phosphor described here is elucidated in detail hereinafter byembodiments with reference to drawings. Identical reference numeralsindicate identical elements in the individual figures. However, thedrawings are not to scale; instead, individual elements may be shown inexcessively large size for better understanding.

FIG. 1 shows a relationship between x and FWHM;

FIG. 2 shows the ratio between a dominant wavelength and the FWHM forvarious phosphors;

FIG. 3 shows a comparison of spectral data for phosphors or phosphormixtures;

FIG. 4 shows LED efficiencies for various phosphors or phosphormixtures;

FIG. 5 shows a further comparison of spectral data for phosphors orphosphor mixtures;

FIG. 6 shows LED efficiencies for various phosphors or phosphormixtures;

FIG. 7 shows another comparison of spectral data for phosphors orphosphor mixtures;

FIG. 8 shows a red phosphors subjected to a hydrolysis test with respectto air humidity;

FIGS. 9a and 9b show an examination of moisture stability of phosphorsaccording to embodiments;

FIGS. 10a and 10b show SEM images for various phosphors;

FIGS. 11a and 11b show SEM images for further phosphors;

FIG. 12 shows thermal quenching characteristics of two red phosphors incomparison to one another;

FIG. 13 shows the relative external quantum efficiency QE for apreviously known phosphor composed of 1113-calsin system;

FIG. 14 shows another relative external quantum efficiency QE for apreviously known phosphor;

FIG. 15 shows yet another relative external quantum efficiency QE for apreviously known phosphor;

FIG. 16 shows the relative emission intensity I as a function of dopingEu;

FIG. 17 shows the influence of the degree of doping with Eu on theemission wavelength;

FIG. 18 shows the crystallographic relationship between variouslight-emitting nitrides;

FIG. 19 shows an overview of some structural data known from theliterature for nitrides of similar composition;

FIGS. 20a-20c show a Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆ structure according toembodiments;

FIG. 21 shows experimental results and underlying parameters;

FIG. 22 shows interatomic distances in the structureSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆;

FIG. 23 shows crystallographic data and positional parameters for thecompound Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆;

FIGS. 24a-24c illustrate the structure of the phosphor typeSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆;

FIGS. 25-34 show crystallographic evaluations;

FIGS. 35a and 35b show emission spectra and reflectance spectra ofphosphors according to embodiments compared to known phosphors;

FIGS. 36a and 36b show emission spectra and reflectance spectra ofphosphors according to further embodiments compared to known phosphors;

FIG. 37 shows a semiconductor component which serves as light source(LED) for white light;

FIG. 38 shows a lighting unit comprising phosphors according to thepresent invention;

FIGS. 39a -39 zd show starting weights m in g for various reactants forproduction of conventional and inventive phosphors;

FIGS. 40a and 40b show a table with different parameters for a phosphoraccording to embodiments and a comparative phosphor and anintensity/wavelength diagram;

FIGS. 41a and 41b show a further table with different parameters for aphosphor according to embodiments and a comparative phosphor and afurther intensity/wavelength diagram;

FIGS. 42a and 42b show another table with different parameters for aphosphor according to embodiments and a comparative phosphor and anotherintensity/wavelength diagram;

FIGS. 43a and 43b show yet another table with different parameters for aphosphor according to embodiments and a comparative phosphor and yetanother intensity/wavelength diagram;

FIGS. 44a and 44b show one more table with different parameters for aphosphor according to embodiments and a comparative phosphor and onemore another intensity/wavelength diagram;

FIGS. 45a and 45b show a final table with different parameters for aphosphor according to embodiments and a comparative phosphor and a finalintensity/wavelength diagram;

FIG. 45c shows phosphors according to embodiments of the inventionhaving increased europium content;

FIG. 45d shows emission spectra of phosphors according to embodiments ofthe invention;

FIGS. 46a-46e show various embodiments of lighting devices of theinvention that are suitable for streetlighting applications and theoptical properties thereof;

FIGS. 47a-47i show further various embodiments of lighting devices ofthe invention that are suitable for street lighting applications and theoptical properties thereof;

FIGS. 48a-48j show embodiments of lighting devices of the invention forbacklighting applications and the optical properties thereof;

FIGS. 49a-49g show experimental data for various comparative andinventive examples of lighting devices for flash applications;

FIGS. 50a-50e show further experimental data for various comparative andinventive examples of lighting devices for flash applications;

FIGS. 51a-51h show experimental data for lighting devices according tovarious comparative and inventive examples for warm whitegeneral-purpose lighting applications with high CRI;

FIGS. 52a-52h show further experimental data for lighting devicesaccording to various comparative and inventive examples for warm whitegeneral-purpose lighting applications with high CRI;

FIGS. 53a-53d show additional experimental data for lighting devicesaccording to various comparative and inventive examples for warm whitegeneral-purpose lighting applications with high CRI;

FIGS. 54-57 show the light yield and the composition of the phosphorsfor various LEDs in LARP applications according to comparative examplesand inventive examples and the corresponding emission spectra thereof;

FIGS. 58a-58c show the effects of different Eu dopant concentrations onthe dominant wavelength, the relative intensity of photoluminescence andthe relative photoluminescence intensity assessed by eye;

FIGS. 59a-59g show the composition of phosphors of the invention whichhave been co-doped with Cu, Zn, La and Li, and their spectra and x-raydiffractograms;

FIGS. 60a and 60b show the nominal composition and the spectra ofphosphors of the invention which have been co-doped with carbon;

FIGS. 61a-61d show the nominal composition and the spectra of phosphorsof the invention which have been doped with various activators,including europium, cerium, lithium and manganese;

FIGS. 62a-62e show various properties of phosphors of the invention andthe x-ray diffractograms thereof, these having been co-doped not onlywith europium but also with lithium;

FIGS. 63-67 show various embodiments of lighting devices comprising thephosphors of the invention in cross section;

FIGS. 68a and 68b show further embodiments of lighting devicescomprising the phosphors of the invention in cross section;

FIGS. 69-73 b show various other embodiments of lighting devicescomprising the phosphors of the invention in cross section;

FIGS. 74a-74c shows starting weights for modifications of phosphorsaccording to embodiments and the color locus that they emit;

FIGS. 75-79 show schematic diagrams of properties of phosphors onexcitation with blue light according to embodiments;

FIG. 80 shows LED efficiencies for various phosphors or phosphormixtures according to embodiments;

FIG. 81 shows LED efficiencies for various phosphors or phosphormixtures according to embodiments;

FIG. 82 shows a table with conversion efficiencies and color renderingindices for various warm white light-producing LEDs;

FIGS. 83-87 show schematic diagrams of properties of phosphors onexcitation with blue light according to further embodiments;

FIGS. 88-90 show data based on x-ray structure analysis of phosphorsaccording to embodiments;

FIG. 91 shows a schematic diagram of a structure of a phosphor accordingto embodiments; and

FIG. 92 shows a further schematic diagram of a structure of amodification of a phosphor according to embodiments.

A phosphor described here is elucidated in detail hereinafter byembodiments with reference to the drawing. Identical reference numeralsindicate identical elements in the individual figures. However, thedrawings are not to scale; instead, individual elements may be shown inexcessively large size for better understanding.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

One embodiment of a phosphor described here can be produced as follows:reactants used for the synthesis of the phosphor of the generalempirical formula Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu are the binary nitridesof the constituent elements, i.e. Ca₃N₂, Sr₃N₂, AlN and Si₃N₄. Sincethese are highly oxidation-sensitive and hydrolysis-sensitivesubstances, what is called a glovebox is employed, under an N₂atmosphere with O₂<1 ppm and H₂O<1 ppm. In addition, doping with Eu²⁺ isaccomplished using Eu₂O₃. The reactants are weighed out such that thefollowing atomic ratio is effectively present, in a simplifyingrepresentation: Sr:Ca:Si:Al:Eu=(1+a):(1−a):2:2:y, where y corresponds tothe degree of doping, i.e. the proportion of divalent lattice siteswhich are substituted by Eu. In addition, various fluxes are added; seethe above explanation. A reactant mixture is scaled up, for example, toa total starting weight of 50-100 g with retention of the atomic ratiosdescribed above. It is also possible to use other total startingweights.

The reactant mixture is introduced, for example, into a PET mixingvessel together with ZrO₂ balls and mixed on a roller table in aglovebox for 6 h. Subsequently, the balls are removed from the mixtureand the powder is transferred into a closed molybdenum crucible. Thiscrucible is placed into an outer tungsten crucible, a semicircular opentungsten tube, and transferred into a tube furnace. There is a flow of 3l/min of forming gas with 92.5% N₂ and 7.5% H₂ through the tubularfurnace during the run time. In the tubular furnace, the mixture isheated at a rate of 250 K/h to 1650° C., kept at this temperature for 4h and then cooled down at 250 K/h to 50° C. The calcined cake formed istaken out after the furnace has cooled, comminuted with a mortar milland sieved through a sieve having a mesh size of 31 μm. The sievefraction <31 μm is the phosphor used.

The sieving may optionally be followed by a further calcining, temperingand/or washing operation and/or a coating operation.

Illustrative starting weights m in g and resulting color loci CIE x, CIEy, also referred to as chromaticity coordinates, of the emissionspectrum of the particular phosphor in the CIE standard chromaticitydiagram on excitation with blue light at 460 nm and on completeabsorption of the blue light are listed in tabular form in FIGS. 39a -39zd. Starting weights with x≦0.8 refer here to conventional phosphors,whereas starting weights with x>0.8 (corresponding to a>0.6) indicatephosphors of the invention.

FIG. 1 shows the relationship between x and FWHM.

FIG. 1 shows a dependence of a spectral half-height width FWHM of theemission on the Sr content for embodiments of the novel phosphorSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu of the invention (open symbols) comparedto known phosphors composed of the Sr_(x)Ca_(1−x)AlSiN₃:Eu system (solidsymbols). The Sr content corresponds to the parameter a forSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu or x for Sr_(x)Ca_(1−x)AlSiN₃:Eu, wherea=2x−1. The parameter a is indicated by alpha in the figure.

For the phosphor according to the prior art, a very small change in theFWHM with rising x is observed (dotted line). The novel phosphor of theinvention, in contrast, at an Sr content of a>0.6, which wouldcorrespond in formal terms to an x>0.8 in the case of the knownphosphor, exhibits a very significant change in the half-height widthFWHM with rising a. Moreover, the half-height width of the novelphosphor is significantly lower than in the case of the phosphoraccording to the prior art. The parameter a can therefore readily bechosen between 0.6 and 1.0, or between 0.8 and 1.0; boundary values arepreferably excluded. Very good properties are exhibited especially byphosphors having a value of a between 0.64 and 0.96, or between 0.82 and0.98, including the boundary values. Particular preference is given to arange for a between 0.68 and 0.92, or between 0.84 and 0.96, includingthe boundary values.

In the case of use of constituents other than Sr, Ca, the value of a mayalso be much lower.

FIG. 2 shows the ratio between ldom (dominant wavelength) and the FWHMfor various phosphors.

What is shown here is a dependence of a spectral half-height width FWHMof the emission on the Sr content for embodiments of the novel phosphorSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu of the invention (open symbols) comparedto known phosphors composed of the Sr_(x)Ca_(1−x)AlSiN₃:Eu system (solidsymbols). The Sr content corresponds to the parameter a forSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu or x for Sr_(x)Ca_(1−x)AlSiN₃:Eu, wherea=2x−1. In addition, a dominant wavelength ldom of the spectrum emittedby the phosphor and the Eu content are specified.

Surprisingly, a phosphor Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu of the inventionwith a=0.8 (which would correspond to x=0.9), with a comparable dominantwavelength ldom, shows a much smaller half-height width FWHM compared toconventional phosphors of the Sr_(x)Ca_(1−x)AlSiN₃:Eu type. The muchsmaller half-height width FWHM is virtually independent of the Eucontent of the sample used.

FIG. 3 gives a comparison of spectral data.

Phosphors of the novel type feature a small half-height width FWHM ofthe emission compared to the previously known phosphor (within the rangeof 79 to 81 compared to 86 to 88 for the prior art) and a very highluminous efficiency LER (110 to 111% compared to 100 to 101% for theprior art) combined with simultaneously high internal quantum efficiencyQI and external quantum efficiency QE (about 113% compared to 100% to110% for the prior art); see the table in FIG. 3. In addition, arelative brightness B is specified (about 125 to 126% compared to about100 to 111% for the prior art). To calculate the external quantumefficiency QE, the mean re-emission within the range from 450 nm to 470nm was employed; measurement was effected in pressed powder tablets atan excitation wavelength of 460 nm. Also specified are the x and ycomponents of the color locus.

FIG. 4 compares the LED efficiency of various systems. The relativeconversion efficiencies of various warm white light-emitting diodes,LEDs for short, are shown. In each case, a mixture of two phosphors thatemit green and red light was used, with the green light-emittingphosphor G remaining the same (such phosphors, especially garnets dopedwith Ce, are known per se) and the red-emitting phosphor R being varied.Stated on the abscissa axis for four different phosphors is the type ofred-emitting phosphor R. The ordinate axis gives the relative efficiencyE. The phosphors were excited with a blue-emitting semiconductor chiphaving a dominant wavelength of 446 nm.

All the phosphor mixtures were adjusted such that, in the CIE standardchromaticity diagram, a color locus close to Planck with a correlatedcolor temperature CCT of about 2700 K is attained. The color renderingindex CRI of all the LEDs measured is 80±1. All the red phosphors R usedshow a comparable dominant wavelength of about 600.5 nm±1 nm.

Further details of the phosphor mixtures as shown in FIG. 4 can be foundin the table in FIG. 5. Additionally stated are the relative efficiencyE (rel. eff.), a phosphor concentration c (phosphor concentration) and aratio V of the green phosphor G and the red phosphor R (ratiogreen/red).

FIG. 6 shows a comparison of conversion efficiency and color renderingindex for various warm white light-producing LEDs. In each case, amixture of two phosphors was used, with the green phosphor G being keptconstant and the red phosphor R being varied, analogously to the tablein FIG. 5. All the phosphor mixtures were adjusted such that a colorlocus close to Planck having a correlated color temperature CCT of about2700 K is achieved. The relative conversion efficiency E (left-handordinate), the relative size of which is illustrated by the columns inFIG. 6, of a warm white light-producing LED with the novel phosphorhaving a total of 90% Sr at the alkaline earth metal site (shown on theright) shows a much higher efficiency (about 6% compared to a258-nitride) and simultaneously improved color rendering CRI (right-handordinate, the color rendering index is symbolized as black rhombuses)compared to LEDs having a previously known red phosphor with only 80% Sr(1113-calsin type) or an even lower Sr content (258-nitridosilicatetype) at the alkaline earth metal site.

Further data relating to the LED measurements from FIG. 6 can be foundin the table in FIG. 7, analogously to the table in FIG. 5. Theefficiency E (rel. eff.) of a warm white light-producing LED withcorrelated color temperature CCT of about 2700 K having a novel redphosphor having a total Sr content of 90% at the alkaline earth metalsite (together with a green garnet phosphor) is distinctly higher heretoo, and an elevated color rendering index CRI is also achievable.

Red phosphors composed of the novel material system were subjected to ahydrolysis test in order to assess aging stability of the phosphor withrespect to air humidity; see FIG. 8. Specifically, red phosphorscomposed of the Sr_(x)Ca_(1−x)AlSiN₃:Eu material system and oneembodiment of the novel Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu phosphor of theinvention were subjected to a hydrolysis test, in order to assess theaging stability of the phosphor with respect to air humidity. For thispurpose, the phosphor powders were stored at 130° C. and 100% rel. airhumidity for 40 h. The relative absorption A of the phosphors in theblue spectral region (450-470 nm) as ordinate was measured both beforeand after this treatment. A measure of the stability of a phosphor tohydrolysis, i.e. the decomposition of the phosphor in the presence ofwater, is considered to be the decrease in the absorption capacity inthe blue spectral region. With increasing Sr content, according to FIG.8, for phosphors composed of the known SrxCa1−xAlSiN3:Eu system, asignificant increase in hydrolysis sensitivity is observed (solidrhombuses). Surprisingly, however, the novel(Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu) phosphor with a=0.8 (corresponding in aformal sense to 90% Sr in a representation as x=0.9) is morehydrolysis-stable (hollow rhombus) than a previously knownSr_(x)Ca_(1−x)AlSiN₃:Eu phosphor having an Sr content of 80% (x=0.8).

In FIG. 9, the moisture stability of the novel phosphor is examined.

To improve the stability of the novel phosphor of the invention tohydrolysis, specimens of the phosphor were coated with an inert material(SiO2) after the synthesis.

Untreated and subsequently coated samples were subjected to a hydrolysistest, in order to assess the aging stability of the phosphor to airhumidity. For this purpose, the phosphor powders were stored at 130° C.and 100% rel. air humidity for 48-56 h. The quantum efficiency and theabsorption of the phosphors in the blue spectral region (450-470 nm)were measured both before and after this treatment. A measure of thestability of a phosphor with respect to hydrolysis (decomposition of thephosphor in the presence of water) is considered to be the change in therelative conversion efficiency (calculated from the quantum efficiencyand absorption in the spectral range of 450-470 nm) before and after thedegradation test. The coating distinctly improves the stability.

FIGS. 10a and 10b show SEM images of various phosphors.

The figures show SEM images of the uncoated phosphor before and afterthe degradation process in different magnifications. What are shown areembodiments of the novel phosphor having the compositionSr(Sr_(0.8)Ca_(0.2))Si₂Al₂N₆:1.2% Eu .

Formation of cracks in the individual phosphor grains is apparent in theSEM images of the sample after the degradation test.

FIGS. 11a and 11b show SEM images of various phosphors.

The figures show SEM images of the coated phosphor before and after thedegradation process in different magnifications.

What are shown are embodiments of the novel phosphor having thecomposition Sr(Sr_(0.8)Ca_(0.2))Si₂Al₂N₆:1.2% Eu.

No formation of cracks in the phosphor grains is apparent in the SEMimages of the sample after the degradation test.

FIG. 12 shows thermal quenching characteristics of two red phosphors incomparison to one another. Both phosphors have a comparable emissioncolor, with a dominant wavelength of approximately 600 nm. Surprisingly,the novel phosphor Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu of the invention witha=0.8 (solid squares), in spite of a higher Eu content (0.8%), has asmaller decrease in emission intensity I (ordinate) with risingtemperature compared to the reference phosphor composed of the knownSr_(x)Ca_(1−x)AlSiN₃:Eu system; in that case, the Eu content is 0.6%(hollow rhombuses).

FIG. 13 shows the relative external quantum efficiency QE for apreviously known phosphor composed of the 1113-calsin system. The dataare taken from EP 2 135 920.

What is reported therein about these phosphors composed of theCaAlSiN₃:Eu system (referred to hereinafter as calsin) is that theconversion efficiency stagnates with rising activator content (>0.8%Eu).

Similar behavior is also known for SCASN. The described phosphorcomposed of the (Sr,Ca)AlSiN₃:Eu system with Sr content 80% shows strongdependence of the relative emission intensity of the luminescence signalon the activator content. This behavior is described, for example, in H.Watanabe et al., J. Electrochem. Soc., 2008, 155 (3), F31-F36. Thebehavior is shown in FIG. 14.

In contrast to pure calsin (cf. FIG. 13), the photoluminescenceintensity actually collapses from a value of about 0.8% Eu or more forSCASN and only attains 60% of the maximum value.

Similar behavior is also described in U.S. Pat. No. 8,274,215.

In the case of an Eu content of at least 1% (x=0.01), the luminescencesignal decreases or virtually stagnates (Sr content: 80%). FIG. 15 showsthe figure derived therefrom. The inventors of U.S. Pat. No. 8,274,215note in this regard that, with rising Eu content (up to the value ofx=0.01), the intensity of the photoluminescence increases, then itremains the same or decreases.

FIG. 16 shows, in contrast, the relative emission intensity I as afunction of the doping of Eu as activator, which replaces the alkalineearth metal content, for a novel phosphor. The Eu content is given herein %. Surprisingly, the novel phosphor (shown in the abscissa) showsbehavior distinctly different from the prior art. With rising Eucontent, the emission intensity I increases noticeably even in the caseof an Eu content well above 1%, and in fact in an approximately linearmanner. This property offers various technical advantages for theapplication. These include a relatively low phosphor requirement and thepossibility of attaining color loci with relatively large x, understoodas the first CIE component, and also high dominant wavelength lambdadom(ldom). With rising activator content Eu (shown as parameter y in %),the luminescence signal moves to greater wavelengths in an approximatelylinear manner. This allows, for example, the color rendering index CRIof a warm white light-emitting LED to be increased; see also the othercorresponding LED examples in the present application.

FIG. 17 shows the influence of the degree of doping with Eu on theemission wavelength, shown as lambdadom (in nm). With rising activatorcontent y for the novel phosphor, the luminescence signal moves togreater wavelengths in an approximately linear manner. This allows, forexample, the color rendering index CRI of a warm white light-emittingLED to be increased; see also the other corresponding LED examples inthe present application.

In order to determine the structure of the novel phosphor of theinvention, crystals of the novel phosphor were chosen under a lightmicroscope and prepared for a diffractometry study. The measurement waseffected on a Bruker D8 Venture with rotating anode and CCD detector. Asummary of the results (important goodness factors and the underlyingrefined parameters) can be found in the table in FIG. 21.

The diffraction patterns collected were examined in great detail fortheir quenching conditions. A basic pattern discernible is a structurederived from AlN (wurtzite structure type) which can be described in theP2₁ space group.

The solution and refinement of the data set were effected with theJANA2006 software package (Petricek, V., Dusek, M. & Palatinus, L.(2006). Jana2006. The crystallographic computing system. Institute ofPhysics, Prague, Czech Republic.).

The refinement proceeds very efficiently with the followingrestrictions: since Si and Al are indistinguishable by x-ray methods,all Si and Al positions were refined with the population of Si:Al=1:1 asweighed out and a single thermal displacement factor for Si and Al.

In addition, all nitrogen atoms together and all alkaline earth metalatoms together were each described by one thermal displacement factor.All further parameters (e.g. the atomic position parameters) were freelyrefined.

Results of these single-crystal studies are discussed in detailhereinafter.

FIG. 18 shows the crystallographic relationship between variouslight-emitting nitrides and AlN.

A whole series of known nitrides used as phosphors can be derived fromAlN with wurtzite structure. Because of this fundamental structuralrelationship, the diffractograms (particularly x-ray powderdiffractograms) of these compounds also often appear to be similar atfirst glance. However, differences are found in clearly pronounceddetails. The structures can differ significantly, as shown in FIG. 18 byway of example for the derivation of the unit cells for variouscompounds.

FIGS. 20a to 20c show, for the novel Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆structure (the doping is unimportant for this fundamentalconsideration), why it clearly has to be described in the P2₁ spacegroup and cannot be described in either of the two other space groupslisted above.

According to FIG. 20, the single-crystal diffraction data are examinedin reciprocal space for the novel phosphor Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆.FIG. 20a is a representation of the novel phosphor in reciprocal spaceviewed in the [h0l] direction.

The pseudohexagonal base structure is clearly apparent.

FIG. 20b is a representation of the novel phosphor in reciprocal spaceviewed in the [0kl] direction. The circled reflections are examples ofreflections which cannot exist in the Pna21 space group. The occurrencethereof rules out description in this Pna21 space group because of thequenching conditions of various crystallographic space groups. The novelphosphor thus cannot have the same structure as, for example, MgSiN₂, orMnSiN₂.

Finally, FIG. 20c shows a representation of the novel phosphor inreciprocal space viewed in the [h1l] direction.

The circled reflections are examples of reflections which cannot existin the Cmc21 space group. The clearly apparent occurrence thereof rulesout description in the Cmc21 space group. The novel phosphor thus cannothave the same structure as, for example, (Ca,Sr)AlSiN₃, LiSi₂N₃,NaSi₂N₃.

FIG. 19 shows an overview of some structural data known from theliterature for nitrides of similar composition (Cmc2₁ space group,NaSiO₃ structure type).

The single-crystal diffractometry solution of the novel structureSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆ is shown in detail in FIG. 21. This gives thelattice parameters, the unit cell, the radiation source used for theanalysis, the reflections, the measured section of reciprocal space andfurther data.

FIG. 22 gives the interatomic distances in the novel structureSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆ in detail. In a direct comparison withnitrides of similar composition, for example SrAlSiN₃ (ICSD 419410),CaAlSiN₃ (ICSD 161796) or (Sr,Ca)AlSiN₃ (ICSD 163203) (cf. table in FIG.19 for further examples), it should be noted that there is a somewhatlarger and a somewhat smaller environment around the alkaline earthmetal atoms Sr and Ca. In SrAlSiN₃, CaAlSiN₃ and (Sr,Ca)AlSiN₃, for thealkaline earth metal atoms, there is only a pentacoordinated positionwith a mean Sr-N distance of 267 pm. In the novel structureSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆ of the invention, Sr1 forms a hexacoordinatedenvironment with a mean Sr1-N distance of 272 pm; Sr2/Ca2 forms apentacoordination with a mean Sr2/Ca2−N distance of 264 pm.

FIG. 23 compares the crystallographic data and positional parameters(according to single crystallography) for a novel compoundSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆ with the corresponding data for thepreviously known SrAlSiN₃:Eu (on the right). There is a distinctdifference between the crystal systems and space groups.

FIG. 24a-24c illustrate the structure of the novel phosphor typeSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆. FIG. 24a shows a view of the layers ofSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆. The layers are derived from AlN. Compared toAlN, individual tetrahedra are absent and are replaced by an alkalineearth metal ion. The tetrahedra are distinctly distorted compared toAlN. However, all bond lengths and angles are similar to othernitridosilicates. FIG. 20b shows the phosphor Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆of the invention from the [010] direction. The 3D network of the(Si/Al)N₄ tetrahedra is clearly apparent. Running in the a-c plane arelayers that are linked in the b direction (not shown) to form a network.Intercalated between these, layer by layer in each case, are the pure Srposition (shown as white circles) and the position having a mixed Sr/Capopulation (shown as black circles).

FIG. 24c shows, for comparison, the structure, known from theliterature, of (Sr_(0.846)Ca_(0.211))AlSiN₃ (ICSD 163203) from the [010]direction. Here, all the Sr/Ca positions (black) have mixed populations.There are no pure Sr positions.

This ordering into a position having a mixed Sr/Ca population and aposition fully populated by Sr alone in the novel phosphorSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu of the invention is advantageous, forexample over the structure of SCASN (cf. FIG. 24c ), where only aposition having a mixed population is available for the activator atoms(doping), which leads to broadening of the emission, this of coursebeing based on the interaction between the activator and the surroundinghost lattice, and to stronger quenching properties. TheSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu structure of the invention, by contrast,offers the activator, preferably Eu here, an ordered Sr position,without disorder and without the associated disadvantages. The improvedproperties of luminescence can be explained plausibly by this structure.The Eu, according to this model concept, populates predominantly thepure Sr plane only, and the mixed plane to a lesser degree.

Proceeding from FIG. 24 b, it is also possible to represent a phosphorhaving the lower symmetry according to space groups 1 to 3 of theInternational Tables Cryst. A, i.e. space groups P1, P1, P2, in that,for example, the mixed layer has been split up into planes havingdifferent population (in part) by means of pure Sr alongside a mixedpopulation.

In FIG. 25 and FIG. 26 there is a crystallographic evaluation. FIG. 25shows a Rietveld refinement of the x-ray powder diffractogram ofspecimen TF162bG/12, an embodiment of the novel phosphor of theinvention having the weighed-out compositionSr(Sr_(0.8)Ca_(0.2))Si₂Al₂N₆:Eu. The diffractogram can be very welldescribed with the structure model found by the single-crystal x-raystructure analysis for Sr(Sr_(a)Ca_(1−a))Si₂N₂N₆ (Rprofil 7%, Rbragg6%).

FIG. 26 shows an enlarged section of the Rietveld refinement of thex-ray powder diffractogram of TF162bG/12. The reflection marked with anarrow is an example of a reflection of Sr(Sr_(0.8)Ca_(0.2))Si₂Al₂N₆:Euwhich can occur in the P2₁ space group and other lower-symmetry spacegroups such as the P1 space group. The occurrence of this reflectiondefinitively rules out description of the novel phosphor in thehigher-symmetry Cmc21 and Pna21 space groups of the other AlN-relatednitridosilicatic phosphors.

FIG. 27/28 and FIGS. 29/30 and 31/32 and FIG. 33/34 show, by way ofexample, further Rietveld refinements of the x-ray powder diffractogramof other embodiments, as shown in each diagram, each with acharacteristic section.

FIGS. 35a and 35b show the absorption and emission characteristics of aphosphor of the invention compared to known phosphors.

FIG. 35a shows emission spectra and FIG. 35b reflectance spectra of anembodiment of the novel phosphor Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu witha=0.8 and 0.8% Eu compared to known phosphors composed of theSr_(x)Ca_(1−x)AlSiN₃:Eu system with comparable dominant wavelength ldom(ldom≈600 nm). The wavelength 1 is plotted against the intensity I andthe reflectance R. The emission spectra show an unexpectedly narrowspectral emission of the novel phosphor Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Euwith a=0.8. At the same time, the novel phosphorSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu with a=0.8 features a strong absorption;see FIG. 35 b. The absorption is found to be approximately 1−R.

FIGS. 36a and 36b show the absorption and emission characteristics of afurther phosphor of the invention compared to known phosphors.

FIG. 36a shows emission spectra and FIG. 36b reflectance spectra of anembodiment of the novel phosphor Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu witha=0.8 and 1.2% Eu compared to known phosphors composed of theSr_(x)Ca_(1−x)AlSiN₃:Eu system with comparable dominant wavelength ldom(ldom≈602-603 nm). The wavelength 1 is plotted against the intensity Iand the reflectance R. The emission spectra show an unexpectedly narrowspectral emission of the novel phosphor Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Euwith a=0.8. At the same time, the novel phosphorSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu with a=0.8 features a strong absorption;see FIG. 36 b. The absorption is found to be approximately 1−R.

The novel phosphor described here offers the following advantages inparticular: lower half-height width of emission, associated with higherluminous efficiency at the same dominant wavelength, the possibility ofachieving higher activator concentrations of Eu at >0.8% withsimultaneously high quantum efficiency and conversion efficiency,associated with a smaller phosphor demand in LED applications andsimplified processibility, improved aging stability with respect tomoisture compared to conventional (Sr,Ca)AlSiN₃:Eu having low Srcontent, and improvement of thermal stability.

FIG. 37 shows a semiconductor component which serves as a light source(LED) for white light.

For use in a white LED together with a GaInN chip, for example, aconstruction similar to that described in U.S. Pat. No. 5,998,925 isused. The structure of such a light source for white light is shownexplicitly in FIG. 37. The light source, which is the radiation sourcefor the primary radiation, is a semiconductor component which can emitprimary radiation in the UV and/or blue wavelength range. For example,the radiation source used may be a semiconductor component (chip 1) ofthe InGaN type with a peak emission wavelength of 460 nm having a firstand second electrical connection 2, 3, embedded into an opaque basehousing 8 in the region of a recess 9. One of the connections 3 isconnected to the chip 1 via a bonding wire 14. The recess has a wall 17which serves as reflector for the blue primary radiation from the chip1. The recess 9 is filled with a potting compound 5 comprising, as mainconstituents, a potting compound and phosphor pigments 6 (less than 50%by weight). Further small proportions are accounted for, for example, bymethyl ether and Aerosil inter alia. The phosphor pigments are a mixtureof various phosphor mixtures described here, which also containphosphors of the invention, for example LuAG:Ce pigments and pigments ofthe novel phosphor.

Generally, in the case of an LED chip that emits UV radiation asradiation source, it is possible to use a phosphor mixture composed ofat least three different phosphors (blue-emitting phosphor, for exampleBaMgAl₁₀O₁₇:Eu²⁺ or (Ba,Sr,Ca)₅(PO₄)₃Cl:Eu²⁺, together with agreen/yellow-emitting phosphor, for example one of the garnet phosphorsdescribed here, and an orange/red-emitting phosphor, for example one ofthe invention), and, in the case of a blue light-emitting LED chip asradiation source, to use a phosphor mixture composed of at least twodifferent phosphors (a green/yellow phosphor, for example one of thegarnet phosphors described here, and an orange/red-emitting phosphor,for example one of the invention).

FIG. 38 shows a section from an area light 20 as lighting unit. Itconsists of a common carrier 21, onto which has been bonded a cuboidalouter housing 22. The upper side thereof has been provided with a commoncover 23. The cuboidal housing has recesses in which individualsemiconductor components 24 are accommodated. They are UV light-emittingdiodes and/or light-emitting diodes that emit blue light as primaryradiation with a peak emission of 380 nm. The conversion to white lightis effected by means of conversion layers that are directly within thecasting resin of the individual LEDs, similarly to the manner describedin FIG. 37, or layers 25 applied to all the surfaces accessible to theUV radiation (these are especially ceramic surfaces or plates). Theseinclude the inner surfaces of the side walls of the housing, the coverand the base section. The conversion layers 25 comprise, in the case ofUV light-emitting LEDs, three phosphors which emit in the red-orange,yellow-green and blue spectral regions with utilization of phosphors ofthe invention. When the LEDs as radiation sources emit blue radiation asprimary radiation, as already described above, it is also possible foronly two different phosphors that emit in the green-yellow or orange-redto be present in the phosphor mixtures.

In a number of further embodiments of the present invention,conventional blue light-emitting InGaN LEDs were provided with aconventional silicone potting material with different amounts of variousphosphors of the invention or conventional phosphors as comparativeexamples embedded therein. In this case, phosphors of the invention inparticular are to be used partly together with other phosphors for colorconversion of blue primary light to the red or yellow or yellow-orangewavelength range. These phosphors may also be used, inter alia, for fullconversion of the primary light from the primary radiation source to thered or yellow or yellow-orange wavelength range.

Alternatively, the primary radiation source used, rather than an LEDsuch as an InGaN LED, may also be an organic light-emitting device(OLED) comprising a layer stack of organic semiconductive layersdisposed between an anode and a cathode. In this case, at least one ofthe electrodes has to be transparent to the radiation produced by theOLED, in which case the phosphors of the invention can be disposed inthe beam path of the radiation above the transparent electrode.

Embodiments for full conversion of red: the table in FIG. 40a shows thedominant wavelength of the blue-emitting LED (λ_(dom/(blue LED))), thechemical formulae of the inventive and conventional phosphors used, andthe concentrations thereof in the potting material (percent by weightbased on the overall potting material), the x and y color coordinates ofthe secondary radiation converted in the CIE color space and theresulting luminous flux Φ_(v(potting)) and the radiant powerΦ_(c(potting)) of the potted LEDs, in each case relative to theΦ_(c(no potting)) value for the unpotted LEDs (figures relative to thecomparative example in each case). All further tables likewise includethis parameter and in some cases further parameters, for example mixingratios in the case of mixing of two different phosphors in the pottingmaterial of an LED.

It can be inferred unambiguously from this table in FIG. 40a that, witha very similar color locus in the red-orange region (x and y CIE colorcoordinates), the phosphor of the invention according to inventiveexample 1 compared to the conventional phosphor according to comparativeexample 1 has a higher luminous flux and also a higher radiant power.This can also be inferred from the corresponding emission spectrum ofFIG. 40 b, in which it is clearly apparent that inventive example 1 hasa higher light intensity compared to the LED of comparative example 1.

In the table in FIG. 41 a, again, the luminous flux and the radiantpower of a blue-emitting LED having a conventional CaAlSiN₃ phosphor(comparative example 2, phosphor effected according to EP patentapplication EP 1 696 016 A1) are compared with an LED with oneembodiment of a phosphor of the invention incorporated into the siliconepotting material thereof (inventive example 2). Because of the goodstability of the phosphors of the invention, they can also be used witha higher proportion of activator dopants (in the present case 5%)compared to CaAlSiN₃ phosphors, where a corresponding color locus can beachieved only with very low Eu dopings (in the present case 0.4%). Itcan again be inferred from the table in FIG. 41a that, with comparablecolor loci of the two LEDs in the red color space, the LED having thephosphor of the invention has a higher luminous flux and a higherradiant power. This can likewise be inferred from the emission spectrumof FIG. 41 b, in which the emission spectra of comparative example 2 andof inventive example 2 are compared.

The second phosphors described in EP patent application EP 1 696 016 A1are especially phosphors including the elements M, A, D, E, and X, whereM is one or more elements selected from the group consisting of: Mn, Ce,Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb, A is one or more elementsselected from the group consisting of divalent metal elements other thanM, D is one or more elements selected from the group consisting oftetravalent metal elements, E is one or more elements selected from thegroup consisting of trivalent metal elements, X is one or more elementsselected from the group consisting of: O, N, and F, and where thephosphors have the same crystal structure as CaAlSiN₃.

In addition, second phosphors used may also be phosphors of the generalformula (M_(1−x)Eu)_(x)(Al,Q)(Si,Y)N₃ where M=Ca, Sr, alone or incombination or in combination with other divalent and/or monovalentelements, for example Li, Q=trivalent cation other than Al³⁺, Y=othertetravalent cations other than Si⁴⁺, N³⁻ may be partly replaced by O²⁻,F⁻, Cl⁻, Br⁻, C⁴⁻.

In the table in FIG. 42 a, comparative example 3 and inventive example 3are compared. In inventive example 3 again, a conventional CaAlSiN₃phosphor CaAlSi(N,O)₃:Eu (0.4%) is used as the first phosphor, withadditional incorporation of a further embodiment of a phosphor of theinvention in the potting material as a second phosphor. In the presentcase, the CaAlSiN₃ phosphor is capable of absorbing the short-wavecomponents of the secondary radiation converted by the phosphor of theinvention and converting it to red light with longer wavelengthscompared to the starting light. This approach has the advantage that, incontrast to wavelength-specific filters, the radiation is not justabsorbed but also emitted again because of the conversion in thephosphor, which leads to an increased radiant power of the LED. It canagain be inferred from the table that, with a similar color locus in theCIE color space, both the luminous flux and the radiant power ofinventive example 3 have greatly increased compared to comparativeexample 3. This can likewise be inferred from the emission spectrum ofFIG. 42 b.

Analogously to inventive example 3 in inventive example 4 as well, whichis compared with a comparative example 4 in the table in FIG. 43 a, aconventional CaAlSiN₃ phosphor is used, which absorbs the short-wavecomponents of the light converted by the phosphor of the invention andemits them again as red light of a higher wavelength. This table too,and the corresponding emission spectrum in FIG. 43 b, show that, givensimilar color loci, the LED comprising the phosphor of the invention hasa higher luminous flux and a higher radiant power compared to the LEDcomprising the conventional phosphors.

Two inventive examples 5 and 6 are compared in the table in FIG. 44a toa comparative example 5. In all LEDs, the blue primary radiation isconverted to an orange secondary radiation, with exclusive use ofconventional phosphors in comparative example 5 and of differentembodiments of phosphors of the invention with a cerium-activatedyttrium aluminum garnet phosphor in each of inventive examples 5 and 6.It can likewise be inferred from this table, just as from thecorresponding emission spectrum of FIG. 44 b, that the LEDs having thecombination of phosphors including phosphors of the invention have ahigher luminous flux and a higher radiant power than LEDs comprisingconventional phosphors.

Further lighting devices of the invention are to be describedhereinafter, where different amounts of phosphors of the inventionhaving high europium concentrations are present as dopant in the pottingmaterial of the radiation source that emits the primary radiation, forexample a blue LED. Lighting devices of this kind can also be used, forexample, for full conversion of the primary radiation from the radiationsource to a secondary radiation, for example in a red or yellow oryellow-orange wavelength range. More particularly, it is possible forlighting devices of the invention, in particular embodiments of thepresent invention, to have, as a radiation source that emits primarylight, a blue LED having a dominant wavelength of 300-500 nm, preferably400-500 nm, further preferably 420-470 nm, and a phosphor of theinvention having the general formula Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:D where Mis selected from the group of Ca, Ba, Zn, Mg, preferably Ca, and D ispreferably Eu, and where the europium concentrations may be ≧6 mol %,further preferably ≧8 mol %. The radiation emitted by these radiationsources may have a half-height width FWHM of ≦90 nm, preferably ≦85 nm,and a dominant wavelength of ≧607 nm, preferably ≧609 nm.

The table in FIG. 45a shows various embodiments of lighting devices ofthe invention in which different concentrations of phosphors of theinvention have been incorporated in the potting material of aconventional blue InGaN LED with a standard silicone potting material.In spite of the high europium concentrations, FIG. 45b shows that thehalf-height widths of the radiation emitted increase to a lesser degreewith increasing europium concentrations in the case of phosphors of theinvention having the general formula Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:Eu thanin the case of conventional phosphors of the formulae CaAlSiN₃:Eu andSr₂Si₅N₈:Eu. FIG. 45c likewise shows that, in the case of phosphors ofthe invention having an increasing europium content, surprisingly, thequantum efficiency decreases less significantly compared to conventionalphosphors. FIG. 45d shows the emission spectra of the three inventiveexamples 1 to 3, it being clearly apparent that, apart from a very smallproportion of the primary radiation, the entire radiation emitted by thelighting device is attributable to converted secondary radiation havinga low half-height width FWHM. These properties of phosphors of theinvention allow the provision of lighting devices which emit deep redlight for the purposes of full conversion of the primary radiation.

The phosphors of the invention may be used with a multitude of differentgarnet phosphors as second phosphors. These may especially have thegeneral structural formula:

(Gd,Lu,Tb,Y)₃(Al,Ga,D)₅(O,X)₁₂:RE

with X=halide, N or divalent element, D=tri- or tetravalent element andRE=rare earth metals as activator, especially cerium with an optionalco-dopant, for example lanthanoids, e.g. Pr, Sm, Nd.

The garnets may additionally also have the following general formula:

(Gd,Lu,Tb,Y)₃(Al,Ga)₅(O)₁₂:RE

with RE=rare earth metals as activator, especially cerium with anoptional co-dopant, for example lanthanoids, e.g. Pr, Sm, Nd.

Embodiments of streetlighting applications:

In a further embodiment of the present invention, it is possible toprovide lighting devices of the invention which can especially also beused for general lighting applications, for example streetlighting, witha CRI≧70 and high color temperatures (˜5000 K).

More particularly, these lighting devices may have, as radiation source,a blue LED having a dominant wavelength of 300-500 nm, preferably400-500 nm, further preferably 420-470 nm, with at least one phosphor ofthe invention having the general formula Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:Dwhere M is selected from the group of Ca, Ba, Zn, Mg, with D=Eu, presentin the beam path of the radiation source as first phosphor and at leastone yellow/green-emitting garnet phosphor of the general formula(Y,Lu,Gd)₃(Al,Ga)₅O₁₂:Ce present as second phosphor.

The first phosphor used here may be a phosphor of the invention havingthe general formula Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:D where M is selected fromthe group of Ca, Ba, Zn, Mg, preferably Ca, and D is preferably Eu, witha≧0.8, preferably a≧0.82, further preferably a≧0.85, and a europiumcontent of 0.1-5 mol %, preferably 0.1-3 mol %, further preferably 0.1to 2 mol %. The phosphor of the invention has a peak emission wavelengthof about 600-640 nm, preferably 605-625 nm, and a half-height width FWHMof <85 nm, preferably <80 nm, further preferably <78 nm. Such a phosphorof the invention together with the garnet phosphor as second phosphorcan give a lighting device in which a wide range of correlated colortemperature CCT within the range of at least 6500-4000 K, preferably6500-3000 K, is possible, where the CRI is at least 70.

In this case, the garnet phosphor as second phosphor may especially havethe general formula Lu₃(Al,Ga)₅O₁₂:Ce ^(or) (Y,Lu)₃(Al,Ga)₅O₁₂:Ce, inwhich case the maximum excitability is preferably between 440-455 nm,further preferably between 454-450 nm. The yellow/green-emitting garnetphosphor is selected such that it has a high conversion efficiency andhigh thermal stability. A preferred yellow/green-emitting phosphor is a(Y,Lu)₃(Al,Ga)₅O₁₂:Ce having a cerium content of 0.5-5 mol %, preferably1-3 mol %, and a Y content of 0-50 mol %, preferably 0-30 mol %, so asto result in a phosphor of the general formula(Lu_(1−x)Y_(x))₃(Al,Ga)₅O₁₂:Ce with x=0 to 0.5, preferably x=0 to 0.3.Other variants of the garnet phosphor are also possible, having similarspectral characteristics, especially variants with (Y,Lu)₃(Al,Ga)₅O₁₂:Cewhere at least some of the Al has been exchanged for Ga.

In a further embodiment, a garnet phosphor of the following generalformula Y₃(Al,Ga)₅O₁₂:Ce is used, having a maximum excitability in therange of 440-455 nm, preferably 445-450 nm. The preferredyellow/green-emitting phosphor is selected such that it has a highconversion efficiency and high thermal stability. The preferredyellow/green-emitting phosphor is a phosphor of the general formulaY₃(Al,Ga)₅O₁₂:Ce having a cerium content of 1.5-5 mol %, preferably 2-5mol %, and a gallium content of 0-50 mol %, preferably 0-30 mol %.Within this system, however, other element combinations are alsopossible, which result in similar spectral properties.

Hereinafter the optical properties of two comparative examples 1 and 2where a garnet phosphor has been combined with a conventional 2-5-8phosphor in the standard silicone potting material of a conventionalInGaN LED having the dominant wavelength of 444.5 or 444.6 nm at 350 mAare to be compared with three embodiments of the present invention. Thearea of each of the LED chips is 1 mm².

The compositions of the various phosphors and the respectiveconcentrations of the phosphors in the standard potting material and therelative proportions of the two phosphors are given in FIG. 46 a.

It can be inferred from the table in FIG. 46b that, given similar colorcoordinates, the LEDs of inventive examples 1-4 comprising the phosphorsof the invention, at a driver current of 350 mA, have a higher orsimilar conversion efficiency as the ratio of the luminous flux Φ_(v) ofan LED having potting material filled with the phosphor mixtures and theradiant power Φ_(e) of an LED having a clear potting material withoutphosphors Φ(_(v(filled potting)/)Φ_(e(clear potting))) compared to theLEDs comprising the conventional phosphor mixture, but the CRI ispotting)) higher. The color point correction was conducted by taking atheoretical model of comparative example 2 and extrapolating the LEDefficiency of the comparative example for the color points of the otherinventive examples. The conversion efficiencies were each stated as therelative conversion efficiencies in relation to inventive example 1.

FIG. 46c shows the same measurement data as FIG. 46 b, but at a drivercurrent of 1000 mA. In that figure too, the inventive examples againhave a higher CRI.

In summary, it can be stated that neither of comparative examples 1 and2 attains the necessary CRI of 70 at 3000 K for streetlightingapplications. For this reason, comparative examples 1 and 2 can be usedeither only in lighting devices having a correlated color temperatureCCT between 6500-4000 K and not within a range of 6500-3000 K, or anadditional, third phosphor has to be used to improve the colortemperature, but this complicates the manufacturing process for thelighting devices. Thus, lighting devices of the invention, because ofthe phosphor of the invention, can have a sufficient CRI>70 within abroad color temperature range of 6500-3000 K for streetlightingapplications. In contrast to conventional phosphor mixtures, noadditional, third phosphor is needed for the achievement of a broadcolor temperature range.

FIGS. 46d and 46e show the normalized LED spectra of inventive examples1 and 2 and of the corresponding comparative examples 1 and 2 at adriver current of 350 mA (FIG. 46d ) and the normalized LED spectra ofinventive examples 3 and 4 and of comparative examples 1 and 2 at adriver current of 350 mA (FIG. 46e ).

In further embodiments of the present invention, the efficiency of thelighting devices, for example for streetlighting, at a particular colortemperature CCT and a particular CRI, can be improved by adding afurther, third phosphor to the phosphor mixtures. More particularly, alighting device in this embodiment of the present invention may have aradiation source having a blue light-emitting LED having a dominantwavelength between 440-455 nm, and also a red-emitting phosphor of theinvention having a peak wavelength between 605-620 nm, preferably605-616 nm, and a half-height width FWHM≦80 nm, preferably ≦78 nm, asthe first phosphor, a green/yellow-emitting phosphor having a peakwavelength between 540-565 nm, preferably 546-556 nm, and a half-heightwidth FWHM≧100 nm, preferably ≧105 nm, as the second phosphor, and ayellow/orange-emitting phosphor having a peak wavelength of 580-590 nm,preferably 582-588 nm, and a half-height width FWHM≦80 nm, preferably≦78 nm, as the third phosphor.

The first phosphor used may especially be a red-emitting phosphor of thegeneral formula Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:D where M is selected from thegroup of Ca, Ba, Zn, Mg, preferably Ca, having a peak emission between605-620 nm, preferably 605-616 nm, and a half-height width FWHM below orequal to 80 nm, preferably below or equal to 78 nm. It may especially bethe case here that the value a≧0.8, preferably a≧0.84, and the europiumcontent is between 0.1-5 mol %, preferably 0.1-3 mol %, furtherpreferably between 0.1-2 mol %. These red-emitting phosphors feature ahigh thermal stability and a high conversion efficiency under operatingconditions typical for streetlighting.

More particularly, the green/yellow-emitting phosphor as the secondphosphor may be a garnet phosphor of the general formula(Y,Lu,Gd,Tb)₃(Al,Ga)₅O₁₂:Ce which is matched to the emission wavelengthsof the blue LED and the two other phosphors. More particularly, thephosphor may be a green-emitting garnet phosphor of the general formula(Y,Lu)₃(Al,Ga)₅O₁₂:Ce, especially a yellow/green-emitting phosphor ofthe general formula (Y,Lu)₃(Al,Ga)₅O₁₂:Ce having a cerium content of 1-5mol %, preferably 2-4 mol %, and an yttrium content of 0-50 mol %,preferably 0-30 mol %, further preferably 0-20 mol %, and a galliumcontent of 0-50 mol %, preferably 0-30 mol %, further preferably 0-15mol %, and so the result is a garnet phosphor of the following generalformula: (Lu_(1−x)Y_(x))₃(Al_(1−y)Ga_(y))₅O₁₂:Ce with x=0 to 0.5,preferably x=0 to 0.3, further preferably x=0 to 0.15 and y=0 to 0.5,preferably y=0 to 0.2, further preferably y=0 to 0.15. Other elementcombinations within the general formula (Y,Lu,Gd,Tb)₃(Al,Ga)₅O₁₂:RE withRE=rare earth metal, e.g. Ce, are likewise possible.

The third phosphor used may especially be a phosphor of the generalformula (Ca,Sr,Ba)₂(Si,Al)₅(N,O)₈:Eu which, together with the primarylight source, for example a blue LED, and the green/yellow-emittingphosphor and the red-emitting phosphor of the invention, achieves aCRI≧65, preferably ≧70, over a wide range of correlated colortemperature CCT (at least of 6500-4000 K, further preferably of6500-3000 K). In order to achieve the above-described spectralproperties for the yellow/red- or yellow/orange-emitting phosphor as thethird phosphor, this has a europium content of 0.1-5 mol %, preferablyof 0.1-3 mol %, further preferably of 0.1-2 mol %, and a barium contentof 50-100 mol %, preferably 70-100 mol %, further preferably 80-100 mol%, and a calcium content of 0-20 mol %, preferably 0-10 mol %, where theproportion of strontium is chosen such that the alkaline earth metalsbarium, strontium and calcium together with the europium dopant add upto 100%.

There follows a description of one embodiment of a lighting device ofthe invention having three different first to third phosphors inrelation to a comparative example. Comparative example 1 is a lightingdevice having a blue LED chip (dominant wavelength 445 nm) having a chiparea of 1 mm², in which 14% by weight of a phosphor mixture composed oftwo different phosphors is present in the standard silicone pottingmaterial of the LED, where the ratio of the green to the red phosphor is4.7:1.

The green-emitting phosphor here is a phosphor of the formula(Lu_(0.85)Y_(0.15))₃Al₅O₁₂:Ce (3 mol %), and the red-emitting phosphor aphosphor of the formula (Sr_(0.5)Ba_(0.5))₂Si₅N₈:Eu (1 mol %), the LEDbeing operated at a driver current of 350 mA. In inventive example 1,present in the standard silicone potting material of a blue LED having adominant wavelength of 445 nm at a driver current of 350 mA is 14% byweight of a phosphor mixture comprising the following three first tothird phosphors: Sr(Sr_(0.86)Ca_(0.14))Si₂Al₂N₆:Eu (0.8 mol %) as thefirst phosphor, (Lu_(0.85)Y_(0.15))₃Al₅O₁₂:Ce (3 mol %) as the secondphosphor and (Sr_(0.1)Ba_(0.9))₂Si₅N₈:Eu (1 mol %) as the thirdphosphor, where the ratio of first phosphor:second phosphor:thirdphosphor is 0.67:5.3:0.33. The area of the LED chip is again 1 mm².

FIG. 47a shows, in tabular form, a list of the CIE color coordinates andof the CRI and the conversion efficiency as the ratio of the luminousflux Φ_(v) of an LED having a potting material filled with the phosphormixtures and the radiant power Φ_(e) of an LED having a clear pottingmaterial without phosphors Φ(_(v(filled potting/)Φ_(e(clear potting)))and the luminous efficiency for comparative example 1 and inventiveexample 1 of the present invention at a driver current of 350 mA and adominant wavelength of 444.6 nm. It is apparent that both the luminousefficiency and the conversion efficiency in the inventive example arehigher than in the comparative example.

FIG. 47b shows further results for inventive example 1 and forcomparative example 1 at a driver current of 350 mA at differenttemperatures of 25° C. and 85° C. Here too, it is apparent that theluminous efficiency is higher in inventive example 1 than in comparativeexample 1.

FIG. 47c shows the emission spectra of comparative example 1 and ofinventive example 1 at 25° C. at a color temperature of 4000 K and adriver current of 350 mA. The two examples have roughly comparableemission spectra.

FIG. 47d shows the spectral efficiency (LER, lm/W_(opt)) of inventiveexample 1 compared to comparative example 1 as a function of thedominant wavelength of the LED chip at a color temperature of 4000 Kbased on ray tracing simulations. It is clearly apparent that, in thecase of the phosphor mixture of the invention, composed of threephosphors, the spectral efficiency is greater than in the comparativeexample. The data shown in the FIGS. 47e to 47i that follow are alsobased on ray tracing simulations, with selection of color loci on thePlanckian locus with the CCT specified for the simulations.

FIG. 47e shows that the range for the CRI with the phosphor mixture ofthe invention, comprising three phosphors, can be adjusted over a verywide range between 53 and 76 over a range of the correlated colortemperature CCT of 3000-6500 K (see areas shaded gray). The dominantwavelength of the LED chip is 448 nm and the dashed and dotted lines inthis figure show the CRI for two comparative examples. Inventive example1 comprises a mixture of three different phosphors of the followingcomposition: (Lu_(0.85)Y_(0.15))₃Al₅O₁₂:Ce (3 mol %),(Sr_(0.1)Ba_(0.9))₂Si₅N₈:Eu (1 mol %) andSr(Sr_(0.86)Ca_(0.14))Si₂Al₂N₆:Eu (0.8 mol %), whereas comparativeexample 1 contains the two following phosphors:(Lu_(0.8)Y_(0.2))₃Al₅O₁₂:Ce (4.5 mol %) and(Ca_(0.025)Sr_(0.475)Ba_(0.5))₂Si₅N₈:Eu (2.5 mol %), and comparativeexample 2 comprises the following phosphors:(Lu_(0.85)Y_(0.15))3Al₅O₁₂:Ce (3 mol %) and (Sr_(0.5)Ba_(0.5))₂Si₅N₈:Eu(1 mol %).

FIGS. 47f to 47i show the luminous efficiency LER for this inventiveexample 1 and comparative examples 1 and 2 as a function of theproportion of the red phosphor of the invention for inventive example 1at various CCTs (FIG. 47 f: 3000 K on Planck; FIG. 47 g: 4000 K onPlanck; FIG. 47 h: 5000 K on Planck and FIG. 47 i: 6500 K on Planck).For comparative examples 1 and 2 which contain only two phosphors, theluminous efficiency LER and the proportion of the red phosphor arealready determined by the desired color point/CCT. Therefore, the valueson the x axis relate only to inventive example 1, and the values shownthere give the proportion of the red phosphor in relation to the orangephosphor in the phosphor mixture of the invention containing the threephosphors. The mixture of the red and green phosphors is then mixed withthe green-yellow phosphor, in order to achieve the desired color locus(LER at CRI 70 marked with an arrow for embodiments). It canadditionally be inferred from these figures that, at a CRI of 70, thephosphor mixture of the invention has an LER higher than in the case ofconventional phosphor mixtures. Particularly in the case of highcorrelated color temperatures CCT, the proportion of the red phosphor inthe mixture can be gradually reduced and, correspondingly, theproportion of the orange-emitting phosphor increased, since a highproportion of red-emitting phosphor is required particularly at low CCT.Zero or only small proportions of deep red emission in the LED spectrumgenerally have a positive effect on the LED efficiency.

Embodiments of backlighting applications: a further embodiment of thepresent invention is directed to phosphor mixtures for backlightingapplications. For backlighting applications, a broad color space has tobe achieved with narrow-band red- and green-emitting phosphors, thephosphor mixture determining the optical properties of the LED, such asbrightness, efficiency and robustness.

For the sRGB/Rec709 color space, lighting devices which can be used asbacklighting devices for LCDs, for example, are especially those having,as primary radiation source, a blue LED having a dominant emissionwavelength of 430-470 nm, preferably 440-460 nm, further preferably445-455 nm, and also containing a green/yellow-emitting garnet phosphorof the general formula (Lu,Y,Gd,Tb)₃(Al,Ga)₅O₁₂:Ce and also ared-emitting phosphor, especially an inventive phosphor of the generalformula Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:D where M is selected from the groupof Ca, Ba, Zn, Mg, preferably Ca, and D is preferably Eu. It isoptionally also possible for further converters or phosphors ornon-converting materials such as diffusers to be present in the phosphormixture.

The garnet phosphor may especially have the general composition(Lu,Y)₃(Al,Ga)₅O₁₂:Ce and may also take the form of yttrium aluminumgallium garnet having a gallium content of 20 mol %≦x≦60 mol %, furtherpreferably 30 mol %≦x≦50 mol %, further preferably 30 mol %≦x≦45 mol %,so as to result in the general formula: Y₃(Al_(1−x)Ga_(x))₅O₁₂:Ce with0.2≦x≦0.6, further preferably 0.3≦x≦0.5, further preferably 0.3≦x≦0.45.In addition, the garnet phosphor may also take the form of lutetiumaluminum gallium garnet having the following general formula:Lu₃(Al_(1−x)Ga_(x))₅O₁₂:Ce with 0≦x≦0.6, further preferably 0≦x≦0.4,further preferably 0≦x≦0.25, with a cerium content of 0.5-5 mol %,preferably 0.5-3 mol %, further preferably 0.5-2.5 mol %, based in eachcase on the rare earth metals.

The red-emitting phosphor of the invention may have an activator contentof ≧2 mol %, preferably an activator content of ≧3 mol %, furtherpreferably a content of ≧4 mol %, where the divalent metals, which arepreferably strontium and calcium, have a calcium content of ≦15 mol %,preferably ≦10 mol %, further preferably ≦8 mol %, so as to result inthe following general formula: Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu with a≧0.7,preferably a≧0.8, further preferably a≧0.84.

Both the abovementioned garnet phosphors may be used, the use of theyttrium aluminum gallium garnet rather than the lutetium aluminumgallium garnet bringing the advantage that the yttrium garnet has alower specific density, such that less phosphor is required for thephosphor mixtures and, at the same time, a lower percentage of rareearth metals has to be used for the production of the phosphors, and sothey can be produced less expensively.

For backlighting applications having elevated demands on the color space(for example Adobe RGB, NTSC or DCI-P3), phosphor mixtures having verynarrow-band-emitting green-yellow phosphors are required. Preferably,lighting devices of this kind have, as radiation source, a blue LEDhaving a dominant wavelength between 430-470 nm, preferably 440-460 nm,further preferably 445-455 nm.

The green/yellow-emitting phosphors used may be nitridoorthosilicateswhich have the general composition AE_(2−x)RE_(x)SiO_(4−x)N_(x):Eu withAE=Sr, Ca, Ba, Mg, RE=rare earth metals and/orAE_(2−x)RE_(x)Si_(1−y)O_(4−x−2y)N_(x):Eu, and AE and RE as defined inthe previous example, and which are more particularly described in thepatent application WO 2011/160944. It is likewise possible to useorthosilicates of the general formula AE₂SiO₄:Eu with AE=Ca, Ba, Mg, Sr.Both the nitridoorthosilicates and orthosilicates having theabovementioned empirical formulae preferably include a combination of atleast two alkaline earth metals, further preferably a combination ofstrontium and barium having the ratio of 0.5≦Ba:Sr≦2, further preferably0.75≦Ba:Sr≦1.25. The nitridoorthosilicates may also be described by thegeneral formula AE_(2−x)L_(x)SiO_(4−x)N_(x):RE where AE contains one ormore elements selected from Mg, Ca, Sr, Ba and RE contains one or moreelements selected from rare earth metals, preferably at least Eu, and Lcontains one or more elements selected from rare earth metals other thanRE, with 0<x≦0.1, preferably 0.003≦x≦0.02. A further general compositionis AE_(2−x)L_(x)Si_(1−y)O_(4−x−2y)N_(x):RE where AE contains one or moreelements selected from Mg, Ca, Sr, Ba and RE contains one or moreelements selected from rare earth metals, preferably at least Eu, and Lcontains one or more elements selected from rare earth metals other thanRE, with 0<x≦0.1, preferably 0.003≦x≦0.02, and 0<y≦0.1, preferably0.002≦y≦0.02.

It is also possible to use yellow/green-emitting beta-SiAlONs of thegeneral formula Si_(6−z)Al_(z)O_(z)N_(8−y):Eu with 0<z≦4. Thebeta-SiAlONs may also have the general formulaSi_(6−x)Al_(z)O_(y)N_(8−y):RE_(z) where 0<x≦4, 0<y≦4, 0<z<1 and RE isone or more elements selected from rare earth metals, preferably atleast Eu and/or Yb.

It is also possible to use yellow- to green-emitting nano-semiconductormaterials, called “quantum dots”, containing at least one compoundselected from: a group II-VI compound, a group IV-VI compound or metalnanocrystals.

Inventive red-emitting phosphors may especially phosphors of thefollowing general formula: Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D having anactivator content of ≧4 mol %, preferably ≧8 mol %, further preferably≧10 mol %, further preferably ≧15 mol %, where the divalent metals arepreferably strontium and calcium with a calcium content of ≦15 mol %,preferably ≦10 mol %, further preferably ≦8 mol %, so as to result inthe general formula Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D with a ≧0.7, preferablya ≧0.8, further preferably a ≧0.84.

There follows a discussion of some embodiments of lighting devicesdiscussed here in comparison with conventional lighting devices. Thephosphors of inventive examples 1 and 2 shown in FIGS. 48a to 48d wereused in lighting devices having LEDs and are labeled with embodimentLED1 or embodiment LED2 in the figures which follow. The comparativeexamples were also labeled correspondingly. FIG. 48a shows, in tabularform, spectral data of a comparative example 1, in which a conventionalphosphor of the formula CaAlSiN₃:Eu (0.4% Eu) has been incorporated inthe standard silicone potting material of a blue-emitting LED. Incontrast, in inventive examples 1 to 3, phosphors of the inventionhaving different proportions of europium as activator were incorporatedinto the potting material. In the inventive examples, a smallerhalf-height width FWHM of the radiation emitted relative to comparativeexample 1 was observed, and inventive examples 1 and 2 simultaneouslyshow a higher external quantum efficiency than the comparative example.The further FIGS. 48b and 48c show the emission spectra of thecomparative example and the three inventive examples 1 to 3. Theseemission spectra of the inventive examples show a reduced half-heightwidth with simultaneously deep red emission.

FIG. 48d shows the diffuse reflection of the comparative example and thethree inventive examples as a function of wavelength. All the inventiveexamples comprising the phosphor of the invention exhibit a very lowreflection in the UV to green region of the spectrum, which means a highabsorption. At the same time, the reflection is very high atwavelengths >650 nm, and so a high conversion efficiency can beachieved.

White light-emitting LED lighting devices were constructed with the aidof various combinations of embodiments of the present invention andcomparative examples. A white point having the CIE coordinatesCIE-x=0.285 and CIE-y=0.275 was chosen here. The resulting LED emissionspectra were analyzed and compared, and the coverage of the color spacewas determined by employing a standard set of LCD filter absorptioncurves and determining the resulting filtered color points for the blue,green and red channels. It can be inferred from FIG. 48e that, incontrast to a comparative example 1, an inventive example 1 exhibits anelevated conversion efficiency and an increase in the luminousefficiency LER by 4%, with similar overlap with the sRGB color space inboth lighting devices. FIG. 48f shows the LED spectra of comparativeexample 1 and of inventive example 1 from the previous table in FIG. 48e. FIG. 48g gives a comparison of the coverage of the sRGB color spacefor comparative example 1 and inventive example 1.

FIG. 48h gives, in tabular form, the composition of a comparativeexample 2 and of inventive examples 2 and 3 for backlighting devices foran extremely large color space, for example DCI-P3. A white point withCIE-x=0.275 and CIE-y=0.250 was chosen. The resulting LED emissionspectra were again analyzed and compared analogously to the examplesalready described above in FIG. 48 e, but this time for the DCI-P3 colorspace. The overlap with this color space is comparable or higher in thecase of the inventive examples. FIGS. 48i and 48j show the LED emissionspectra of inventive examples 2 and 3 in comparison to comparativeexample 2 and the coverage of the DCI-P3 color space for these examples.

Second phosphors used may also be other phosphors, for example from thegroup of the SiONs, SiAlONs, silicates and quantum dots.

Embodiments of flash applications: the phosphors of the invention,especially the phosphors of the general structural formulaSr(Sr_(a)Ca_(1−a))Si₂Al₂(N,O)₆, can also be used for flash applicationstogether with the garnets activated by means of an activator, especiallythe above-described cerium-activated garnets. For this purpose, theradiation source used, which emits a primary radiation, is ablue-emitting LED, for example an InGaN LED, having a dominantwavelength of 300-500 nm, preferably 400-500 nm, further preferably420-470 nm. A particularly suitable spectrum for a flash application,for example in mobile phone cameras, has an intensity, based on themaximum of the spectrum in the cyan color range (about 450-500 nm), ofat least 12.5%. The intensity of the spectrum in the wavelength rangeof >650 nm may at the same time be comparatively small, since typicalsensors of cameras have a high sensitivity in this range and thisspectral region is frequently filtered out by special IR filters inorder to avoid disruptive influences of radiation from this radiationrange on the sensor and the image quality.

For flash applications, it is possible here to use lighting deviceshaving only one radiation source wherein the blue-emitting and/or UVradiation-emitting LED chip contains a phosphor mixture comprising atleast one of the phosphors of the invention, for example together with ayellow/green-emitting garnet phosphor, in the beam path thereof. LEDdevices for flash applications may additionally at least also have twodifferent LED modules, in which case one module emits a comparativelycold white light (correlated color temperature CCT between 4000-6000 K)and the further module a comparatively warm white light (correlatedcolor temperature CCT between about 1500-3000 K). By controlled feedingof current to the two LED modules, even better variability of lightingsituations of the environment in the subject of the photo is possible,for example in artificial light or in daylight.

For a cold white color locus, the first phosphor used may be aninventive orange/red-emitting phosphor of the general formula:

Sr(Sr_(a)Ca_(1−a))Si₂Al₂(N,O)₆:Eu

with a≧0.8, preferably a≧0.82. The europium content is between 0.1-20mol %, or between 1-10 mol %, further between 0.1-5 mol %, preferablybetween 0.1-3 mol %, further preferably between 0.1-2 mol %, based onthe alkaline earth metals.

The emission peak of the phosphors of the invention may be between600-640 nm, preferably between 605-625 nm, and the spectral half-heightwidth at half the maximum height (FWHM) should be <85 nm, preferably <80nm, additionally preferably <78 nm. The emission intensity atwavelengths greater than 650 nm should be very low, since typicalsensors of cameras have a high sensitivity in this range.

Second phosphors used for a cold white application may then be theabove-described garnets of the general formula:

(Gd,Lu,Tb,Y)₃(Al,Ga)₅(O)₁₂:RE

with RE=rare earth metals, especially Ce.

The garnets are especially blue/green- to yellow-emitting phosphors ofthe formulae Lu₃(Al,Ga)₅(O)₁₂:Ce and (Lu,Y)₃(Al,Ga)₅(O)₁₂:Ce, which haveparticularly good excitability at a wavelength in the range of 425-455nm, preferably 430-450 nm. Particular preference is given to ablue/green-emitting phosphor having very good stability and conversionefficiency at high temperatures and high radiation intensities which aretypical for flash applications, having the formulaLu₃(Al_(1−x)Ga_(x))₅(O)₁₂:Ce with a cerium content of 0.5-5 mol %,preferably 0.5-2 mol %, based in each case on the rare earth metals, anda gallium content x of 0 to 0.5, preferably 0.15 to 0.3. Other garnetshaving other element combinations are likewise possible, especiallyvariants in which some or all of the lutetium has been replaced byyttrium in the formula of the garnet Lu₃(Al,Ga)₅(O)₁₂:Ce. Thesecombinations of a first and a second phosphor, compared to conventionalcombinations of phosphors where the above-described garnet phosphor hasbeen mixed with another red-emitting phosphor from the class of the2-5-8 phosphors of the general formula (Ca,Sr,Ba)₂(Si,Al)₅(N,O)₈:Eu withoptional co-dopants, for example lanthanoids such as Mn, Nd, Dy, Sm, Tmand alkali metals such as Li, Na, K, have better stability in relationto the color point and higher LED efficiencies at elevated currents.Hereinafter, phosphors of the general formula(Ca,Sr,Ba)₂(Si,Al)₅(N,O)₈:Eu having optional co-dopants are referred toas “2-5-8 phosphors”. In addition, phosphor mixtures of the inventionexhibit reduced intensity of emission at wavelengths >650 nm, but theintensity, based on the maximum of the spectrum in the cyan colorregion, of at least 12.5% is satisfied as an important condition forflash applications.

For warm white flash applications, it is preferable to use ayellow-emitting garnet phosphor (Gd,Lu,Tb,Y)₃(Al,Ga)₅(O)₁₂:RE,preferably of the formula (Gd,Y)₃(Al,Ga)₅(O)₁₂:Ce or(Tb,Y)₃(Al,Ga)₅(O)₁₂:Ce, having maximum excitation in the range of435-470 nm, preferably 440-465 nm. The preferred yellow-emittingphosphor has a very high stability and conversion efficiency at hightemperatures and high radiation intensities (high currents) which aretypical of flash applications. A particularly preferredyellow/green-emitting phosphor is Y₃(Al_(1−x)Ga_(x))₅(O)₁₂:Ce with acerium content of 1.5-5 mol %, preferably 2.5-5 mol %, and a galliumcontent x of 0 to 0.5, preferably x of 0 to 0.1. Other elementcombinations within the (Gd,Lu,Tb,Y)₃(Al,Ga)₅(O)₁₂:Ce system havingsimilar spectral characteristics are likewise possible.

LED lighting devices suitable for flash applications may, independentlyof lighting devices having just one LED, for example, at least also havetwo or three blue-emitting LED chips as primary radiation-emittingradiation sources, with the phosphors and phosphor mixtures alreadymentioned above having been incorporated in the beam path thereof. TheCIE color gamut of the converted light of the LED lighting device ispreferably on the line of a blackbody emitter (Planck) in the range from6500 K to 2700 K with a deviation of 3 steps of a MacAdam ellipse, morepreferably in the range from 5000 K to 3000 K.

In the case of an LED lighting device having two LED chips as radiationsources, in a further embodiment, the radiation from the first LEDchips, after conversion, has a CIE color locus within a range enclosedby the following CIE color coordinates (Cx/Cy): (0.21; 0.247), (0.26;0.24), (0.24; 0.32), (0.28; 0.31). The second LED chip as the secondradiation source, after conversion, has a CIE color locus which isenclosed by the following CIE coordinates: (0.45; 0.41), (0.46; 0.39),(0.58; 0.39), and (0.58; 0.42). In such an LED lighting device, theindividual radiation sources can be operated with different drivercurrents, advantageously with mixing of the converted light emitted inan optical element, such as a common lens, to give an overall emissionradiation.

In the case of an LED lighting device which is suitable for flashapplications and has three LED chips as radiation sources, in a furtherembodiment, the first two LED chips have the CIE color loci alreadydescribed above and the third radiation source, the third LED module,after conversion, has a CIE color locus which is enclosed by thefollowing coordinates: (0.40; 0.44), (0.39; 0.51), (0.45; 0.52), and(0.47; 0.46). In this embodiment too, the converted light emitted ismixed by a downstream optical element in the beam path, such as a lens.

The phosphor particles preferably have a median particle size d₅₀ of5-30 μm, more preferably 7-17 μm. The particle size distribution can bedetermined, for example, via laser diffraction by means of theFraunhofer approximation which is known to those skilled in the art.

Some inventive examples of LED lighting devices suitable for flashapplications are to be elucidated in detail hereinafter. In acomparative example 1, an inventive example 1 and a comparative example2 and an inventive example 2, different phosphor mixtures according tothe prior art and phosphor mixtures comprising phosphors of theinvention are incorporated in each case into a standard silicone pottingmaterial of a blue-emitting InGaN-LED chip as radiation source. Theillumination area of each of the LED chips is 1 mm².

In comparative example 1, 11.5 percent by weight of phosphor based onthe silicone potting material is incorporated, using Lu₃Al₄GaO₁₂:Cehaving a cerium content of 1.5 mol % based on the rare earth metals asgreen-emitting phosphor. The red-emitting phosphor used is aconventional 2-5-8 phosphor SrBaSi₅N₈:Eu having an Eu content of 1.5 mol% based on the alkaline earth metals. The dominant wavelength of the LEDchip at 350 mA is 447 nm and the ratio of the green/red phosphors is5.7:1. As inventive example 1, the same green-emitting phosphor as usedin comparative example 1 is used, and the red phosphor used is aninventive phosphor Sr(Sr_(0.86)Ca_(0.14))Si₂Al₂N₆:Eu having an Eucontent of 0.4 mol %, based on the rare earth metals. The ratio of thegreen/red phosphors is 3.9:1. The dominant wavelength of the LED chip at350 mA is again 447 nm.

The table in FIG. 49a shows the respective x and y CIE color coordinatesof comparative example 1 and of inventive example 1 at differentcurrents (average of 4 LEDs), with comparative example 1 set at thepercentage of 100% for the corresponding currents. It can be inferredfrom this table, but in particular also from FIGS. 49b and 49 c, that,with increasing current, the phosphor mixtures comprising the phosphorsof the invention are more stable than the conventional phosphormixtures, the conventional phosphor mixtures losing some of theirrelative red emission intensity compared to the green-yellow emissionintensity, whereas the phosphor mixtures of the invention remainvirtually stable. It can additionally be inferred from the table thatthe LED comprising the phosphor of the invention has a higher conversionefficiency as the ratio of the luminous flux Φ_(v) of an LED having apotting material filled with the phosphor mixtures and the radiant powerΦ_(e) of an LED having a clear potting material without phosphorsΦ(_((v(filled potting)/)Φ_(e(clear potting))) compared to the LEDcomprising the conventional phosphor mixture. The luminous efficiencyLER is defined as:

${L\; E\; R} = \frac{\int_{380\mspace{11mu} n\; m}^{780\mspace{11mu} n\; m}{\Phi \; {e_{({{filled}\mspace{11mu} {potting}})}(\lambda)}{V(\lambda)}\; {\lambda}}}{\int_{0}^{\infty}{\Phi \; {e_{({{filled}\mspace{11mu} {potting}})}(\lambda)}{\lambda}}}$

LED spectra of comparative example 1 and of inventive example 1 atcurrents of 40 and 1000 mA are shown in FIGS. 49b and 49 c. It isclearly apparent here that the conventional phosphor mixture, withincreasing current, loses emission in the red wavelength range (FIG. 49b), whereas there is only a very slight decrease in the case of thephosphor mixture of the invention (FIG. 49c ).

The effect observed can be attributed to the different red-emittingphosphors in the conventional and inventive phosphor mixtures. In thecase of the 2-5-8 phosphors used in the conventional phosphor mixture, adecrease in the conversion efficiency with increasing current isobserved, which is manifested in a decrease in the red emission inrelation to the yellow/green emission in the LED spectrum inconventional phosphor mixtures with increasing current. In the case ofphosphor mixtures comprising the phosphor of the invention, a distinctlyreduced decrease by comparison in the conversion efficiency of the redphosphor with increasing current is observed. The relative decrease inthe conversion efficiency with increasing current for a phosphor of theinvention, such as for a conventional 2-5-8 phosphor, is shown in FIG.49 d.

FIG. 49e shows a comparison of the LED spectra normalized to the maximumemission intensity for inventive example 1 and for comparativeexample 1. Inventive example 1 shows a reduced emission intensity withina wavelength range of >650 nm and simultaneously has a relative emissionintensity of >12.5% in the cyan region.

FIG. 49f shows the normalized emission intensity of a typical phosphor,by way of example a 2-5-8 phosphor, and of a phosphor of the invention.What is clearly apparent here is the reduced emission intensity of thephosphor of the invention in the wavelength range of >650 nm, which isattributable to the reduced FWHM.

The shift in the color point of the LEDs of comparative example 1 and ofinventive example 1 with increasing current is shown in FIG. 49 g. Thereis a much smaller shift here in the color point of the LED of inventiveexample 1 compared to the LED of comparative example 1 because of thehigher emission intensity of the phosphor of the invention.

In a further comparison of an inventive example 2 compared with aconventional comparative example 2, a phosphor mixture having an ambercolor point is used. Comparative example 2 comprises a cerium-activatedgarnet phosphor (Y_(0.957)Ce_(0.043))₃Al₅O₁₂ together with aconventional 2-5-8 phosphor (Ca_(0.1)Sr_(0.4)Ba_(0.5))₂Si₅N₈:Eu havingan Eu content of 3.25 mol % based on the alkaline earth metals used. Theconcentration of the phosphors is 41% by weight based on the siliconepotting material and the dominant wavelength of the blue LED chip at acurrent of 350 mA is 444.7 nm. The ratio of the yellow/red phosphors is5.9:1 (% by weight ratios). In inventive example 2, the same garnetphosphor as in comparative example 2 is used, but in that case anSr(Sr_(0.86)Ca_(0.14))Si₂Al₂N₆:Eu phosphor of the invention having an Eucontent of 2 mol % based on the rare earth metals is used in ayellow/red ratio of 5:1. The dominant wavelength of the blue-emittingLED chip at a current of 350 mA is 444.5 nm, with use of 39% by weightof phosphor mixture in relation to the silicone potting material.

It can be inferred from the table in FIG. 50a that the LED comprisingthe phosphor of the invention again has a higher conversion efficiencyΦ_(v(filled potting)/)Φ_(e(clear potting)) compared to the LEDcomprising the conventional phosphor mixture at the respective currents.These values are reported in relation to comparative example 2 that hasbeen normalized to 100% for the respective current (average of 4 LEDs).

In the most recent generation of mobile communications devices, it ispossible to use “true-tone flashes” which, as well as a cold whitelight-emitting LED, also have a second LED which emits either warm whitelight or yellow light (“amber”). This second LED is used in situationswhere the ambient light has a lower color temperature than daylight(cold white), in order to produce a flash which approximates as closelyas possible to the color temperature of the ambient light. In order toproduce light of various color temperatures, the cold white light andthe light of the yellow-emitting LED have to be mixed with one anotherin various ratios. This can be achieved, for example, by operating thetwo LEDs with different currents. When the flash has a similar colortemperature to the ambient light, the colors in the image have a morenatural appearance.

Similarly to inventive example 1, the inventive phosphor mixtures ofinventive example 2 are also more stable with increasing current thanthe conventional phosphor mixtures, which lose a considerable proportionof their red emission compared to the yellow emission components,particularly at relatively high currents.

FIGS. 50b and 50c show the LED spectra of comparative example 2 (FIG.50b ) and of inventive example 2 (FIG. 50c ) at currents of 40 and 1000mA. A comparison of the two LED spectra shows that, in the case of theconventional phosphor mixture of comparative example 2, a considerableproportion of the red-emitting spectrum is lost with rising currentscompared to phosphor mixtures of the invention.

FIG. 50d shows the stability of the color point with increasing currentsfor comparative example 2 and inventive example 2. Because of thesmaller decrease in emission in the red region in inventive example 2 inrelation to comparative example 2, the change in the color point of theLED of inventive example 2 is much less marked than in the case of theLED of comparative example 2.

The normalized LED spectra for inventive example 2 and comparativeexample 2 are shown in FIG. 50 d. The phosphor mixture of the invention,compared to the conventional phosphor mixture, shows a significantreduction in emission intensity in the wavelength range of >650 nm. Thisis attributable particularly to the reduced FWHM of the phosphor of theinvention compared to the conventional 2-5-8 phosphor.

In summary, it can be stated that it is therefore possible to achieve anequal light yield with lower operating currents in the case of phosphormixtures of the invention compared to conventional phosphor mixtures.Since the current consumption in mobile applications, for example mobilephones, is a crucial criterion for operating life, a low consumption isvery important. In addition, brighter LEDs are possible with thephosphor mixtures of the invention, which extends the range of colorpoints, especially for “true-tone flashes”. Should a higher light yieldnot be desirable, it is possible to use LED chips with weaker emissionof radiation compared to conventional LED chips, for example foryellow-emitting LEDs (“amber”), which reduces rejects during LED chipproduction and hence also enables the utilization of LED chips that areotherwise too dark.

Embodiments of warm white light with CRI≧80: in a further embodiment ofthe present invention, phosphors of the invention are used forproduction of warm white light, for example for general lightingapplications. Warm white light-emitting lighting devices comprisingphosphors of the invention can especially achieve a “color renderingindex” (CRI) of ≧80, preferably ≧82.

Radiation sources of particularly good usability for lighting devicesfor production of warm white light may be blue-emitting LEDs, forexample InGaN-LEDs, which emit light having a dominant emissionwavelength of 430-470 nm, preferably 440-460 nm, further preferably of445-455 nm, as primary radiation. First phosphors used for conversion ofthe primary radiation may be inventive phosphors of the general formulaSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D where 0.7≦a, preferably 0.8≦a, furtherpreferably 0.84≦a, where a<1 and where the proportion of activator D,preferably europium, based on the molar proportion of the alkaline earthmetals, is ≧1 mol %, preferably ≧2 mol %, further preferably ≧3 mol %.

Second phosphors used may, for example, be a green/yellow-emittinggarnet of the general formula (Gd,Lu,Y,Tb)₃(Al,Ga)₅(O)₁₂:RE with RE=rareearth metal, preferably Ce. The garnet preferably has the generalformula Y₃(Al_(1−x)Ga_(x))₅(O)₁₂:Ce where the proportion of Ga is0.2≦x≦0.6, preferably 0.3≦x≦0.5, further preferably 0.35≦x≦0.45.

One advantage of using a garnet phosphor of the formulaY₃(Al_(1−x)Ga_(x))₅(O)₁₂:Ce rather than a garnet phosphor of the formulaLu₃(Al_(1−x)Ga_(x))₅(O)₁₂:Ce is that the first garnet phosphorY₃(Al_(1−x)Ga_(x))₅(O)₁₂:Ce has a lower density of about 4.5-5 g/cm³,while the second phosphor Lu₃(Al_(1−x)Ga_(x))₅(O)₁₂:Ce has a density ofabout 6.7-7 g/cm³, and therefore a smaller mass of phosphor is consumedfor a given application. In addition, therefore, the cheaper and morewidely available Y₂O₃ can be used rather than Lu₂O₃ as starting materialfor the production of the phosphor, such that the procurement cost forthe garnet phosphor is reduced.

The use of a first phosphor of the invention exhibits higher absorptionscompared to phosphor mixtures containing conventional 2-5-8 phosphors orCaAlSiN₃ phosphors. Surprisingly, the absorption in the case ofphosphors of the invention, given the same activator content, isconsiderably higher than in the case of conventional 2-5-8 phosphors.This enables a drastic reduction in the amount of red-emitting phosphorcompared to conventional solutions and a very high conversionefficiency. At the same time, the excellent optical properties of thered-emitting phosphors of the invention enable a very high light yieldand high conversion efficiency with high CRI.

Some embodiments of lighting devices of the invention for generallighting applications having a high CRI are to be described in detailhereinafter.

FIG. 51a shows a tabular compilation of comparative examples 1 and 2 andof inventive examples 1 and 2. In all examples, a blue-emittingInGaN-LED having a dominant wavelength of 446 nm is used, wherein thestandard silicone potting material incorporates phosphor mixtures inwhich garnet phosphors have been mixed either with conventionalred-emitting phosphors or with red-emitting phosphors of the inventionin the silicone potting material.

In comparative example 1, a cerium-activated yttrium aluminum galliumgarnet (abbreviated to YAGaG in the figures which follow) with aconventional (Sr_(0.7)Ca_(0.3))AlSiN₃ phosphor (abbreviated to SCASN inthe figures which follow) is incorporated as phosphor mixture in aconcentration of 15% by weight relative to the total mass of thesilicone potting material of the blue LED, where the ratio of green tored phosphor is 2.0 (% by weight ratio). The absolute concentration ofgreen phosphor is 10% by weight and that of red phosphor 5% by weight.In addition, the correlated color temperature CCT, the CRI, the R9 valuefor red hues and the relative conversion efficiency relative tocomparative example 2 are reported.

Comparative example 2 contains a mixture of a lutetium aluminum garnet(abbreviated to LuAGaG in the figures which follow) and a conventional2-5-8 phosphor (abbreviated to 258 in the figures which follow). Incontrast, inventive examples 1 and 2 contain either an yttrium aluminumgarnet or a lutetium aluminum garnet together with different phosphorsof the invention (abbreviated to 226 in the figures which follow).

It can be inferred from the tabular listing in FIG. 51a that allcomparative and inventive examples have a correlated color temperatureCCT in the range of 2700 K±15 K with a high CRI≧80 and a high R9 of10±1. Inventive examples 1 and 2 show an elevated conversion efficiencyin relation to comparative examples 1 and 2, but smaller amounts ofred-emitting phosphors are required than in the comparative examples.Particular preference is given to inventive example 1, since leastred-emitting phosphor is used therein and, in addition, an yttriumaluminum gallium garnet is also used, which avoids the above-describedhigh costs of the lutetium aluminum garnet.

FIG. 51b shows an amount in %, based on comparative example 1, ofred-emitting phosphor which has to be expended for the inventive andcomparative examples. It is clearly apparent here that, for inventiveexamples 1 and 2 of the present invention, much less red-emittingphosphor has to be used than for the comparative examples.

The phosphors of the invention exhibit a very low spectral half-heightwidth at half the maximum height FWHM compared to the conventionalred-emitting phosphors, as apparent from FIG. 51 c.

FIG. 51d shows the emission spectra of the green-emitting garnetphosphors of the present comparative and inventive examples. It isapparent here that the yttrium aluminum garnet exhibits an emissionintensity in the blue/green region of the visible spectrum (470-520 nm)which is comparable to or better than with other green-emitting garnetphosphors. For this reason, it is possible with this garnet phosphor, ina particularly inexpensive manner (avoidance of lutetium), to implementwarm white-emitting lighting devices having a high CRI.

The thermal quenching of various green/yellow-emitting garnet phosphorsand a green-emitting orthosilicate phosphor from room temperature to125° C. in relation to the absolute brightness at 25° C. is shown inFIG. 51 e. It can be inferred from this diagram that the preferredphosphor of the (Lu,Y)₃(Al,Ga)₅(O)₁₂:Ce³⁺ type, in contrast toorthosilicate phosphors, exhibits only very low thermal quenching atrelatively high temperatures.

The adverse effects of the thermal quenching of the various red-emittingphosphors used in the comparative and inventive examples on the absolutebrightness are shown in FIG. 51 f. In this figure, the phosphors of theinvention show comparable thermal quenching to the best 2-5-8-phosphors,while another 2-5-8 phosphor Ca₂Si₅N₈:Eu²⁺ (2%) exhibits appreciablequenching.

FIGS. 51g and 51h show the LED spectra of the LEDs of inventive examples1 and 2. In these spectra, the peaks of the unconverted blue primaryradiation from the LED at wavelengths between 410 and 460 nm, and thegreen-red components of the secondary radiation converted are clearlyapparent. The additive color mixing of these primary and secondaryradiation components produces warm white light with a high CRI.

In a further embodiment of the present invention, a lighting device forproduction of a white light having a CRI≧90 is provided, wherein theradiation source emits a primary radiation in the wavelength rangebetween 430 nm and 470 nm, preferably 440 and 460 nm, further preferably445 nm and 455 nm, and the second phosphor present is a garnet of thegeneral formula (Gd,Lu,Y,Tb)₃(Al,Ga)₅(O)₁₂:RE, preferably(Lu,Y)₃(Al,Ga)₅(O)₁₂:RE with RE=rare earth metal, preferably Ce.

In this lighting device for production of a white light having a CRI≧90,in the first phosphor, which may have one of the general formulaealready described above, especially Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:D, themetal M is Sr and Ca, where the parameter a is as follows: 0.7≦a,preferably 0.8≦a, further preferably 0.84≦a, where the proportion of theactivator D is ≧1.5%, preferably ≧3.5%, further preferably ≧4.5% mol %.

Some embodiments of phosphor mixtures of the invention having a highCRI≧90 are to be presented hereinafter.

FIG. 52a shows, in tabular overview, a comparative example 1 andinventive examples 1 to 4, which, as well as a cerium-activatedyellow/green-emitting garnet phosphor, also contain phosphors of theinvention. The primary radiation source used was an InGaN-LED chiphaving the dominant wavelengths specified, with the phosphor mixturesdisposed in the beam path thereof (phosphor mixtures present in thestandard silicone potting material). The measurements were conducted ata correlated color temperature (CCT) of 2700 K±30 K. It is apparent herethat inventive examples 1 to 4 have an elevated conversion efficiencycompared to the conventional comparative example. At the same time, lessred phosphor has to be used in the phosphor mixtures of the invention.

With reference to the preceding FIG. 52 a, FIG. 52b shows a comparisonof the measurement data for comparative example 1 as opposed toinventive example 1 at correlated color temperatures of 2700 K and 4000K. It is again apparent that the conversion efficiency of the inventiveexample is higher than the conversion efficiency of the comparativeexample.

FIG. 52c shows, in the left half, a graph of the reflectivity as afunction of the wavelength for a conventional phosphor (Sr,Ca)AlSiN₃:0.4% Eu, and for the two phosphors of the inventionSr(Sr_(0.84)Ca_(0.16))Si₂Al₂N₆: 4.7% Eu (labeled as Sr(Sr,Ca)Si₂Al₂N₆:Eu(8% Ca, 4.7% Eu) in the diagram) and Sr(Sr_(0.8)Ca_(0.20))Si₂Al₂N₆: 3.7%Eu (labeled as Sr(Sr,Ca)Si₂Al₂N₆:Eu (10% Ca, 3.7% Eu) in the diagram).What is noticeable here is the higher absorption of the phosphors of theinvention in the wavelength range between 300-600 nm because of theelevated content of europium. At the same time, the phosphors of theinvention exhibit an elevated conversion efficiency. The right-handimage in FIG. 52c shows the high consumption of red phosphor incomparative example 1 (left-hand bar) as compared with inventive example1 (right-hand bar) at correlated color temperatures of 4000 and 2700 K,and it becomes particularly clear here that, in the case of phosphormixtures of the invention containing the novel phosphor, significantlyless phosphor has to be used.

A graph comparison of the temperature-dependent changes in the LED colorlocus of two embodiments of the present invention compared tocomparative example 1 from room temperature to 85° C. is shown in FIG.52 d. It is apparent here that the shift in the LED color locus as afunction of temperature is much more marked in comparative example 1than in inventive examples 3 and 4 of the present invention.

FIG. 52e shows a comparison of the emission spectra of two red-emittingphosphors of the invention compared to a conventional phosphor of theformula (Sr,Ca)AlSiN₃: 0.4% Eu. The phosphors of the invention, bycontrast with the conventional phosphor, show lower half-height widthsFWHM, which result in a high color rendering index (CRI) and in anincreased efficiency.

The emission spectra of various green-emitting garnet phosphors at anexcitation wavelength of 460 nm, which are used in phosphor mixtures ofthe invention for warm white light applications, are shown in FIG. 52 f.The emission intensity of these garnet phosphors in the blue/greenregion of the visible spectrum (470-520 nm) is either comparable to oreven better compared to other green-emitting garnet phosphors. Thisallows a good color rendering index (high CRI).

FIGS. 52g and 52h show spectra of blue-emitting LEDs with phosphormixtures according to inventive example 1 having been introduced intopotting material thereof at correlated color temperatures of 2700 K(FIG. 52g ) and at 4000 K (FIG. 52h ). In both spectra, the signals ofthe secondary radiation of the phosphors of the invention in the red andgreen region and also the emission of the unconverted primary radiationof the LED in the blue region are clearly apparent.

Further embodiments of the present invention are directed to phosphormixtures or lighting devices in which at least three phosphors aredisposed in the beam path of the radiation source, for example of a blueLED. In order to adjust either the CRI or the LED efficiency for a givencolor locus, it is possible to use phosphor mixtures having more thantwo phosphors. Especially in the case of use of three phosphors, forexample of a green-emitting phosphor, a yellow-emitting phosphor and ared-emitting phosphor, there are several ways of obtaining an LED havinga particular color point. However, one problem in the prior art is thatmany conventional orange/red-emitting phosphors have a broad-bandemission and a considerable portion of the red light is emitted within arange to which the human eye is relatively insensitive.

What are proposed, therefore, are phosphor mixtures including at leastone phosphor of the invention. Such lighting devices of the inventiontherefore have, as radiation source for the primary radiation, a blueLED having a dominant wavelength of 300-500 nm, preferably 400-500 nm,further preferably 420-470 nm. The phosphor mixture contains at leastone red-emitting phosphor of the invention as the first phosphor havingthe general formula Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:D where M is selected fromthe group of Ca, Ba, Zn, Mg, preferably Ca, a yellow/green-emittinggarnet phosphor of the general formula (Y,Lu,Gd,Tb)₃(Al,Ga)₅O₁₂:Cehaving a peak wavelength of 500-570 nm, preferably of 510-560 nm,further preferably of 520-550 nm, as the second phosphor, and, as thethird phosphor, either an orange/red-emitting inventive phosphor of thegeneral formula Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:D where M is selected from thegroup of Ca, Ba, Zn, Mg, preferably Ca, or an orange/red-emitting 2-5-8phosphor of the general formula M₂(Si,Al)₅(N,O)₈:Eu with M=Ca, Sr, Ba ora yellow-emitting garnet phosphor of the general formula(Y,Lu,Gd,Tb)₃(Al,Ga)₅O₁₂:Ce having a peak emission wavelength of 580-650nm, preferably of 590-640 nm, further preferably of 600-625 nm for thephosphor of the invention or the 2-5-8 phosphor, and of 500 to 600 nm,preferably 525 to 575 nm, further preferably of 535 to 565 nm, for thegarnet phosphor.

The red-emitting phosphor of the invention as the first phosphor ispreferably selected such that it gives, in combination with the blue LEDand the garnet phosphor and the yellow/red phosphor, a CRI of ≧75,preferably ≧80, further preferably ≧85 and more preferably ≧90 for awide range of correlated color temperature CCT of at least 4000 to 2700K, further preferably of 5000 to 2700 K, additionally preferably of 6500to 2400 K. This is best achieved by using a phosphor of the inventionhaving a half-height width FWHM of <85 nm, preferably <82 nm, furtherpreferably <80 nm, having the general formulaSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu with a≧0.8 and a europium content of 0.1to 10 mol %, preferably 2-5 mol %. The preferred phosphors of theinvention have a high thermal stability and a high conversion efficiencyunder typical operating conditions for warm white lighting devices.

The green/yellow-emitting garnet phosphor used as the second phosphormay, for example, have the general formula Lu₃(Al,Ga)₅O₁₂:Ce, and it isselected so as to result in a high conversion efficiency and thermalstability. This can be done, for example, by selecting a garnet phosphorof the general formula Lu₃(Al,Ga)₅O₁₂:Ce having a cerium content of 1-5mol %, preferably 1-3 mol %, and a gallium content of 0-50 mol %,preferably 0-30 mol %, so as to result in the general formulaLu₃(Al_(1−x)Ga_(x))₅O₁₂:Ce with 0≦x≦0.5, preferably 0≦x≦0.3. Otherelement combinations within the general system of the garnet phosphorsare likewise possible, especially variants in which at least some of thelutetium is replaced by yttrium in the general formula.

The third phosphor used may preferably be a phosphor which, incombination with the blue LED and the garnet phosphor, and also thered-emitting phosphor of the invention, gives a CRI of ≧75, preferably≧80, further preferably ≧85 and most preferably ≧90 over a wide CCTrange, for example of 4000-2700 K, further preferably of 5000-2700 K,most preferably of 6500-2400 K. For example, the third phosphor used maybe a nitridosilicate phosphor of the general formula(Ca,Sr,Ba)₂(Si,Al)₅(N,O)₈:Eu, where the peak wavelength is 580-650 nm,preferably 590-640 nm, further preferably 600-625 nm, with a europiumcontent of 0.1 to 10 mol %, preferably of 0.1 to 5 mol %, additionallypreferably of 0.5-3 mol %, and a barium content of 30-100 mol %,preferably of 40-75 mol %, further preferably of 45-55 mol %, and acalcium content of 0-20 mol %, preferably 0-10 mol %, additionallypreferably 0-5 mol %, where the strontium content is selected such thatit adds up to 100 together with the alkaline earth metals and theeuropium.

Alternatively, the third phosphor used may also be an inventive phosphorof the general formula Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu having ahalf-height width FWHM of <85 nm, preferably <80 nm, additionallypreferably <78 nm, where the peak wavelength is 580-650 nm, preferably590-640 nm, further preferably 600-625 nm. In order to achieve thesespectral properties, an inventive phosphor of the general formulaSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu with a≧0.8, preferably a≧0.82, furtherpreferably a≧0.85, with a europium content of 0.1 to 5 mol %, preferably0.1 to 3 mol %, most preferably 0.1 to 2 mol %, is used.

The third phosphor used may additionally be a yellow-emitting garnetphosphor (Lu,Gd,Tb,Y)₃(Al,Ga)₅O₁₂:Ce having a peak emission wavelengthof 500-600 nm, preferably 525-575 nm, further preferably of 535-565 nm.This can especially be accomplished by a garnet phosphor of the generalformula Y₃(Al,Ga)₅O₁₂:Ce having a high conversion efficiency and thermalstability. This can be accomplished, for example, by using a garnetphosphor of the general formula having a cerium content of 1 to 6 mol %,preferably 1 to 4 mol %, and a gallium content of 0-50 mol %, preferably0-25 mol %, so as to result in the general formulaY₃(Al_(1−x)Ga_(x))₅O₁₂:Ce with 0 23 x≦0.5, preferably 0≦x≦0.25, andother element combinations are additionally also possible within thissystem, for example at least partial replacement of yttrium by lutetium.

Particular technical advantages of such lighting devices of theinvention according to inventive examples 1 and 2 compared tocomparative examples 1 and 2 are to be elucidated hereinafter.

FIG. 53a shows the composition and the concentrations of the phosphormixtures and particular ratios of the first to third phosphors inlighting devices having a standard InGaN LED with a chip area of 1 mm².FIG. 53b shows the respective CIE color coordinates and the CRI and thecorresponding conversion efficiencies, these having been expressed inrelation to comparative example 1 which has been set to 100%. It isagain clearly apparent here that inventive examples 1 and 2 have higherLED efficiencies than the conventional comparative examples.

FIG. 53c shows a comparison of the LED spectra of comparative examples 1and 2 and of inventive examples 1 and 2 together with the eyesensitivity curve for daytime vision of the human eye. It is apparenthere that a high proportion of the rise in the LED efficiency isconnected to the rise in the luminous efficiency which arises from theuse of phosphors of the invention. More particularly, the emissionintensity is reduced in a spectral region in which the human eye hasbarely any sensitivity to light by use of the phosphors of theinvention. FIG. 53d shows the relative LED brightness for thecomparative and inventive examples as a function of temperature. Thelighting devices of the invention have a lower loss of brightness athigh temperatures compared to the brightness at 23° C. than thecomparative examples.

Embodiments of LARP applications: in a further embodiment of the presentinvention, the radiation source used which emits the primary light mayalso be a laser, for example a laser diode. In this case, it isadvantageous when the first phosphor of the invention is spaced apartfrom the laser radiation source (LARP; “laser activated remotephosphor”). LARP applications of this kind are known, for example, fromPCT patent applications WO 2012/076296 A2, WO 2011/098164 A1 and WO2013/110495 A2, and the further patent applications DE 10 2012 209 172A1, DE 10 2010 062 465 A1, DE 10 2011 002 961 A1 and DE 10 2012 201 790A1, which are hereby fully incorporated by reference. With lightingdevices of this kind, for example projectors, it is possible to achievesignificantly higher luminances than with conventional radiationsources.

In the embodiments which follow, a blue LED laser diode having aradiation density of 8.9 W/mm² and a peak wavelength of 446 nm is used,the beam of which is directed onto either conventional or inventivephosphor grains present at the base of an Ulbricht sphere having areflective inner surface. The converted light reflected is subsequentlycollected and analyzed. Such a test setup simulates the conditions in anLARP lighting device.

In the table in FIG. 54, in a comparative example 6, a conventionalphosphor is irradiated with the laser light, while, in inventive example7, an embodiment of a phosphor of the invention is irradiated with laserlight. It is clearly apparent that, given similar dominant wavelengthsof 601 nm and 597 nm of the converted light, the luminous efficiency inthe case of the phosphor of the invention is 42% higher than in the caseof the conventional phosphor. The corresponding emission spectrum isshown in FIG. 55, the dotted line corresponding to comparative example 6and the solid line to inventive example 7.

In the table in FIG. 56 and the corresponding emission spectrum in FIG.57 too, a conventional phosphor and the same phosphor of the inventionwere irradiated with laser light in a comparative example 7 and aninventive example 8, as in the table in FIG. 54. In these experimentstoo, again, an elevated luminous efficiency is found with the phosphorof the invention compared to the conventional phosphor (increase by13%).

More particularly, in all flash applications and also in otherconversion applications of the phosphors of the invention, for examplegeneral lighting applications, and provided that the applications arenot full-conversion applications, it is also possible for proportions ofunconverted primary radiation from the radiation source to be present,even if this is not mentioned explicitly. Mixing of this unconvertedprimary radiation with the converted secondary radiation results in anoverall emission of the lighting device. As already described furtherup, for example, it is possible to achieve warm white light-emittinglighting applications with phosphors of the invention by converting theblue primary radiation from InGaN LEDs by means of the phosphors of theinvention to a red component, and by means of green/yellow-emittingphosphors to a green-yellow component, in which case additive colormixing of the blue primary radiation and the two converted secondaryradiations gives warm white light as the overall emission of thelighting device.

Embodiments with different Eu dopant concentrations: FIGS. 58a to 58cshow the dominant wavelengths, the relative intensities ofphotoluminescence, and the relative photoluminescence intensitiesassessed by eye of various embodiments of an inventive phosphor of theformula Sr(Sr_(0.86)Ca_(0.14))Si₂Al₂N₆:Eu as a function of risingactivator concentrations of europium. With rising concentration ofeuropium dopant, the dominant wavelength of the emission of thephosphors of the invention moves to higher wavelengths, from the orangeto the red color range (see FIG. 58a ), with a rise in the relativeintensity of photoluminescence of 0.1 to about 4 mol % and then a dropagain as the activator concentrations of europium increase further (seeFIG. 58b ). Based on the relative intensity of photoluminescence, aconcentration range of 1-10 mol % of Eu, or 2-5 mol %, is preferred.Substantially analogous behavior to the relative intensity of thephotoluminescence is also displayed by the relative luminescentphotoluminescence intensity assessed by eye sensitivity, which likewiseincreases with rising activator concentrations of europium and dropsagain from about 4 mol % to about 20 mol % (see FIG. 58c ). This takesaccount of the sensitivity of the human eye for daytime vision. Based onthe luminescent photoluminescence intensity, activator concentrations of0.4-10 mol % of Eu, or 1-5 mol % of europium, are preferred.

Embodiments with further co-dopants or dopants other than Eu: Furtherembodiments of phosphors of the invention having the general formulaSr_((1−x−h))(Sr_(a)M_(1−a))_((1−y−i))A_((x+y))B_((h+i)/2)E_((h+i)/2)Si_((2−z))G_(z)Al₂N₆:DandSr_((1−x))(Sr_(a)M_(1−a))_((1−y))B_((x+y))Si_(2−(x+y))Al_(2+(x+y))N₆:Dare to be described in detail hereinafter.

FIG. 59a shows the nominal composition of five different embodiments ofa phosphor of the invention, the first phosphor having Cu co-doping andthe second phosphor having Zn co-doping, and with replacement of thealkaline earth metals Sr and Ca by a mixture of La and Li in the thirdand fourth phosphors. In the last phosphor, La and Al replace thealkaline earth metals Sr and Ca, and also Si. The table reports thespectral properties of the various phosphors, especially the color locusin the CIE color space, the average reflectance between 450 and 470 nm(R(450-470)), the luminous efficiency LE (LE=LER/683 [lm/W] whereLER=luminous efficacy), the dominant wavelength λdom and the spectralwidth at half the maximum height FWHM. It is clearly apparent how theco-doping with different metals affects the luminous efficiency and alsoall other spectral properties of these phosphors. FIGS. 59b to 59f whichfollow show the emission spectra of these phosphors of the invention.

FIG. 59g shows a collation of the x-ray diffractograms of theabove-described co-doped phosphors of the invention. An arrow in eachcase marks the characteristic x-ray reflection which is one of thefactors responsible for the assignment of the crystal structure of theseco-doped phosphors of the invention too into the monoclinic P2₁ spacegroup.

FIG. 60a shows, in tabular overview, various embodiments of phosphors ofthe invention in which no carbon is present and, in the two other cases,different amounts of carbon are present for co-doping. The phosphorseach have the same activator concentration of 3 mol % of Eu based on thealkaline earth metals. Analogously to FIG. 59 a, the spectral propertiesof the various phosphors are listed here again too, “centroid WL”referring to the centroid wavelength of the emission spectrum, which isa weighted average of the frequencies present in the emission spectrum.The table shows that co-doping with carbon causes a red shift in theemission spectrum of the phosphors, which can be used, for example, toimprove the color rendering index of lighting devices of the invention.FIG. 60b which follows shows the emission spectra of the variousphosphors in the table in FIG. 60 a. What is clearly apparent here isthe red shift on account of the co-doping with carbon.

The table in FIG. 61a shows various embodiments of phosphors of theinvention with different activators. In the first phosphor in the table,a mixture of Eu, Ce and Li is used, while either manganese Mn or ceriumCe serves as activator in the case of the other phosphors. It is clearlyapparent that the different activators result in different color loci ofthe phosphors in the CIE color space and that the luminous efficiencyalso depends greatly on the nature of the activators. Large differencescan also be observed in the dominant wavelength and in FWHM. FIGS. 61bto 61d which follow show the emission spectra of these phosphors withdifferent activators.

FIGS. 62a to 62e show various properties of phosphors of the inventionhaving only europium as activator compared to phosphors having a mixtureof lithium and europium as activators.

FIG. 62a shows a graph with the breadth at the half maximum FWHM for aconventional phosphor of the formula Sr_(x)Ca_(1−x)AlSiN₃:Eu compared totwo different phosphors of the invention Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Euand Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu,Li for various values of x and a forSr (a=2x−1). It is clearly apparent that the conventional phosphor has agreater half-height width, while both phosphors of the invention havesmaller half-height widths, it being possible to reduce the half-heightwidth further especially by the co-doping with Li.

The thermal quenching of two phosphors of the invention is shown in FIG.62 b, with the integral emission intensity plotted against thetemperature. Co-doping with lithium here reduces thermal quenchingcompared to a phosphor of the invention having only europium as the soleactivator.

FIG. 62c shows the comparison of the emission spectra of two phosphorsof the invention, with one phosphor having been doped only with europiumand the second phosphor with a mixture of europium and lithium. Bothphosphors exhibit a dominant wavelength of about 604.5 nm, but thehalf-height width of the emission of the phosphor of the invention isreduced once again with the Eu,Li activator mixture.

An overview of the most important spectral properties, especially thecolor locus in the CIE color space, the luminous efficiency LER, thedominant wavelength λdom and the half-height width of the emission FWHMis given in tabular form in FIG. 62d for various phosphors of theinvention. As already described above, it becomes clear that thehalf-height width of the emission of a phosphor of the invention thathas been doped with europium and lithium is lower than that of aphosphor of the invention that has been doped with europium only. Inaddition, the elevated quantum efficiency of the phosphor co-doped witheuropium and lithium is also apparent compared to the other phosphor ofthe invention.

The x-ray diffractograms of the phosphors Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu(bottom) and Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:Eu,Li (top) are shown in FIG. 62e. An arrow highlights the characteristic x-ray diffraction reflectionof the novel crystal structure of the Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆phosphor family. Both phosphors of the invention thus have the samemonoclinic crystal structure in the P2₁ space group.

FIGS. 63 to 73 b show various illustrative embodiments of lightingdevices 30 comprising the phosphor of the invention in cross section.The lighting devices may, for example, be white light-emitting,especially warm and/or cold white-emitting lighting devices, orred-emitting or red/orange-emitting lighting devices. These mayespecially be used in the automotive sector, for example as indicatorsor brake lights. Other possible uses are in traffic signals, in RGBapplications or for “color on demand” applications, for general lightingapplications, for example streetlighting or room lighting, and flashapplications. These lighting devices can each be implemented with andwithout a reflector dish, and multi-chip arrangements are also possible,for example for flash applications where two or more primary radiationsources are combined in one lighting device. The primary radiationsources used may, for example, be LEDs, laser diodes or else OLEDs.

FIG. 63 shows a radiation source 35, for example an LED in the form ofan InGaN LED disposed in a reflector dish 65 which can reflect theradiation from the radiation source 35. Disposed above this radiationsource is a first matrix material 50 with a phosphor of the inventionembedded therein as first phosphor 40. This phosphor is capable ofabsorbing the primary radiation emitted by the radiation source 35, forexample blue light in the wavelength range from 300 nm to 570 nm,preferably 300 nm to 500 nm, and emitting secondary radiation in theorange/red wavelength range within a wavelength range from 570 nm to 800nm, preferably 580 nm to 700 nm, further preferably 590 nm to 650 nm.The secondary radiation can also be emitted within a wavelength rangefrom 580 nm to 630 nm, or 590 nm to 620 nm. Phosphors of the inventioncan therefore be used alone for full conversion or partial conversion ofprimary light to red secondary radiation, and it is also possible to usephosphors of the invention in combination with other phosphors, asdescribed above, for production of white light, for example.

The first matrix material may comprise a multitude of materials that aretransparent both to the primary radiation and to the secondary radiationthat has arisen through conversion. More particularly, the first matrixmaterial may be selected from a group of materials consisting of: glass,silicone, epoxy resin, polysilazane, polymethacrylate and polycarbonate,and combinations thereof. The polymethacrylate used may especially bepolymethylmethacrylate (PMMA). In addition, the phosphor may also be inthe form of a ceramic converter element.

FIG. 64 shows a further embodiment of a lighting device in which thefirst phosphor 40 of the invention is disposed directly above theradiation source 35 in a separate layer. This layer may be, for example,a ceramic, a phosphor-in-glass or a silicone converter element with thefirst phosphor embedded therein. This embodiment too assures efficientconversion of the primary radiation to secondary radiation.

The lighting device in FIG. 65 is what is called a “remote phosphor”configuration in which the layer comprising the first matrix material 50containing the first phosphor 40 of the invention is spaced apart fromthe radiation source 35 by an intervening space 60. In the case of suchan arrangement, it is especially also possible to ensure that theconversion of the primary radiation to secondary radiation is notimpaired by the heat emitted by the radiation source.

However, another alternative option is an embodiment according to FIG.66 in which a volume potting material has been produced above theradiation source 35, wherein the first matrix material 35 contains amixture of the first and second phosphor particles 40 and 45.

In addition, it is possible that the first phosphor 40 of the inventionis disposed directly upon the radiation source 35, for example in theform of a silicone, phosphor-in-glass converter element, or ceramicconverter element (see FIG. 67). The first phosphor 40 is again embeddedhere in a first matrix material 50 or is in the form of a ceramicconverter element. The second phosphor 45 is embedded in a pottingmaterial which surrounds the radiation source and comprises a secondmatrix material 55. An arrangement of this kind may be advantageousespecially when the second phosphor absorbs wavelength ranges of thesecondary radiation produced by the first phosphor and emits them againas light having a longer wavelength. The second matrix material here mayagain comprise the same materials and combinations thereof as the firstmatrix material. Conversely, the first phosphor may also be disposed inthe surrounding potting material and the second phosphor directly uponthe radiation source as converter element.

FIGS. 68a and 68b show alternative embodiments in which either the firstor second phosphor is arranged downstream with respect to the respectiveother phosphor in the beam path of the primary radiation from theradiation source 35. Arrangements of this kind, and also the arrangementaccording to FIG. 67, are advantageous when the downstream phosphor isto reabsorb or convert the primary radiation produced by conversion inthe upstream phosphor, or are advantageous when the upstream phosphorwould absorb portions of the radiation from the downstream phosphor inthe beam path of the radiation source in the case of the reversearrangement, but this is undesirable.

FIGS. 69 and 70 depict various embodiments of lighting devicescomprising the first phosphor 40 of the invention, in which the firstmatrix material 50 is disposed above the radiation source 35 either as apotting material or as a platelet. This arrangement is separated from aninterference filter or filter glass 70 by means of an intervening space60. The filter glass, which may take the form of a glass plate, filterglass particles in a potting material or a filtering,radiation-absorbing second phosphor, may serve, for example, to absorbparticular wavelength ranges of the light converted or unconvertedcomponents of the primary radiation, such that lighting devices of thiskind can be used for substantially complete conversion of primaryradiation to secondary radiation. In relation to combinations of a firstphosphor with filter particles which may also include a second phosphor,reference is hereby made completely to German patent application DE 102014 105 588.8 filed on Apr. 17, 2014.

FIGS. 71 and 72 show further embodiments of lighting devices comprisingthe phosphor of the invention, in which the layers containing thephosphors are spaced apart from one another by an intervening space 60.In each of the individual devices in these two Figures, it is alsopossible for the first phosphors 40 and the second phosphors 45 to beinterchanged.

FIG. 73a and FIG. 73b each show, in cross section, a possible embodimentof a lighting device 30 suitable for flash applications. In this case,two radiation sources 35 are arranged as LED chips in a reflector dish65 (FIG. 73a ) or are present in two separate reflector dishes 65 (FIG.73b ). Phosphor particles 40 and 45 are disposed upon both LED chips,the LED chips having different phosphor mixtures/phosphors disposed intheir beam paths. In this way, it is possible, for example, for two LEDsor LED modules to be present within the lighting device, which emitlight of different color temperature and/or color (for example coldwhite and warm white or amber). A lens 75 disposed downstream of thephosphors/phosphor mixtures in the beam path serves to mix the radiationemitted by the two LEDs or LED modules, such that an overall emission ofthe lighting device that results from the mixing of the radiation fromthe two LEDs or LED modules is perceived by an outside observer. Byoperating the two LEDs or LED modules with different driver currents, itis thus possible to individually adjust the overall emission emitted bythe lighting device in terms of the color and/or color temperaturethereof.

There follows a description of embodiments of phosphors of the inventionby an alternative characterization compared to the above disclosure, butone which is consistent with the above disclosure.

A phosphor is specified. Additionally specified are a process forproducing such a phosphor and a use of such a phosphor.

One problem to be addressed is that of specifying a phosphor which hascomparatively narrow-band spectral emission in the red spectral region.

This problem is solved inter alia by a phosphor, by a process and by ause having the features of the independent claims. Preferreddevelopments are the subject of the dependent claims.

In at least one embodiment, the phosphor is set up to emit red light.Red light means that the phosphor emits radiation having a dominantwavelength between 585 nm and 640 nm inclusive, especially between 590nm and 615 nm inclusive.

The dominant wavelength is especially that wavelength which is found tobe the point of intersection of the spectral color line of the CIEstandard chromaticity diagram with a straight line, this straight lineproceeding from the white point in the CIE standard chromaticity diagramand running through the actual color locus of the radiation. In general,the dominant wavelength differs from a wavelength of maximum intensity.More particularly, the dominant wavelength in the red spectral region isat smaller wavelengths than the wavelength of maximum intensity.

In at least one embodiment, the phosphor has the general empiricalformula Sr_(x)Ca_(1−x)AlSiN₃:Eu. It is possible that the phosphorincludes further elements, for instance in the form of impurities, inwhich case these impurities taken together preferably have a maximumproportion by weight in the phosphor of not more than 0.1 permille or 10ppm, parts per million.

In at least one embodiment of the phosphor, x>0.8 or x≧0.82 or x≧0.85 orx≧0.89. Alternatively or additionally, x≦1 or x<1 or x≦0.98 or x≦0.95 orx≦0.92.

In at least one embodiment, the proportion of the Sr lattice sites whichhave been replaced by Eu is at least 0.01% or 0.1% or 0.35% or 0.5%.Alternatively or additionally, this proportion is at most 10% or 5% or3% or 2.2% or 1.8%.

In at least one embodiment, the phosphor, in an x-ray structureanalysis, has a reflection having the Miller indices 1 2 1 when anorthorhombic description is used as the basis of the crystallographiccell. This statement includes descriptions of equivalent symmetry suchas

In at least one embodiment, the phosphor is set up to emit red light andpreferably to be excited by blue light and has the general empiricalformula Sr_(x)Ca_(1−x)AlSiN₃:Eu with 0.8<x≦1. A proportion of the Srlattice sites between 0.1% and 5% inclusive has been replaced byeuropium. In an x-ray structure analysis, the phosphor in orthorhombicdescription has a reflection having the Miller indices 1 2 1.

Phosphors which can be excited in the ultraviolet spectral range up tothe blue/green spectral range and which emit red light are of greatsignificance for the production of white light-emitting diodes.Specifically in the case of light-emitting diodes having low colortemperatures, called warm white light-emitting diodes, and/or in thecase of light-emitting diodes having a high color rendering index,phosphors of this kind are required. Phosphors of this kind are alsorequired in a multitude of other applications, for instance for displaybacklighting, what are called color-on-demand applications or else fororange and red full conversion light-emitting diodes. Use in combinationwith an organic light-emitting diode, OLED for short, is likewisepossible. The phosphor described here is usable for such applications.

In at least one embodiment, the phosphor in a powder diffractogram onirradiation with monochromatic Cu-K_(a1) radiation has a reflection atan angle 2θ between 36.7° and 37.0°, according to the composition of thephosphor. The exact position of this reflection depends on the parameterx in the general empirical formula of the phosphor. An intensity of thisreflection, especially based on a main reflection, is preferably atleast 0.3% or 0.5% and/or at most 10% or 8% or 5% or 4%.

In at least one embodiment, the dominant wavelength of the phosphor isat least 596 nm or 598 nm. Alternatively or additionally, the dominantwavelength is at most 606 nm or 604 nm. The wavelength of maximumintensity is, for example, at least 605 nm or 610 nm and/or at most 630nm or 625 nm.

In at least one embodiment, the phosphor has a spectral half-heightwidth at half the maximum height, FWHM or full-width at half maximum forshort, of at least 70 nm or 75 nm or 78 nm. The maximum of this spectralrange is preferably 90 nm or 87 nm or 84 nm or 82 nm.

In at least one embodiment, the phosphor has an absorption maximum inthe blue spectral region, especially a relative absorption maximum. Theblue spectral region especially refers to wavelengths of at least 400 nmand/or of at most 480 nm. For example, the absorption maximum is at atleast 410 nm or 420 nm and/or at at most 450 nm or 440 nm.

The abovementioned values relating to the spectral properties of thephosphor especially apply at room temperature, i.e. at about 300 K.

Additionally specified is a process for producing such a phosphor.Features of the phosphor are therefore also disclosed for the process,and vice versa.

In at least one embodiment, the process has at least the followingsteps, preferably in the sequence specified: A) providing reactants inthe solid state for Sr, Al, Si and Eu and optionally for Ca, B) mixingthe reactants, C) heating the reactants under a forming gas atmosphereto at least 1500° C. and forming a calcined cake, and D) comminuting thecalcined cake to give the phosphor.

In at least one embodiment of the process, at least step C) or else allsteps are effected at atmospheric pressure. More particularly, theprocess in that case is not effected under high pressure conditions.Preferably, the atmospheric pressure and/or a total pressure is between0.9 bar and 1.5 bar or 0.95 bar and 1.05 bar inclusive.

Reactants and sources used for strontium, aluminum and/or calcium may bethe respective pure metals or else metal alloys with the appropriatemetals. Reactants used may likewise be silicides, nitrides, oxynitrides,halides and/or oxides of these metals. In addition, it is possible touse mixtures of these compounds.

Reactants or sources used for silicon for the production of the phosphormay be a silicon-metal compound, a silicon nitride, an alkaline earthmetal silicide, silicon diimide, or a mixture of these compounds.Preference is given to using silicon nitrides and/or silicon metals.

Reactants or sources used for Eu may be metallic europium, a europiumalloy, a europium oxide, a europium nitride or a europium halide. It islikewise possible to use mixtures of these compounds. Preference isgiven to using europium oxide as reactant for europium.

In at least one embodiment, a melting agent and/or a flux is used forthe improvement of crystallinity and/or to promote crystal growth. Forthis purpose, preferably chlorides, fluorides, halides and/or boroncompounds of the alkaline earth metals used are employed. Combinationsof two or more melting agents or fluxes may also be used. Melting agentsand/or fluxes used are especially at least one of the followingsubstances: LiF, LiCl, NaF, NaCl, SrCl₂, SrF₂, CaCl₂, CaF₂, BaCl₂, BaF₂,NH₄Cl, NH₄F, KF, KCl, MgF₂, MgCl₂, AlF₃, H₃BO₃, B₂O₃, Li₂B₄O₇, NaBO₂,Na₂B₄O₇, LiBF₄.

In at least one embodiment, the starting substances, especially for Sr,Ca, Al and/or Si and also Eu, are weighed out according to the generalempirical formula of the phosphor. It is possible that the alkalineearth metal components are also weighed out with an excess, in order tocompensate for any evaporation losses that occur during the synthesis.

In at least one embodiment, step D) is followed by a step E). In stepE), the phosphor is calcined further, which can also be referred to asheat treatment. The calcination is especially effected at a temperatureof at least 1500° C. and preferably under a nitrogen atmosphere orforming gas atmosphere. Forming gas refers to a mixture of N₂ and H₂.The temperature of at least 1500° C. in steps C) and/or E) is preferablyemployed for at least four hours or six hours. For example, in each ofsteps C) and E), a temperature of 1650° C.±50° C. is employed.

In at least one embodiment, the reactants are mixed in a ball mill or ina tumbling mixer. In the mixing operation, it may be advantageous tochoose the conditions such that a large amount of energy is introducedinto the mixture, which results in grinding of the reactants. Theresultant increase in homogeneity and reactivity of the mixture can havea positive influence on the properties of the resulting phosphor.

By controlled alteration of the bulk density or by modification of theagglomeration of the reactant mixture, it is possible to reduce theformation of secondary phases. In addition, a particle sizedistribution, a particle morphology and/or a yield of the resultingphosphor can be affected. Techniques of particular suitability for thepurpose are sieving and pelletizing operations, including use ofsuitable additives.

In at least one embodiment, a tempering is effected, especially in acrucible made from tungsten, molybdenum or boron nitride. The temperingis preferably effected in a gas-tight oven in a nitrogen atmosphere orin a nitrogen/hydrogen atmosphere. The atmosphere may be flowing orstationary. It is additionally possible for carbon in finely dividedform to be present in the oven space. Also possible are multipletempering steps of the phosphor, in order to improve the crystallinityor particle size distribution. Further advantages may be a lower defectdensity, associated with improved optical properties of the phosphorand/or a higher stability of the phosphor. Between the tempering steps,the phosphor may be treated in a wide variety of different ways, or itis possible to add substances such as melting agents to the phosphor.

For grinding of the phosphor, it is possible, for instance, to use amortar mill, a fluidized bed mill or a ball mill. In the grindingoperation, it is to be ensured that the proportion of splintered grainsproduced is kept to a minimum, since these can worsen the opticalproperties of the phosphor.

The phosphor can additionally be washed. For this purpose, the phosphorcan be washed in water or in aqueous acids such as hydrochloric acid,nitric acid, hydrofluoric acid, sulfuric acid, organic acids or amixture of these. The phosphor may alternatively or additionally bewashed in an alkali such as sodium hydroxide solution, potassiumhydroxide solution, an aqueous ammonia solution or mixtures thereof.Alternatively or additionally, washing in organic solvents such asacetone, propanol and/or phenol is possible. The washing preferablyfollows after the grinding.

In at least one embodiment, for instance, the tempering, furthercalcining, grinding, sieving and/or washing result in removal ofsecondary phases, glass phases or other contamination and hence animprovement in the optical properties of the phosphor. It is alsopossible by this treatment to selectively remove or dissolve smallphosphor particles and to optimize the particle size distribution forthe application. In addition, such a treatment can alter a surface ofthe phosphor particles in a controlled manner, for example the removalof particular constituents from the particle surface. This treatmentcan, also in conjunction with a downstream treatment, lead to improvedstability of the phosphor.

Additionally specified is the use of such a phosphor. Features relatingto use are therefore also disclosed for the process and the phosphor,and vice versa.

In at least one embodiment, the phosphor is used in a light-emittingdiode. The light-emitting diode comprises at least one semiconductorchip that emits in the blue spectral region in operation. The phosphoris arranged downstream of the semiconductor chip along a beam path.

The blue light produced by the semiconductor chip is partly or fullyabsorbed by the phosphor and converted to red light. It is possible thatfurther phosphors are present, especially for generation of green and/oryellow light. In addition, the light-emitting diode preferably emitsmixed radiation including blue light from the semiconductor chip andconverted radiation from the phosphor, and also green and/or yellowlight from the further phosphor.

One embodiment of a phosphor described here can be prepared as follows:reactants used for the synthesis of the phosphor of the generalempirical formula Sr_(x)Ca_(1−x)AlSiN₃:Eu are the binary nitrides of theconstituent elements, i.e. Ca₃N₂, Sr₃N₂, AlN and Si₃N₄. Since these arehighly oxidation-sensitive and hydrolysis-sensitive substances, what iscalled a glovebox is employed, under an N₂ atmosphere with 0₂<1 ppm andH₂O<1 ppm. In addition, doping with Eu²⁺ is accomplished using Eu₂O₃.The reactants are weighted out such that the following atomic ratio ispresent:

Ca:Sr:Al:Si:Eu=(1−x):x:1:1:y, where y corresponds to the degree ofdoping, i.e. the proportion of Sr lattice sites which are substituted byEu. In addition, various fluxes are added; see the table in FIGS. 74a-74 c. A reactant mixture is scaled up to a total starting weight of50-100 g with retention of the atomic ratios described above; see thetable in FIGS. 74a-74c likewise.

The reactant mixture is introduced into a PET mixing vessel togetherwith ZrO₂ balls and mixed on a roller table in a glovebox for 6 h.Subsequently, the balls are removed from the mixture and the powder istransferred into a closed molybdenum crucible. This crucible is placedinto an outer tungsten crucible, a semicircular open tungsten tube, andtransferred into a tube furnace. There is a flow of 3 L/min of forminggas with 92.5% N₂ and 7.5% H₂ through the tubular furnace during the runtime. In the tubular furnace, the mixture is heated at a rate of 250 K/hto 1650° C., kept at this temperature for 4 h and then cooled down at250 K/h to 50° C. The calcined cake formed is taken out after thefurnace has cooled, comminuted with a mortar mill and sieved through asieve having a mesh size of 31 μm. The sieve fraction <31 μm is thephosphor used.

The sieving may optionally be followed by a further calcining, temperingand/or washing operation.

Illustrative starting weights m in g and resulting color loci CIE x, CIEy, also referred to as chromaticity coordinates, of the emissionspectrum of the particular phosphor in the CIE standard chromaticitydiagram on excitation with blue light at 460 nm and on completeabsorption of the blue light are also listed in the table in FIGS. 74a-74 c. For each of the embodiments in the table, 0.8≦x≦1.

FIGS. 75 to 78 show the properties of radiation emitted by the phosphor.

FIG. 75 shows emission spectra and FIG. 76 reflectance spectra ofSr_(x)Ca_(1−x)AlSiN₃:Eu phosphors. The wavelength X is plotted againstthe intensity I and the reflectivity R. The emission spectra show anunexpectedly narrow spectral emission of the phosphor with x=0.9. At thesame time, the phosphor with x=0.9 features a strong absorption; seeFIG. 3. The absorption is found to be approximately 1−R.

FIG. 77 shows a dependence of a spectral half-height width FWHM of theemission on the Sr content, i.e. the parameter x inSr_(x)Ca_(1−x)AlSiN₃:Eu. Up to an Sr content of 80%, i.e. x=0.8, a verysmall change in the half-height width FWHM with rising x is observed.Surprisingly, from an Sr content of >80% onward, an abrupt decrease inthe half-height width FWHM is suddenly observed.

FIG. 78, analogously to FIG. 77, shows the spectral half-height widthFWHM as a function of the parameter x. Also stated are a dominantwavelength ldom of the spectrum emitted by the phosphor and the Eucontent. Surprisingly, a phosphor having 90% Sr, with a comparabledominant wavelength ldom, has a much smaller half-height width FWHMcompared to conventional phosphors having only a relatively low Srcontent. The abrupt decrease in the half-height width FWHM is virtuallyindependent of the Eu content used in the sample.

The phosphor with x≧0.8 thus features a small half-height width FWHM ofthe emission and a very high luminous efficiency LER with simultaneouslyhigh internal quantum efficiency QI and external quantum efficiency QE;see the table in FIG. 79. In addition, a relative brightness B isstated. To calculate the external quantum efficiency QE, the meanreflectance within the range from 450 nm to 470 nm was employed;measurement was effected in pressed powder tablets at an excitationwavelength of 460 nm.

FIG. 80 shows a comparison of conversion efficiencies of various warmwhite light-emitting diodes, LEDs for short. A mixture of two phosphorswas used in each case, with the green light-emitting phosphor Gremaining the same and the red-emitting phosphor R being varied. Statedon the abscissa axis is the type of red-emitting phosphor R. Theordinate axis states the relative efficiency E. The phosphors wereexcited with a blue-emitting semiconductor chip having a dominantwavelength of 446 nm.

All phosphor mixtures were adjusted so as to achieve, in the CIEstandard chromaticity diagram, a color locus close to Planck with acorrelated color temperature CCT of about 2700 K. The color renderingindex CRI of all LEDs measured is 80±1. All red phosphors R used show acomparable dominant wavelength of about 600.5 nm±1 nm.

Further details of the phosphor mixtures as shown in FIG. 80 can also befound in the table in FIG. 81. Additionally stated are the relativeefficiency E, a phosphor concentration c and a ratio V of the greenphosphor G and the red phosphor R.

FIG. 82 shows a comparison of conversion efficiency and color renderingindex for various warm white light-producing LEDs. A mixture of twophosphors was used in each case, with the green phosphor G being keptconstant and the red phosphor R being varied, analogously to the tablein FIG. 81. All phosphor mixtures were adjusted so as to achieve a colorlocus close to Planck with a correlated color temperature CCT of about2700 K. The efficiency E, illustrated by the bar, of a warm whitelight-producing LED comprising the novel phosphor with 90% Sr shows amuch higher efficiency and simultaneously an improved color renderingindex CRI, symbolized as rhombuses, compared to LEDs comprising a redphosphor with only 80% Sr.

Further data relating to the LED measurements from FIG. 82 can be foundin the table in FIG. 83, analogously to the table in FIG. 81. Theefficiency E of a warm white light-producing LED at correlated colortemperature CCT of about 2700 K comprising a novel red phosphor with 90%Sr is distinctly higher here as well and, moreover, an elevated colorrendering index CRI is achievable.

Red phosphors composed of the Sr_(x)Ca_(1−x)AlSiN₃:Eu material systemwere subjected to a hydrolysis test, in order to assess an agingstability of the phosphor with respect to air humidity; see FIG. 84. Forthis purpose, the corresponding phosphor powders were stored at 130° C.and 100% relative air humidity for 40 h. The absorption A of thephosphors in the blue spectral region between 450 nm and 470 nm wasmeasured both before and after this treatment. A measure of thestability of a phosphor with respect to hydrolysis, i.e. thedecomposition of the phosphor in the presence of water, is considered tobe the decrease in the absorption capacity in the blue spectral region.With increasing Sr content, a significant increase in hydrolysissensitivity is at first observed. Surprisingly, however, the novelphosphor with 90% Sr is more hydrolysis-stable than a phosphor with only80% Sr content.

FIG. 85 shows thermal quenching characteristics of two red phosphorscompared to one another. The two phosphors have a comparable emissioncolor with a dominant wavelength of around 600 nm. Surprisingly, thenovel phosphor having high Sr content, in spite of a higher Eu content,has a smaller decrease in emission intensity I with rising temperaturecompared to the reference phosphor.

FIG. 86 illustrates the relative emission intensity I as a function ofthe content of Eu as activator. The Eu content is reported in percent.

With regard to phosphors composed of the CaAlSiN₃:Eu system, theliterature reports that, with rising activator content, especially >0.8%Eu, a conversion efficiency stagnates; see table 1 in EP 2 135 920 A1.

Surprisingly, the novel phosphor with a high Sr content shows differentbehavior. With rising Eu content, the emission intensity I, even in thecase of an Eu content >1%, continues to increase in an approximatelylinear manner. This property offers various technical advantages forapplication, especially lower phosphor demand and the possibility ofachieving color loci with greater CIE x.

FIG. 87 shows a dependence of the dominant wavelength ldom of theemission on the activator content y for the novel phosphorSr_(x)Ca_(1−x)AlSiN₃:Eu with X=0.9. With rising activator content, theluminescence signal moves toward higher wavelengths in an approximatelylinear manner. This allows, for example, the color rendering index CRIof a warm white light-emitting LED to be increased; see also the LEDembodiments according to FIGS. 80 to 82.

FIG. 88 shows an x-ray powder diffractogram of the phosphorSr_(0.8)Ca_(0.2)AlSiN₃:Eu, which has been produced by means of thesynthesis described here. Surprisingly, the phosphor produced from Srnitride, Ca nitride, AlN, Si₃N₄ and Eu₂O₃ under atmospheric pressureconsists of a pure phase by x-ray crystallography. No reflections ofsecondary phases such as AlN or (Sr,Ca)₂Si₅N₈ are observed.

FIG. 89 shows x-ray powder diffractograms of phosphorsCa_(1−x)Sr_(x)AlSiN₃:Eu with various values of x, which have beenprepared by means of the synthesis described here. From a substitutionlevel of x>0.8 upward, the occurrence of an additional reflection R at2θ of 36.7° to 37.0° is observed. This reflection cannot be explained bythe structure model of known (Sr,Ca)AlSiN₃. Nor was it possible toassign the reflection R to any compounds from databases.

In orthorhombic description, this reflection R originates from the 1 2 1lattice plane. The exact position of this reflection depends on thesubstitution level x. If it were a reflection R from any unidentifiedextraneous phase, this shift would not be expected.

In order to describe the structure of the novel phosphor described here,the following steps were conducted in order. A summary of the results,important R values and the fundamental refined parameters can be foundin the table in FIG. 90.

1) A Rietveld refinement was conducted with the known phasesSr_(0.99)Eu_(0.01)AlSiN₃ from ICSD 98-041-9410, AlN from ICSD98-060-8626 and SrF₂ from ICSD 98-004-1402. The crystal structure dataof Sr_(0.99)Eu_(0.01)AlSiN₃ were fitted as Ca_(0.1)Sr_(0.89)Eu_(0.01)AlSiN₃.

2) All reflections were fitted by means of a profile parameter fit, withequal FWHM for all reflections. Any reflections which were assigned toextraneous phases, for instance SrF₂ and AlN, were eliminated from thesearch. The other reflections were used for a lattice parameter search.This lattice parameter search found that almost all reflections can bedescribed with the original cell, but without quenching conditions. Forthis reason, in the next step, a Rietveld refinement was conducted withthe original structure, but transferred to the P1 space group.

3) A trial refinement of the experimental data was conducted on thebasis of the structure model for Sr_(x)Ca_(1−x)AlSiN₃ known from theliterature, except that it had been transferred to the lower-symmetry P1space group; see also the preceding step 2. This refinement likewiseconverged, but does not explain the reflection R observed.

4) In order to explain the additional reflections observed, a newstructure model different than the known CaAlSiN₃ structure was set up.The new structure model of the phosphor described here is distinctlydifferent than the CaAlSiN₃ structure already known. In thecrystallographic sense, this is a superstructure variant. This structurecan be derived formally from that of CaAlSiN₃ by a reduction insymmetry. In the structure model thus derived for the novel phosphor,there is a good explanation and description of the at least onereflection R additionally observed.

This structure model of the novel phosphor differs from the structuremodel from the above-elucidated step 3). In step 3), the known structuremodel of CaAlSiN₃ was merely described in an alternative, lower-symmetryspace group. Only through the actual introduction of a new structuremodel different than CaAlSiN₃ is a good description of theexperimentally observed reflections possible, especially of the newreflection R.

For this purpose, it is necessary in particular to split up the positionhaving a mixed Sr/Ca population, which has a mixed population in theoriginal Cmc2₁ space group and describes four alkaline earth metal atomssimultaneously for reasons of symmetry, into four individual positions.In the model of the conventional phosphor, all four positions have mixedpopulations of Sr and Ca. In the model of the novel phosphor, three ofthe positions are populated only by Sr, and just one of the positionshas mixed population both with Sr and with Ca.

The new reflection R shown is thus a superstructure reflection which canbe described in P1, but not in Cmc2₁, since it infringes the quenchingconditions for this space group.

The refinement of the powder x-ray data observed, based on the knownstructure model in space group Cmc2₁, leads to the goodness factors inthe first column in FIG. 17, corresponding to the above step 1. Analternative description of the same known structure model in thelower-symmetry P1 space group leads to comparable goodness factors,reported in the third column in FIG. 90, corresponding to the above step3. Only with the aid of the description with the novel structure modeldifferent than CaAlSiN₃ are a complete description of all thereflections observed and hence significantly improved goodness factorsachieved, corresponding to the above step 4.

FIG. 91 shows a schematic perspective view of the structure model of thenovel phosphor with x≧0.8. The positions shown in a dark color arepopulated only by Sr. The position shown in white color has a mixedCa/Sr population.

In comparison, the perspective diagram according to FIG. 92 illustratesthe structure of the CaAlSiN₃ phosphor with small x in the Cmc2₁ spacegroup. Shown in a dark color are the four positions having a mixed Ca/Srpopulation.

The novel phosphor described here offers the following particularadvantages: lower half-height width of emission, associated with higherluminous efficiency at the same dominant wavelength, the possibility ofachieving higher activator concentrations of Eu at >0.8% withsimultaneously high quantum efficiency and conversion efficiency,associated with a lower phosphor requirement in LED applications andsimplified processibility, improved aging stability with respect tomoisture compared to conventional (Sr,Ca)AlSiN₃:Eu having a low Srcontent, and improvement in the thermal stability.

The invention described here is not restricted by the description withreference to the embodiments. Instead, the invention encompasses everynew feature and every combination of features, which especially includesevery combination of features in the claims, even if this feature orthis combination itself is not explicitly specified in the claims orembodiments.

What is claimed is:
 1. A lighting device comprising: a primary radiationsource configured to emit primary radiation in the wavelength rangebetween 300 nm and 570 nm; and a first phosphor disposed in a beam pathof the primary radiation source, the first phosphor configured toconvert at least a portion of the primary radiation to a secondaryradiation within an orange to red wavelength range from 570 nm to 800nm, wherein the first phosphor includes an inorganic substance whichincludes, in its composition, at least an element D, an element Al, anelement AX, an element SX and an element NX, wherein the element D isone or more elements selected from the group consisting of Mn, Ce, Pr,Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, alkali metals and Yb, wherein theelement Al is one or more elements selected from divalent metals notincluded in D, wherein the element SX is one or more elements selectedfrom tetravalent metals, wherein the element AX is one or more elementsselected from trivalent metals, wherein the element NX is one or moreelements selected from the group consisting of O, N, S, C, Cl and F, andwherein the inorganic substance has the same crystal structure asSr(Sr_(a)Ca_(1−a))Si₂Al₂N₆ and crystallizes in space groups P1, P2, P1or P2₁.
 2. The lighting device according to claim 1, wherein the firstphosphor has the formula:Al(Al_(a)M_(1−a))SX₂AX₂NX₆:D, wherein M is divalent metallic elementdifferent from those of element Al, and wherein a parameter a is between0.6 and 1.0.
 3. A lighting device comprising: a primary radiation sourceconfigured to emit primary radiation in the wavelength range between 300nm and 570 nm; and a first phosphor disposed in a beam path of theprimary radiation source, the first phosphor configured to convert atleast a portion of the primary radiation to a secondary radiation withinan orange to red wavelength range from 570 nm to 800 nm, wherein thefirst phosphor has the formula:Sr(Sr_(a)M_(1−a))Si₂Al₂(N,X)₆:D,A,B,E,G,L wherein element M is selectedfrom Ca, Ba, Mg alone or in combination, wherein element D is one ormore elements selected from the group consisting of Mn, Ce, Pr, Nd, Sm,Eu, Tb, Dy, Ho, Er, Tm, alkali metals, and Yb, wherein element A isselected from divalent metals different than those of the elements M andD, wherein element B is selected from trivalent metals, wherein elementE is selected from monovalent metals, wherein element G is selected fromtetravalent elements, wherein element L is selected from trivalentelements, wherein element X is selected from O or halogen, wherein aparameter a is between 0.6 and 1.0, and wherein the first phosphorcrystallizes in space groups P1, P2, P ¹ or P2₁.
 4. A lighting devicecomprising: a primary radiation source configured to emit primaryradiation in the wavelength range between 300 nm and 570 nm; and a firstphosphor disposed in a beam path of the primary radiation source, thefirst phosphor configured to convert at least a portion of the primaryradiation to a secondary radiation within an orange to red wavelengthrange from 570 nm to 800 nm, wherein the first phosphor has the formula:Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:D, wherein element M is selected from Ca, Ba,Zn, Mg and/or Li, wherein element D is selected from the groupconsisting of Mn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm and Yb, whereina parameter a is between 0.6 and 1.0, and wherein the first phosphorcrystallizes in space groups P1, P2, P ¹ or P2₁.
 5. The lighting deviceaccording to claim 1, further comprising a second phosphor which isdisposed in the beam path of the primary radiation source and has adifferent emission than the first phosphor.
 6. The lighting deviceaccording to claim 1, further comprising a second phosphor disposed in abeam path of the secondary radiation and wherein the second phosphor isconfigured to absorb and convert at least a portion of the secondaryradiation.
 7. The lighting device according to claim 5, wherein thesecond phosphor includes the elements M, A, D, E, and X, wherein theelement M is one or more elements selected from the group consisting ofMn, Ce, Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, and Yb, wherein the elementA is one or more elements selected from divalent metal elements otherthan those of element M, wherein the element D is one or more elementsselected from tetravalent metal elements, wherein the element E is oneor more elements selected from trivalent metal elements, wherein theelement X is one or more elements selected from the group consisting ofO, N, and F, and wherein the second phosphor has the same crystalstructure as CaAlSiN₃.
 8. The lighting device according to claim 5,wherein the second phosphor has the formula:(Gd,Lu,Tb,Y)₃(Al,Ga,D)₅(O,X)₁₂:REor(Gd,Lu,Tb,Y)₃(Al,Ga)₅(O)₁₂:RE, wherein element X is selected from ahalide, N or a divalent element, wherein element D is selected from atrivalent element or a tetravalent element, and wherein RE is selectedfrom rare earth metals as activators.
 9. The lighting device accordingto claim 5, wherein the second phosphor has the formula:(Gd,Lu,Tb,Y)₃(Al,Ga,D)₅(O,X)₁₂:RE wherein element X is selected from ahalide or a divalent element, wherein element D is selected from atrivalent element or a tetravalent element, wherein RE is selected fromrare earth metals as activators, wherein the second phosphor is disposedin the beam path of the primary radiation source, and wherein thelighting device is configured to provide a flash.
 10. The lightingdevice according to claim 9, wherein the second phosphor has theformula:Lu₃(Al_(1−x)Ga_(x))₅O₁₂:Ce or (Lu,Y)₃(Al_(1−x)Ga_(x))₅(O)₁₂:Ce, whereina cerium content is of 0.5-5 mol % based on the rare earth metals, andwherein a gallium content x is between 0 and 0.5.
 11. The lightingdevice according to claim 5, wherein the second phosphor has theformula:(Gd,Y)₃(Al_(1−x)Ga_(x))₅O₁₂:Ce or (Tb,Y)₃(Al_(1−x)Ga_(x))₅(O)₁₂:Ce,wherein a a cerium content is of 1.5-5 mol %, wherein a gallium contentx is of 0 to 0.5, and wherein the lightning device comprises a flash.12. The lighting device according to claim 8, further comprising asecondary radiation source with phosphors disposed in the beam paththereof that convert the primary radiation thereof to a secondaryradiation, wherein mixing of the secondary radiation of the first andsecond radiation sources results in an overall emission of radiationfrom the lighting device, and wherein the lighting device comprises aflash.
 13. The lighting device according to claim 12, wherein a colorrange of the converted radiation from the second radiation source isdifferent than a color range of the converted radiation from the firstradiation source.
 14. The lighting device according to claim 13, whereinthe first and second radiation sources can be operated with differentcurrents and a color range of the overall emission radiation from thelighting device can be established via different currents for the firstand second radiation sources.
 15. The lighting device according to claim13, wherein an optical element arranged downstream of the phosphors ofthe first and second radiation sources mixes the secondary radiationfrom the first and second radiation sources to produce the overallemission of radiation.
 16. The lighting device according to claim 5,wherein the first phosphor has the formula:Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D, wherein the parameter a is 0.7≦a, whereinthe second phosphor is a garnet of the formula:((Gd,Lu,Y;Tb)₃(Al,Ga)₅(O)₁₂:RE, wherein RE is selected from a rare earthmetal, and wherein the lighting device is configured to produce a whitelight having a CRI≧80.
 17. The lighting device according to claim 16,wherein the second phosphor has the formula:Y₃(Al_(1−x)Ga_(x))₅(O)₁₂:Ce, and wherein a proportion of Ga is0.2≦x≦0.6.
 18. The lighting device according to claim 5, wherein theprimary radiation source emits the primary radiation in the wavelengthrange between 430 nm and 470 nm, wherein the second phosphor is a garnetof the formula:(Gd,Lu,Y,Tb)₃(Al,Ga)₅(O)₁₂:REor(Lu,Y)₃(Al,Ga)₅(O)₁₂:RE, wherein RE is selected from a rare earth metal,and wherein the lighting device is configured to produce a white lighthaving a CRI≧90.
 19. The lighting device according to claim 18, whereinthe element M in the first phosphor is Sr and Ca and the parameter a isas follows: 0.7≦a, and wherein a proportion of an activator D is ≧1.5%.20. The lighting device according to claim 5, wherein the secondphosphor is selected from at least one phosphor from the followingphosphors: a beta-SiAlON of the formula: Si_(6−z)Al_(z)O_(z)N_(8−z):Euwith 0<z≦4, nano-semiconductor materials as quantum dots,nitridoorthosilicates of a general compositionAE_(2−x)RE_(x)SiO_(4−x)N_(x):Eu, wherein AE is selected from the groupconsisting of Sr, Ca, Ba and Mg, wherein RE is selected from rare earthmetals, or of the general compositionAE_(2−x)RE_(x)Si_(1−y)O_(4−x−2y)N_(x):Eu.
 21. The lighting deviceaccording to claim 5, wherein the first phosphor has the formula:Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D, wherein a is 0.7≦a, wherein a proportionof the activator D is >=2 mol %, wherein the second phosphor has theformula:Y₃(Al_(1−x)Ga_(x))₅O₁₂:Ce with 0.2<=x<=0.6 or Lu₃(Al_(1−x)Ga_(x))O₁₂:Cewith 0<=x<=0.6 wherein a cerium content is of 0.5-5 mol % based on therare earth metals, and wherein the lighting device is configured toprovide backlighting.
 22. The lighting device according to claim 5,wherein the first phosphor has the formula:Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D, wherein a is 0.7≦a, wherein a proportionof the activator D is >=4 mol %, wherein the second phosphor includes abeta-SiAlON Si_(6−x)Al_(z)O_(y)N_(8−y):RE_(z), wherein 0<x<=4, 0<y<=4,0<z<1, wherein RE contains one or more elements from rare earth metals,and wherein the lighting device is configured to provide backlighting.23. The lighting device according to claim 5, wherein the first phosphorhas the formula:Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D, wherein a is 0.7≦a, wherein a proportionof the activator D is ≧4 mol %, wherein the second phosphor has theformula:AE_(2−x)L_(x)SiO_(4−x)N_(x):RE and/orAE_(2−x)L_(x)Si_(1−y)O_(4−x−2y)N_(x):RE and/or AE₂SiO₄:RE, wherein AEcontains one or more elements selected from the group consisting of Mg,Ca, Sr and Ba, wherein RE contains one or more elements selected fromrare earth metals, wherein L contains one or more elements selected fromrare earth metals other than RE, with 0<x≦0.1, and wherein the lightingdevice is configured to provide backlighting.
 24. The lighting deviceaccording to claim 23, wherein the second phosphor, as AE, contains atleast Sr and Ba, and the ratio of Sr and Ba is as follows: 0.5≦Ba:Sr≦2.25. The lighting device according to claim 5, wherein the first phosphorhas the formula:Sr(Sr_(a)Ca_(1−a))Si₂Al₂N₆:D, wherein a is 0.7≦a, wherein a proportionof the activator D is ≧4 mol %, wherein the second phosphor containsquantum dots in the form of nanocrystalline materials including a groupII-VI compound and/or a group III-V compound and/or a group IV-VIcompound and/or metal nanocrystals, which, on excitation with primaryradiation, emit secondary radiation in the green to yellow spectralregion with a peak wavelength of 500-560 nm, and wherein the lightingdevice is configured to provide backlighting.
 26. The lighting deviceaccording to claim 1, wherein the primary radiation source comprises anLED, an OLED or a laser.
 27. The lighting device according to claim 5,further comprising a third phosphor, wherein the first phosphor has theformula:Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:D, wherein M is selected from the groupconsisting of Ca, Ba, Zn and Mg, wherein the second phosphor is ayellow/green-emitting garnet phosphor of the formula:(Y,Lu,Gd,Tb)₃(Al,Ga)₅O₁₂:Ce having a peak wavelength of 500-570 nm, andwherein the third phosphor is an orange/red-emitting phosphor of theformula: Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:D wherein M is selected from thegroup consisting of Ca, Ba, Zn and Mg, or wherein the third phosphor isan orange/red-emitting phosphor of the formula:M₂(Si,Al)₅(N,O)₈:Eu, with M selected from the group consisting of Ca, Srand Ba.
 28. The lighting device according to claim 5, further comprisinga third phosphor, wherein the first phosphor has the formula:Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:D, wherein M is selected from the groupconsisting of Ca, Ba, Zn and Mg, wherein the second phosphor is ayellow/green-emitting garnet phosphor of the formula:(Y,Lu,Gd,Tb)₃(Al,Ga)₅O₁₂:Ce having a peak wavelength of 500-570 nm, andwherein the third phosphor is a yellow-emitting garnet phosphor of theformula: (Y,Lu,Gd,Tb)₃(Al,Ga)₅O₁₂:Ce having a peak emission wavelengthof 500 to 600 nm.
 29. The lighting device according to claim 5, furthercomprising a third phosphor, wherein the first phosphor has the formula:Sr(Sr_(a)M_(1−a))Si₂Al₂N₆:D, wherein M is selected from the groupconsisting of Ca, Ba, Zn and Mg, wherein D is selected from Eu and thefirst phosphor has a peak wavelength between 605-620 nm and ahalf-height width FWHM≦80 nm, wherein the second phosphor is ayellow/green-emitting garnet phosphor of the formula:(Y,Lu,Gd)₃(Al,Ga)₅O₁₂:Ce having a peak wavelength between 540-565 nm anda half-height width FWHM≧100 nm, and wherein the third phosphor ayellow/orange-emitting phosphor having a peak wavelength of 580-590 nmand a half-height width FWHM≦80 nm.
 30. A light-emitting diodecomprising: at least one semiconductor chip configured to emit bluelight; a phosphor arranged downstream of the semiconductor chip along abeam path wherein the phosphor is capable for emission of red light andhas the general empirical formula: SrxCa1−xAlSiN3:Eu wherein x is0.8<x≦1, wherein between 0.1% and 5% inclusive of the Sr, Ca and/orSr/Ca lattice sites have been replaced by Eu, and wherein, if an x-raystructure analysis were to be performed, the phosphor in orthorhombicdescription exhibits a reflection (R) having the Miller indices 1 2 1.